RM2P60S2 RECTRON | Alldatasheet
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Description
DS(ON) , This device is suitable for use as a load switch or in PWM applications. General Features ƽ V DS = -60V,I D = -1.9A R DS(ON) < 260 GS =-4.5V R DS(ON) <215 GS =-10V ƽ High power and current handing capability ƽ L ead free product is acquired ƽ Surface mount package Application ƽ PWM applications ƽ L oad switch ƽ Power management D G S Schematic diagram Marking and pin Assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3000 units Absolute Maximum Ratings (T A =25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -1.9 A Drain Current-Pulsed (Note 1) I DM -7.6 Maximum Power Dissipation P D 0.9 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ć Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA /Wć P-Channel Enhancement Mode Power MOSFET Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM2P60S2V RM2P60S2 uses advanced trench technology to provide mΩ @ V mΩ @ V SOT23 Ø180mm 8 mm RM2P60S2 I D -1.5 A T A =25ć T A =70ć A T A =25ć T A =70ć P D 1.4 W 2022-08/81 REV:A 2309
Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250A V GS =-10V, I D Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D Dynamic Characteristics (Note4) Input Capacitance C lss Output Capacitance C oss Reverse Transfer Capacitance C rss V DS =-30V,V GS =0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f V DS =-30V,R L =30 V GS =-10V,R GEN =3.3 Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd V DS =-48V,I D =-1A,V GS =-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1.2A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production Electrical Characteristics (T A =25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V - - -1 μA -60 V - - -1 -3 - V =-1.8A - 170 215 =-1.4A - 260 200 pF pF pF 358 /g525 ns ns ns ns 33.1 5.2 3.8 /g525 I D =-1A nC nC nC 6.3 2.3 1.8 - - -1.2 V
RATING AND CHARACTERISTICS CURVES (RM2P60S2)
RATING AND CHARACTERISTICS CURVES (RM2P60S2)
- All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 /g537 0° 8°
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