RM2A3P60S4 RECTRON | Alldatasheet
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Technical content
P-Channel Enhancement Mode Power MOSFET
Description
The RM2A3P60S4 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features V DS = -60V,I D = -2.3A R DS(ON) < 180mΩ @ V GS =-10V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply D G S Schematic diagram SOT-223 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2A3P60 RM2A3P60S4 SOT-223-3L Ø330mm 12mm 2500 units Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -2.3 Drain Current-Pulsed (Note 1) I DM -12 Maximum Power Dissipation P D 1.5 Operating Junction and Storage Temperature Range T J STG -55 To 150 Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 85 /W Electrical Characteristics (T A =25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA Zero Gate Voltage Drain Current I DSS V DS =-48V,V GS =0V - - 1 μA 6N100 xxxx 2021-11/83 REV:A Halogen-free R DS(ON) < 260mΩ @ V GS =-5V P/N suffix V means AEC-Q101 qualified, e.g:RM2A3P60S4V A A W - - V RM2A3P60S4 -60
Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250 -1.5 Drain-Source On-State Resistance R DS(ON) V GS=-10V, ID=-2A Forward Transconductance g FS V DS=-5V,ID =-2A Dynamic Characteristics (Note4) Input Capacitance C lss Output Capacitance C oss Reverse Transfer Capacitance C rss VDS=-15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f VDD=-30V,ID=-2A, VGS=-10V,RG=3.3 Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd VDS=-48V,ID=-2A, VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=-1A Diode Forward Current (Note 2) I S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to product V V GS=-4.5V, ID=-1.5A - - 5.3 - S m PF nS nC nC A -2.0 -2.5 140 180 m200 260 - 428 600 PF - 39 55 PF - 26 36.4 nS nS nS nC - 4.1 8.2 - 21 38 - 20.3 40.6 - 21 42 - 8.3 11.6 - 1.8 2.52 - 1.6 2.25 V A- - -2.3 - - -1.2
468 1 0 -VGS (V) RDSON (mΩ) ID=-2A Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized R DSON vs. TJ RATING AND CHARACTERISTICS CURVES (RM2A3P60S4)
0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 1000 -VDS (V) -ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA) PDM D = TON/T TJpeak = TA + PDM x RθJA TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching time waveform F ig.11 Gate Charge waveform RATING AND CHARACTERISTICS CURVES (RM2A3P60S4)
- All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE