RM27P30LD RECTRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
P-Channel Enhancement Mode Power MOSFET
Description
The RM27P30LD uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features V DS =-30V,I D =-27A R DS(ON) <30mΩ @ V GS =-10V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits DC-DC Converter 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 27P30 RM27P30LD TO-252-2L - - - Absolute Maximum Ratings (T C =25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -27 A Drain Current-Continuous(T C =100 D (100 ) -17 A Pulsed Drain Current I DM -54 A Maximum Power Dissipation(T P D 31.3 W Operating Junction and Storage Temperature Range T J STG -55 To 175 Thermal Characteristic Thermal Resistance ,Junction-to-Case (Note 2) R θJC 4 /W G S D 2019-03/83 REV:A Halogen-free R DS(ON) <55mΩ @ V GS =-4.5V C =25 ) RM27P30LD
Electrical Characteristics (T C =25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D Drain-Source On-State Resistance R DS(ON) V GS =-10V, I D Forward Transconductance g FS V DS =-5V,I D =-12A Dynamic Characteristics (Note4) Input Capacitance C lss PF Output Capacitance C oss - 148 - PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz - 115 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) nS Turn-on Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f V DD =-24V, ,I =-1A D V GS =-10V,R GEN Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd V DS =-20V,I D =-12A, V GS =-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1A - - 1.2 V Diode Forward Current (Note 2) I S - - -27 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 4. Guaranteed by design, not subject to production S -30 -1.0 - -2.5 - -3 0 - 15 - -12A - 1.64 - =3.3 nS - 20.2 - nS -5 5 - nS -1 0 - nC- 3.4 - nC- 9.8 - nC- 2.2 - - 930 - V GS =-4.5V, I D -6A - -5 5
0 0.5 1 1.5 2 -VDS Drain-to-Source Voltage (V) I- D )A( tnerruC niarD VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 2468 1 0 -VGS (V) R NOSD )Ωm( ID=-12A 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) I- S )A(tnerruC ecruoS TJ=150ć TJ=25ć 0 5 10 15 20 QG , Total Gate Charge (nC) V- SG )V( egatloV ecruoS ot etaG VDS=-20V ID=-12A 0.5 1.5 -50 0 50 1 00 150 TJ ,Junction Temperature ( ć) V dezilamroN )ht(SG 0.5 1.0 1.5 2.0 -50 0 50 1 00 150 TJ , Junction Temperature (ć) ecnatsiseR nO dezilamroN Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ RATING AND CHARACTERISTICS CURVES (RM27P30LD )
1 5 9 13 17 21 25-VDS Drain to Source Voltage(V) )Fp( ecnaticapaC F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 1 00 -VDS (V) I- D )A( Tc=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 t , Pulse Width (s) R( esnopseR lamrehT dezilamroN CJθ ) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform RATING AND CHARACTERISTICS CURVES (RM27P30LD )
Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g34/g1783/g19 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 TYP. 0.114 TYP. L2 1.400 1.700 0.055 0.067 L3 1.600 TYP. 0.063 TYP. L4 0.600 1.000 0.024 0.039 /g301 1.100 1.300 0.043 0.051 /g537 e e e e h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP.
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE