RM2520ES6

RM2520ES6 RECTRON | Alldatasheet

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Technical content

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM2520ES6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel VDS = 25V,ID =1.1A RDS(ON) GS=4.5V RDS(ON) GS=2.5V P-Channel VDS = -20V,ID = -0.8A RDS(ON) GS=-4.5V RDS(ON) GS=-2.5V High power and current handing capability Lead free product is acquired Surface mount package Marking and pin Assignment SOT-23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

2520 RM2520ES6 SOT-23-6L Ø180mm 8mm 3000units

Absolute Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 25 -20 V Gate-Source Voltage V GS ±12 ±12 V TA=25 1.1 - 0.8Continuous Drain Current ID A Pulsed Drain Current (Note 1) I DM 5 -4 A Maximum Power Dissipation TA=25 PD 0.8 0.8 W Operating Junction and Storage Temperature Range T J,TSTG -55 To 150 -55 To 150 Thermal Characteristic Thermal Resistance,Junction-to-Ambient R N-Ch 156 /W Thermal Resistance,Junction-to-Ambient R P-Ch 156 /W RM2520ES6 Halogen-free 2019-03/15 REV:D 550 650 ( typ.-25) 800 1200 2520 ESD >6KV, HBM (Gate-Source Zenner)

Electrical Characteristics ( A 25 °C Unless Otherwise Noted ) Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage V GS =0V , I DS = -250 μA -20 V VGS(th) Gate Threshold Voltage V DS =V GS,I DS = -250 μA -0.3 -1.0 V IDSS Drain Leakage Current VDS =- 2 0V ,VGS =0V - - - 1 μ A TJ =8 5 ഒ -- - 3 0 μ A IGSS Gate Leakage Current V GS =±8V ,V DS =0V - - ±1 0 μ A RDS(ON)a On-State Resistance VGS =- 1 . 2 V,IDS =- 0 . 0 1 A - 2 - Diode Characteristics VSDa Diode Forward Voltage I SD =- 0 . 5A ,VGS =0V - - 1 . 3 V trr Reverse Recovery Time ISD =- 0 . 5A ,d lSD /d t=1 0 0A/μ s -7 0-n s Qrr Reverse Recovery Charge - 68 - nC Dynamic Characteristicsb Ciss Input Capacitance VGS =0V ,V DS =- 1 0V Frequency = 1 MHz - 87 - pFCoss Output Capacitance - 15 - Crss Reverse Transfer Capacitance - 8.2 - td(on) Turn-on Delay Time VDS =- 3 0V ,VGEN =- 1 0V , RG =2 5Ω ,R L =6 0Ω , IDS =- 0 . 6 7A -5 . 6- ns tr Turn-on Rise Time - 5.3 - td(off) Turn-off Delay Time - 30 - tf Turn-off Fall Time - 21 - Qg Total Gate Charge VGS =- 4 . 5V ,VDS =- 1 0V , IDS =- 0 . 6 7A -1 . 8- pCQgs Gate-Source Charge - 0.82 - Qgd Gate-Drain Charge - 0.59 - Notes烉 a : Pulse test ; pulse width ≤300 μs, duty cycle ≤2% b : Guaranteed by design, not subject to production testing

Electrical Characteristics ( A 25 °C Unless Otherwise Noted ) Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage V GS =0V , I DS = 250 μA 25 V VGS(th) Gate Threshold Voltage V DS =V GS,I DS = 250 μA 0.4 1.1 V IDSS Drain Leakage Current VDS =2 5V ,V GS =0V - - 1 μ A TJ =8 5 ഒ -- 3 0 μ A IGSS Gate Leakage Current V GS =±1 0V ,V DS =0V - - ±1 0 μ A RDS(ON)a On-State Resistance VGS =4 . 5V ,IDS = 0.5 A - 0.5 0.6 VGS =2 . 5V ,IDS = 0.2 A - 0.55 0.7 Diode Characteristics VSDa Diode Forward Voltage I SD =0 . 5A ,VGS =0V - - 1 . 3 V trr Reverse Recovery Time ISD =0 . 5A ,d lSD /d t=1 0 0A/μ s -4 0-n s Qrr Reverse Recovery Charge - 39 - nC Dynamic Characteristicsb Ciss Input Capacitance VGS =0V ,V DS =1 0V Frequency = 1 MHz -3 0- pFCoss Output Capacitance - 3 - Crss Reverse Transfer Capacitance - 1 - td(on) Turn-on Delay Time VDS =3 0V ,V GEN =1 0V , RG =2 5Ω ,R L =6 0Ω , IDS =0 . 9 5A -3 . 6- ns tr Turn-on Rise Time - 3.3 - td(off) Turn-off Delay Time - 20 - tf Turn-off Fall Time - 11 - Qg Total Gate Charge VGS =4 . 5V ,VDS =1 0V , IDS =0 . 9 5A -0 . 6- pCQgs Gate-Source Charge - 0.26 - Qgd Gate-Drain Charge - 0.17 - Notes烉 a : Pulse test ; pulse width ≤300 μs, duty cycle ≤2% b : Guaranteed by design, not subject to production testing

Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) Tj - Junction Temperature (ƱƱC) T j - Junction Temperature (ƱC) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 TA=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad RθJA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TA=25 o C,VG=4.5V 0.01 0.1 1 10 100 1E-3 0.01 0.1 1ms Rds(on) Limit TC=25 o C 10ms 100ms DC 300us

N- Typical Characteristics Output Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (Ω) VDS - Drain-Source Voltage (V) I D - Drain Current (A) Transfer Characteristics Gate Threshold Voltage RDS(ON) - On Resistance (Ω) Normalized Threshold Voltage VGS - Gate-Source Voltage (V) T j - Junction Temperature (°C) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS= 4.5V VGS= 2.5 V -50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IDS = 250 μA 123456789 1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID= 0.5 A 3.0 V 2.0 V 1.0 V

N- Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) Tj - Junction Temperature (°C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) Q G - Gate Charge (pC) -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 RON@Tj= 25 o C: 0.5 Ω VGS= 4.5 V ID = 0.5 A 0.1 Tj= 150 o C Tj =25 o C 0 5 10 15 20 Frequency = 1 MHz Crss Coss Ciss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS= 10 V IDS= 0.95 A

Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) Tj - Junction Temperature (ƱƱC) T j - Junction Temperature (ƱC) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient -VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 TA=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad RθJA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 TA=25 o C,VG= -4.5V 0.01 0.1 1 10 100 1E-3 0.01 0.1 1ms Rds(on) Limit TC=25 o C 10ms 100ms DC

Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) RDS(ON) - On Resistance (Ω) -VDS - Drain-Source Voltage (V) -I D - Drain Current (A) Transfer Characteristics Gate Threshold Voltage RDS(ON) - On Resistance (Ω) Normalized Threshold Voltage -VGS - Gate-Source Voltage (V) T j - Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 VGS= -4.5V VGS= -2.5 V -50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IDS = -250 μA 0123456789 1 0 0.5 1.0 1.5 2.0 2.5 3.0 ID= -0.5 A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -2.0 V -1.0 V

Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance -IS - Source Current (A) Tj - Junction Temperature (°C) -V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) Q G - Gate Charge (pC) -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 RON@Tj= 25 o C: 0.85 Ω VGS= -4.5 V ID = -0.5 A 0.1 Tj= 150 o C Tj =25 o C 0 5 10 15 20 100 120 Frequency = 1 MHz Crss Coss Ciss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS= -10 V IDS= -0.67 A

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