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N-Channel Enhancement Mode Power MOSFET

Description

The RM24N200TI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ V DS =200V,ID =24A RDS(ON) < 80mȍ @ VGS=10V (Typ:62m ȍ) ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high E AS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability Application ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ Uninterruptible power supply Schematic diagram TO-220F top view 100% UIS TESTED! 100% ǻVds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity - - Absolute Maximum Ratings (TA=25ććunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 24 A Drain Current-Continuous(TC=100ć) I D (100ć) 16.5 A Pulsed Drain Current IDM 100 A Maximum Power Dissipation PD 45 W Single pulse avalanche energy (Note 5) E AS 250 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ć Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RșJA 3.33 /W ć 2017-02 REV:O15 RM24N200TI 24N200 RM24N200TI TO-220F -

Electrical Characteristics (TA=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250ȝA 200 220 - V Zero Gate Voltage Drain Current I DSS V DS=200V,VGS=0V - - 1 ȝA Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250ȝA 1.0 1.5 2.5 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=15A - 62 80 m ȍ Forward Transconductance g FS V DS=10V,ID=15A 30 - - S Dynamic Characteristics (Note4) Input Capacitance C lss 4200 PF Output Capacitance C oss 163 PF Reverse Transfer Capacitance C rss VDS=25V,VGS=0V, F=1.0MHz 75 PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 - nS Turn-on Rise Time t r - 18 - nS Turn-Off Delay Time t d(off) - 22 - nS Turn-Off Fall Time t f VDD=100V,ID=15A VGS=10V,RGEN=2.5ȍ - 5 - nS Total Gate Charge Q g 60 nC Gate-Source Charge Q gs 19 nC Gate-Drain Charge Q gd VDS=100V,ID=15A, VGS=10V 17 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=15A - - 1.2 V Diode Forward Current (Note 2) I S - - - 24 A Reverse Recovery Time trr - 90 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 15A di/dt = 100A/ȝs(Note3) - 300 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ” 10 sec. 3. Pulse Test: Pulse Width ” 300ȝs, Duty Cycle ” 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: Tj=25ć,VDD=50V,VG=10V,L=0.5mH,Rg=25ȍ

1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE