RM2333 RECTRON | Alldatasheet
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Technical content
P-Channel Enhancement Mode Power MOSFET
Description
The RM2333 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ƽ V DS = -12V,I D = -6A R DS(ON) < 45mΩ(max) @ V GS =-2.5V R DS(ON) < 30mΩ(max) @ V GS =-4.5V ƽ High power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package Application ƽ PWM applications ƽ Load switch ƽ Power management D G S Schematic diagram Marking and pin assignment Device Marking Device Device Pack age Reel Size Tape width Quantity
2333 RM2333
Absolute Maximum Ratings (TA=25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -12 V Gate-Source Voltage V GS ±12 V Drain Current -Continuous I D -6 A Drain Current -Pulsed (Note 1) I DM -20 A Maximum Power Dissipation P D 1.8 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ć Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 69 /W ć Electrical Characteristics (TA=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -12 - - V RM2333 SOT-23 Ø180mm 8 mm 3000 units Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM2333V SOT-23 top view 2019-02/15 REV:A
Zero Gate Voltage Drain Current I DSS V DS=-12V,VGS=0V - - -1 ȝA Gate-Body Leakage Current I GSS V GS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250ȝA -0.4 -0.65 -1.0 V VGS=-4.5V, ID=-6A - 19 30 Drain-Source On-State Resistance R DS(ON) VGS=-2.5V, ID=-5A - 26 45 mȍ Forward Transconductance g FS V DS=-5V,ID=-6A 17 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1100 - PF Output Capacitance C oss - 390 - PF Reverse Transfer Capacitance C rss VDS=-6V,VGS=0V, F=1.0MHz - 300 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 25 - nS Turn-on Rise Time t r - 45 - nS Turn-Off Delay Time t d(off) - 72 - nS Turn-Off Fall Time t f VDD=-6V,ID=-1A , RL=6ȍ,VGEN=-4.5V,Rg=6ȍ - 60 - nS Total Gate Charge Q g - 11.5 - nC Gate-Source Charge Q gs - 1.5 - nC Gate-Drain Charge Q gd VDS=-6V,ID=-6A,VGS=-4.5V - 3.2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD V GS=0V,IS=-1.0A - - -1.2 V Diode Forward Current (Note 2) IS - - -6 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300ȝs, Duty Cycle 2%. 4. Guaranteed by design, not subject to production
- All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 /g537 0° 8°
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