RM220N85T7 RECTRON | Alldatasheet

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Technical content

Features

Advanced trench cell design Super Trench MSL1 Tj max 175Ȼ

Applications

High power inverter system BMS appliances Inverter appliances BV ʇ V RDS(ON) ʆ 2.8 mΩ @ VGS = 10 V Ptot ʆ 250 W ID ʆ 220 A Simplified Outline D S G 2,3 5,6,7 Top View TO-263-7L N-Channel Enhancement Mode Power MOSFET RM220N85T7 Symbol Source 1.Gate 4.Drain D S G Product Name Marking RM220N85T7 Package Quantity TO-263-7L 800 Halogen-free Symbol Parameter Conditions Min Max Unit VDS Drain-Source Voltage TC = 25 ഒ 85 - V VGS Gate-Source Voltage TC = 25 ഒ -± 2 0 V ID* Drain Current ( DC ) TC = 25 ഒ, VGS = 10 V - 220 A ID* Drain Current ( DC ) TC = 100 ഒ, VGS = 10 V - 156 A IDM*,* Drain Current ( Pulsed ) TC = 25 ഒ, VGS = 10 V - 800 A Ptot Drain power dissipation TC = 25 ഒ - 250 W Tstg Storage Temperature -55 175 ഒ TJ Junction Temperature - 175 ഒ IS Continuous-Source Current TC = 25 ഒ - 220 A EAS Single Pulsed Avalanche Energy V DD= 100V, L= 0.1 mH - 805 mJ RθJA Thermal Resistance- Junction to Ambient - 32 ഒ/W RθJC** Thermal Resistance- Junction to Case - 0.45 ഒ/W Notes:* Pulse width /g100300/g80s, duty cycle /g1002% Surface Mounted on minimum footprint pad area * Limited by bonding wire Limiting Values 2022-09/113 REV:O 220N85

Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, IDS = 250 μA 85 95 - V VGS(th) Gate Threshold Voltage VDS = VGS, IDS = 250 μA 2 - 4 V IDSS Drain Leakage Current VDS = 85V, VGS = 0 V - - 1 μA TJ = 85 ć - - 30 μA IGSS Gate Leakage Current VGS = 0 V, VGS = ± 20 V - - ±100 nA RDS(ON)a On-State Resistance VGS = 10 V, IDS = 30 A - 2.4 2.8 m¡ Diode Characteristics VSDa Diode Forward Voltage ISD = 30 A, VGS = 0 V - - 1.2 V trr Reverse Recovery Time IDS = 30 A, VGS = 0 V dlSD/dt = 100 A/μs - 78 - nS Qrr Reverse Recovery Charge - 110 - nC Dynamic Characteristicsb Ciss Input Capacitance VGS = 0 V, VDS = 40 V Frequency = 1 MHz - 6234 - pF Coss Output Capacitance - 1180 - Crss Reverse Transfer Capacitance - 97 - td(on) Turn-on Delay Time VDS = 40 V, VGEN = 10 V, RG = 4.5 Ω, RL = 1.3 Ω, IDS = 30 A - 41 - nS tr Turn-on Rise Time - 68 - td(off) Turn-off Delay Time - 76 - tf Turn-off Fall Time - 44 - Gate Charge Characteristicsb Qg Total Gate Charge VDS = 40 V, VGS = 10 V, IDS = 30 A - 124 - nC Qgs Gate-Source Charge - 31.2 - Qgd Gate-Drain Charge - 39.2 - Notes烉 a : Pulse test ; pulse width /g100 300 /g80s, duty cycle /g100 2% b : Guaranteed by design, not subject to production testing Electrical Characteristics ( TA=25ഒ Unless Otherwise Noted )

Power Capability Current Capability Ptot - Power (W) ID - Drain Current (A) Tmp – Mounting Point Temp. (°C) Tmp – Mounting Point Temp. (°C) Safe Operating Area Transient Thermal Impedance ID - Drain Current (A) Normalized Effective Transient VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 25 50 75 100 125 150 175 200 100 150 200 250 300 TC=25 o C 0.01 0.1 1 10 100 50 0 10 0 50 0 100ms 1ms 10ms Rds( on) Lim it TC=25oC DC 300us 0 25 50 75 100 125 150 175 2000 120 140 160 180 200 220 240 TC=25 o C,VG=10V 1E-4 1E-3 0.01 0.1 1 0.01 0.1 0.02 Mounted on 1in pad R/g84JC : 0.45 o C/W 0.01 0.05 0.1 0.2 Single Pulse Duty = 0.5 RATING AND CHARACTERISTICS CURVES (RM220N85T7)

Output Characteristics On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) Normalized Threshold Voltage VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) -50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS= 250/g80A VGS= 5,6,7,8,9,10V 123456789 1 0 IDS=50A 0 10 20 30 40 50 2.0 2.5 3.0 3.5 4.0 4.5 V GS =10V RATING AND CHARACTERISTICS CURVES (RM220N85T7)

Normalized On Resistance Diode Forward Current Normalized On Resistance IS - Source Current (A) Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) 0 1 02 03 04 05 06 0 1000 2000 3000 4000 5000 6000 7000 Frequency=1MHz Crss Coss Ciss 0 2 04 06 08 0 1 0 0 VDS= 60V IDS = 50A -50 -25 0 25 50 75 100 125 150 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 1. 8 2. 0 2. 2 2. 4 RON @Tj =25oC: 5m/g38 VGS = 10V IDS = 50A Tj =25oC Tj=150oC RATING AND CHARACTERISTICS CURVES (RM220N85T7)

MIN. MAX. A 4.30 4.70 0.25 2.20 2.60 b 0.65 0.85 0.65 0.80 0.80 1.00 0.80 0.95 c 0.45 0.60 0.45 0.55 1.25 1.40 D 9.00 9.40 6.86 7.42 E 9.68 10.08 7.70 8.30 e

1.27 BSC

7.62 BSC

L 1.78 2.79 1.60 1.78

0.25 BSD

H 14.61 15.88

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