RM210N75HD RECTRON | Alldatasheet

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Technical content

N-Channel Enhancement Mode Power MOSFET

Description

The RM210N75HD uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features ƽ V DSS =75V,I D =210A R DS(ON) < 4mΩ @ V GS =10V ƽ Good stability and uniformity with high E AS ƽ Special process technology for high ESD capability ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Excellent package for good heat dissipation Application ƽAutomotive applications ƽHard switched and high frequency circuits ƽUninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 210N75 RM210N75HD TO-263-2L - -- Absolute Maximum Ratings (T C =25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DSS 75 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 210 A Drain Current-Continuous(T C =100ć)I D (100ć)1 5 0 A Pulsed Drain Current I DM 840 A Maximum Power Dissipation P D 330 W Derating factor 2.2 W/ ć Single pulse avalanche energy (Note 4) E AS 2200 mJ Operating Junction and Storage Temperature Range T J STG -55 To 175 ć RM210N75HD 2019-09/15 REV:B Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM210N75HDV

Thermal Resistance,Junction-to-Case (Note 1) R/g537JC 0.455 /Wć Electrical Characteristics (TA=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250/g541A 75 V Zero Gate Voltage Drain Current I DSS V DS=75V,VGS=0V 1 /g541A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V ±200 nA On Characteristics Gate Threshold Voltage V GS(th) V DS=VGS,ID=250/g541A 2 3 4 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=40A 3 4 m/g525 Forward Transconductance g FS V DS=25V,ID=40A 100 165 S Dynamic Characteristics Input Capacitance C lss 11000 PF Output Capacitance C oss 914 PF Reverse Transfer Capacitance C rss VDS=25V,VGS=0V, F=1.0MHz 695 PF Switching Characteristics Turn-on Delay Time t d(on) 23 nS Turn-on Rise Time t r 190 nS Turn-Off Delay Time t d(off) 130 nS Turn-Off Fall Time t f VDD=30V,ID=2A,RL=15/g525 VGS=10V,RG=2.5/g525 120 nS Total Gate Charge Q g - 250 nC Gate-Source Charge Q gs - 48 nC Gate-Drain Charge Q gd ID=30A,VDD=30V,VGS=10V - 98 nC Drain-Source Diode Characteristics Diode Forward Voltage V SD V GS=0V,IS=40A 1.2 V Reverse Recovery Time trr 48 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 40A di/dt = 100A//g541s(Note2) 78 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Surface Mounted on FR4 Board, t /g148 10 sec. 2. Pulse Test: Pulse Width /g148 400/g541s, Duty Cycle /g148 2%. 3. EAS condition˖Tj=25ć,VDD=37.5V,VG=10V,L=0.5mH,Rg=25/g525,IAS=37A

1˅˅EAS test Circuit 2˅Gate charge test Circuit 3˅Switch Time Test Circuit

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 0.000 0.150 0.000 0.006 B 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 L 15.050 15.450 0.593 0.608 L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V 5.600 REF 0.220 REF

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE