RM20N150LD RECTRON | Alldatasheet

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Technical content

N-Channel Super Trench Power MOSFET

Description

The RM20N150LD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features

  • VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested Application
  • LED backlighting
  • Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! Schematic diagram TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 20N150 RM20N150LD TO-252-2L Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 150 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 20 A Drain Current-Continuous(TC=100 )ć I D (100ć) 14 A Pulsed Drain Current I DM 80 A Maximum Power Dissipation P D 68 W Derating factor 0.45 W/ ć Single pulse avalanche energy (Note 5) E AS 65 mJ Operating Junction and Storage Temperature Range T J,TSTG -55 To 175 ć Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 2.2 /W ć G D S RM20N150LD Halogen-free● 2019-05/17 REV:O

Electrical Characteristics (TA=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250/g541A 150 - - V Zero Gate Voltage Drain Current I DSS V DS=150V,VGS=0V - - 1 /g541A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250/g541A 2.5 3.3 4.5 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=10A - 59 65 m/g525 Forward Transconductance g FS V DS=5V,ID=10A 15 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 600 PF Output Capacitance C oss - 74.7 PF Reverse Transfer Capacitance C rss VDS=75V,VGS=0V, F=1.0MHz - 10.8 PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 9.5 - nS Turn-on Rise Time t r - 5.5 - nS Turn-Off Delay Time t d(off) - 12.5 - nS Turn-Off Fall Time t f VDD=75V, RL=7.5/g58/g3 VGS=10V,RG=3/g525 - 3 - nS Total Gate Charge Q g - 12 - nC Gate-Source Charge Q gs - 5.7 - nC Gate-Drain Charge Q gd VDS=75V,ID=10A, VGS=10V - 2.7 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=10A - - 1.2 V Diode Forward Current (Note 2) I S - - 20 A Reverse Recovery Time t rr - 29 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF = IS di/dt = 100A//g541s(Note3) - 130 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25 ,Vć DD=50V,VG=10V,L=0.5mH,Rg=25/g525

1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.83 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 TYP. 0.114 TYP. L2 1.400 1.700 0.055 0.067 L3 1.600 TYP. 0.063 TYP. L4 0.600 1.000 0.024 0.039 /g301 1.100 1.300 0.043 0.051 /g537 e e e e h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP.

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE