RM2020ES6

RM2020ES6 RECTRON | Alldatasheet

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Technical content

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM2020ES6 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel P-Channel V DS = -20V,I D = -0.8A R DS(ON) GS =-4.5V R DS(ON) GS =-2.5V High power and current handing capability Lead free product is acquired Surface mount package Marking and pin Assignment SOT-23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

2020 RM2020ES6 SOT-23-6L Ø180mm 8mm 3000units

Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS -20 Gate-Source Voltage V GS ±12 ±12 V T A =25 0.75 -0.8 Continuous Drain Current I D A Pulsed Drain Current (Note 1) I DM 5 -4 A Maximum Power Dissipation T A =25 P D 0.15 Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 Thermal Characteristic Thermal Resistance,Junction-to-Ambient R N-Ch 156 /W Thermal Resistance,Junction-to-Ambient R P-Ch 156 /W RM2020ES6 Halogen-free 2022-08/15 REV:A 800 1200 2020 ESD >6KV, HBM (Gate-Source Zenner) 20 V V DS = 20V,I D =0.75A R DS(ON) GS =4.5V R DS(ON) GS =2.5V 380 450 R DS(ON) GS =1.8V 800 0.8 W

Electrical Characteristics

A 25 °C Unless Otherwise Noted ) Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V , I DS = -250 μA -20 V V GS(th) Gate Threshold Voltage V DS GS DS I DSS Drain Leakage Current V DS =- 2 0V ,V GS =0V - - - 1 μ A T J =8 5 ഒ - - - 30 μ A I GSS Gate Leakage Current V GS =±8V ,V DS =0V - - ±1 0 μ A R DS(ON)a On-State Resistance V GS =- 4 . 5V ,I DS V GS =- 2 . 5V ,I DS V GS =- 1 . 5 V,I DS = -0.04A - 1.5 - V GS =- 1 . 2 V,I DS =- 0 . 0 1 A - 2 - Diode Characteristics V SDa Diode Forward Voltage I SD =- 0 . 5A ,V GS =0V - - 1 . 3 V t rr Reverse Recovery Time I SD =- 0 . 5A ,d l SD /d t=1 0 0A/μ s - 7 0 - n s Q rr Reverse Recovery Charge - 68 - nC Dynamic Characteristics b C iss Input Capacitance V GS =0V ,V DS =- 1 0V Frequency = 1 MHz - - pFC oss Output Capacitance - - C rss Reverse Transfer Capacitance - - t d (on) Turn-on Delay Time V DS =- 3 0V ,V GEN =- 1 0V , R G =2 5Ω ,R L =6 0Ω , I DS =- 0 . 6 7A - 5 .6 - ns t r Turn-on Rise Time - 5.3 - t d (off) Turn-off Delay Time - 30 - t f Turn-off Fall Time - 21 - Q g Total Gate Charge V GS =- 4 . 5V ,V DS =- 1 0V , I DS =- 0 . 6 7A - - Q gs Gate-Source Charge - - Q gd Gate-Drain Charge - - Notes烉 a : Pulse test ; pulse width ≤300 μ s, duty cycle ≤2% b : Guaranteed by design, not subject to production testing nC 1 .8 0.82 0.59 8.2

Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS V GS = 0V, I D =250μA 20 V Zero gate voltage drain current I DSS V DS =20V,V GS = 0V 1 μA Gate-body leakage current I GSS V GS =±1,g-9V, V DS = 0V ±,g"-0 μA Gate threshold voltage (note 1) V GS(th) V DS GS , I D V GS =4.5V, I D V GS =2.5V, I D Drain-source on-resistance (note 1) R DS(on) V GS =1.8V, I D Forward tranconductance (note 1) g FS V DS =10V, I D =0.8A 1.6 S Diode forward voltage(note 1) V SD I S =0.15A, V GS = 0V 1.2 V DYNAMIC PARAMETERS (note 2) Input Capacitance C iss 79 120 pF Output Capacitance C oss 13 20 pF Reverse Transfer Capacitance C rss V DS =16V,V GS =0V,f =1MHz 9 15 pF SWITCHING PARAMETERS(note 2) Turn-on delay time t d(on) 6.7 ns Turn-on rise time t r 4.8 ns Turn-off delay time t d(off) 17.3 ns Turn-off fall time t f V GS =4.5V,V DS =10V, I D =0.5A,R GEN =10/g525 7.4 ns Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd V DS =10V,V GS =4.5V,I D =,g-9,g-7,g"-,g"4A Notes : 1. Pulse Te st : Pulse width/g148300μs, duty cycle/g1480.5%. 2. Guaranteed by design, not subject to production testing. /g48/g50/g54/g41/g40/g55/g3/g3/g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 a T =25 /g1071 unless otherwise specified 1.2 0.28 0.2 nC nC nC

,g-9,g-7,g-9,g". ,g-9,g-7,g". ,g". ,g"- ,g-9,g-7,g-9 ,g-9,g-7,g"4 ,g".,g-7,g-9 ,g".,g-7,g"4 ,g"-,g-7,g-9 ,g"-,g-7,g"4 ,g"",g-7,g-9 ,g"",g-7,g"4 ,g"/,g-7,g-9 ,g"/,g-7,g"4 ,g"4,g-7,g-9 ,g"-,g-9,g-9 ,g"-,g"4,g-9 ,g"",g-9,g-9 ,g"",g"4,g-9 ,g"/,g-9,g-9 ,g"/,g"4,g-9 ,g"4,g-9,g-9 ,g".,g-9,g-9 ,g"-,g-9,g-9 ,g"",g-9,g-9 ,g"/,g-9,g-9 ,g"4,g-9,g-9 ,g"5,g-9,g-9 ,g"6,g-9,g-9 ,g"7,g-9,g-9 ,g-9,g-7,g-9 ,g-9,g-7,g"4 ,g".,g-7,g-9 ,g".,g-7,g"4 ,g"-,g-7,g-9 ,g"-,g-7,g"4 ,g"",g-7,g-9 ,g"",g-7,g"4 ,g"/,g-7,g-9 ,g-9,g-7,g"- ,g-9,g-7,g"" ,g-9,g-7,g"/ ,g-9,g-7,g"4 ,g-9,g-7,g"5 ,g-9,g-7,g"6 ,g-9,g-7,g"7 ,g5-,g88,g79,g86,g7",g7- ,g5-,g88,g79,g86,g7",g7- ,g55,g68,g/",g".,g-9,g-9ć VSDIS —— ,g55,g68,g/",g"-,g"4ć ,g/ ,g/ ,g54,g5.,g56,g5/,g/8,g4.,g/,g/8,g56,g5/,g5/,g4.,g49,g55,g/,g/,g/,g/,g44,g54,g/,g/,g/,g--,g/6,g-" ,g57,g4",g54,g/",g"/,g57,g-5,g"4,g57 ,g57,g4",g54,g/",g"",g57 ,g57,g4",g54,g/",g"-,g-7,g"4,g57 ,g57,g4",g54,g/",g"-,g57 Output Characteristics ,g57,g4",g54,g/",g".,g-7,g"4,g57 ,g/ ,g/ ,g/9,g5/,g/6,g44,g49,g/,g/8,g56,g5/,g5/,g4.,g49,g55,g/,g/,g/,g/,g44,g/9,g/,g/,g/,g/,g--,g/6,g-" ,g57,g4",g54,g/",g".,g-7,g"7,g57 ,g55,g68,g/",g"-,g"4ć ,g5-,g88,g79,g86,g7",g7- ,g57,g4",g54,g/",g"/,g-7,g"4,g57 ,g57,g4",g54,g/",g"-,g-7,g"4,g57 ,g55,g68,g/",g"-,g"4ć ,g5-,g88,g79,g86,g7",g7- ,g/ ,g/ ,g/9,g5/,g/6,g44,g49,g/,g/8,g56,g5/,g5/,g4.,g49,g55,g/,g/,g/,g/,g44,g/9,g/,g/,g/,g/,g--,g/6,g-" ID——RDS(ON) ,g/ ,g55,g68,g/",g".,g-9,g-9ć ,g55,g68,g/",g"-,g"4ć ,g/ ,g/ VGS——RDS(ON) ,g/ ,g44,g/9,g/",g-9,g-7,g"5,g"4,g/6 ,g57,g/9,g54,g/",g"",g57 ,g5-,g88,g79,g86,g7",g7- ,g/ ,g/ ,g/9,g5/,g/6,g44,g49,g/,g/8,g56,g5/,g5/,g4.,g49,g55,g/,g/,g/,g/,g44,g/9,g/,g/,g/,g/,g--,g/6,g-" Transfer Characteristics,g/ ,g55,g68,g/",g".,g-9,g-9ć,g55,g68,g/",g"-,g"4ć ,g/ ,g/ ,g44,g/9,g/",g"-,g"4,g-9,g88,g/6 Threshold Voltage ,g55,g4/,g5/,g4.,g54,g4/,g5.,g47,g/9,g/,g57,g5.,g47,g55,g/6,g4",g4.,g/,g/,g/,g/,g57,g55,g4/,g/,g/,g/,g/,g--,g57,g-" ,g45,g56,g49,g/8,g55,g44,g5.,g49,g/,g55,g4.,g48,g5-,g4.,g5/,g/6,g55,g56,g5/,g4.,g/,g/,g/,g/,g55,g77,g/,g/,g/,g/,g--,g-"ć N-TypicalCharacteristics

Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) Tj - Junction Temperature (ƱƱC) T j - Junction Temperature (ƱC) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient -VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 TA=25 o C 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad RθJA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 TA=25 o C,VG= -4.5V 0.01 0.1 1 10 100 1E-3 0.01 0.1 1ms Rds(on) Limit TC=25 o C 10ms 100ms DC

Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) RDS(ON) - On Resistance (Ω) -VDS - Drain-Source Voltage (V) -I D - Drain Current (A) Transfer Characteristics Gate Threshold Voltage RDS(ON) - On Resistance (Ω) Normalized Threshold Voltage -VGS - Gate-Source Voltage (V) T j - Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 VGS= -4.5V VGS= -2.5 V -50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IDS = -250 μA 0123456789 1 0 0.5 1.0 1.5 2.0 2.5 3.0 ID= -0.5 A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -2.0 V -1.0 V

Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance -IS - Source Current (A) Tj - Junction Temperature (°C) -V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) Q G - Gate Charge (pC) -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 RON@Tj= 25 o C: 0.85 Ω VGS= -4.5 V ID = -0.5 A 0.1 Tj= 150 o C Tj =25 o C 0 5 10 15 20 100 120 Frequency = 1 MHz Crss Coss Ciss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS= -10 V IDS= -0.67 A

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