RM2003

RM2003 RECTRON | Alldatasheet

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Technical content

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM2003 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ƽ N-Channel V DS = 20V,I D =3A R DS(ON) < 35m/g525 @ V GS =4.5V R DS(ON) < 55m/g525 @ V GS =2.5V ƽ P-Channel V DS = -20V,I D = -3A R DS(ON) < 75m/g525 @ V GS =-4.5V R DS(ON) < 100m/g525 @ V GS =-2.5V ƽ High power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package Marking and pin Assignment SOT-23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

2003 RM2003 SOT-23-6L Ø180mm 8mm 3000 units

Absolute Maximum Ratings (T A =25ććunless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 20 -20 V Gate-Source Voltage V GS ±12 ±12 V T A =25ć 3 -3 Continuous Drain Current T A =70ć I D 2.4 -2.4 A Pulsed Drain Current (Note 1) I DM 13 -13 A Maximum Power Dissipation T A =25ć P D 0.8 0.8 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 ć Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) R /g537JA N-Ch 156 /W ć Thermal Resistance,Junction-to-Ambient (Note2) R /g537JA P-Ch 156 /W ć N-channel P-channel 2003 RM2003 ƽ Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM2003V 201 02/15 REV: B

Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250/g541A 20 22 - V Zero Gate Voltage Drain Current I DSS V DS=20V,VGS=0V - - 1 /g541A Gate-Body Leakage Current I GSS V GS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250/g541A 0.5 0.75 1.2 V VGS=2.5V, ID=2.8A - 36 55 m/g525 Drain-Source On-State Resistance R DS(ON) VGS=4.5V, ID=3A - 28 35 m/g525 Forward Transconductance g FS V DS=5V,ID=3A - 8 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 260 - PF Output Capacitance C oss - 48 - PF Reverse Transfer Capacitance C rss VDS=10V,VGS=0V, F=1.0MHz - 27 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 2.5 - nS Turn-on Rise Time t r - 3.2 - nS Turn-Off Delay Time t d(off) - 21 - nS Turn-Off Fall Time t f VDD=10V, RL=3.3/g525 VGS=4.5V,RGEN=6/g525 - 3 - nS Total Gate Charge Q g - 2.9 5 nC Gate-Source Charge Q gs - 0.4 - nC Gate-Drain Charge Q gd VDS=10V,ID=3A, VGS=4.5V - 0.6 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=3 A - - 1.2 V Diode Forward Current (Note 2) I S - - 3 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production

Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=-250/g541A -20 - V Zero Gate Voltage Drain Current I DSS V DS=-20V,VGS=0V - - -1 /g541A Gate-Body Leakage Current I GSS V GS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250/g541A -0.4 -0.7 -1 V VGS=-4.5V, ID=-2.5 A - 60 75 m/g525 Drain-Source On-State Resistance R DS(ON) VGS=-2.5V, ID=-2A - 81 100 m/g525 Forward Transconductance g FS V DS=-5V,ID=-2.5A - 9.5 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 325 - PF Output Capacitance C oss - 63 - PF Reverse Transfer Capacitance C rss VDS=-10V,VGS=0V, F=1.0MHz - 37 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 5.5 - nS Turn-Off Delay Time t d(off) - 22 - nS Turn-Off Fall Time t f VDD=-10V, RL=5/g525 VGS=-4.5V,RGEN=3/g525 - 8 - nS Total Gate Charge Q g - 3.2 - nC Gate-Source Charge Q gs - 0.6 - nC Gate-Drain Charge Q gd VDS=-10V,ID=-2A, VGS=-4.5V - 0.9 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=-3A - - -1.2 V Diode Forward Current (Note 2) I S - - -3 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE