RM1A2N20ES2 RECTRON | Alldatasheet
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Technical content
N-Channel Enhancement Mode Power MOSFET General Features V DS = 20V,I D = 1.2A R DS(ON) GS R DS(ON) < 0.22Ω @ V GS =2.5V Lead free product is acquired Application Logic-level shift Interfacing switching Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity -23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T A =25 unless otherwise noted) Halogen-free 4.5V=4.5V=4.5V SOT < 0.18Ω @ V 34K RM1A2N20ES2 Parameter Symbol Value Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ±12 V Continuous Drain Current (T a =25 ć I D 1.2 A Continuous Drain Current (T a =70 ć I D 1.0 A Pulsed Drain Current I DM 3.5 A Power Dissipation P D 0.42 W Thermal Resistance from Junction to Ambient R θJA 298 ć Junction Temperature T J 150 ć Storage Temperature T STG -55~ +150 ć RM1A2N20ES2 ESD protected up to 4.0KV (HBM) Load switching 2020-0 6/59 REV:O
Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250μA 20 - - V Zero gate voltage drain current IDSS VDS =20V, VGS = 0V - - 1 μA Gate-body leakage current IGSS VGS =ά12V,VDS = 0V - - ±2000 nA Gate threshold voltage(3) VGS(th) VDS =VGS, ID =250μA 0.35 0.75 1.1 V Drain-source on-resistance(3) RDS(on) VGS =4.5V, ID =0.5A - 120 180 mΩ VGS =2.5V, ID =0.3A - 160 220 Dynamic characteristics Input Capacitance Ciss VDS =16V, VGS =0V, f =1MHz - 60 118 pFOutput Capacitance Coss - 9 18 Reverse Transfer Capacitance Crss - 7.5 15 Switching characteristics Turn-on delay time td(on) VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω - 6.7 - ns Turn-on rise time tr - 4.8 - Turn-off delay time td(off) - 17.3 - Turn-off fall time tf - 7.4 - Total Gate Charge Qg VDS=15V, ID=1A, VGS=4.5V - 1.6 - nCGate-Source Charge Qgs - 0.2 - Gate-Drain Charge Qgd - 0.2 - Source-Drain Diode characteristics Diode Forward voltage(3) VDS VGS =0V, IS=0.3A - - 1.2 V Diode Forward current(4) IS - - 1.2 A Notes: 1. Repetitive Rating: pulse width limited by maximum junction temperature 2. Pulse Test: pulse width≤300μs, duty cycle≤2% 3. Surface Mounted on FR4 Board,t≤10 sec
RATING AND CHARACTERISTICS CURVES (RM1A2N20ES)
■SOT-23 Package information ■SOT-23 Suggested Pad Layout
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