RM160N40DF RECTRON | Alldatasheet

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N-Channel Enhancement Mosfet Feature 40V,160A RDS（ON）<1.3mΩ＠VGS=10V (TYP:1.1mΩ) RDS（ON）<1.8mΩ＠VGS=4.5V (TYP:1.6mΩ) Split Gate Trench Technology Lead free product is acquired Excellent R DS（ON） and Low Gate Charge Application PWM applications Load Switch Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity (PCS) 160N40 RM160N40DF DFN5*6 -8L 13 inch 5000 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Ta =25℃) ID 160 A Continuous Drain Current (Ta =100℃) ID 100 A Pulsed Drain Currenr (1) IDM 480 A Singel Pulsed Avalanche Energy (2) EAS 473 mJ Power Dissipation PD 65 W Thermal Resistance from Junction to Case RθJC 1.9 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ DFN5X6-8L RM160N40DF ⚫ Halogen-free 2023-11/59 REV:O

MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µ A V Zero gate voltage drain current IDSS VDS =40V, VGS = 0V µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ± 100 nA Gate threshold voltage(3) VGS(th) VDS =VGS, ID =250µ A 1.0 1.6 2.0 V Drain-source on-resistance(3) RDS(on) VGS =10V, ID =25A 1.1 1.3 mΩ VGS =4.5V, ID =25A 1.6 1.8 Forward Threshold Voltage gfs VDS =2V, ID =25A S Gate Resistance Rg VDS =VGS =0V, f =1MHz Ω Dynamic characteristics Input Capacitance Ciss VDS =25V, VGS =0V, f =1MHz 3876 pF Output Capacitance Coss 1169 Reverse Transfer Capacitance Crss Switching characteristics Turn-on delay time td(on) VDD=20V, ID=25A, VGS=10V, RG=4.7Ω ns Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time tf Total Gate Charge Qg VDS=20V, ID=55A, VGS=4.5V nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr IF=50A,di/dt=100A/us nC Reverse Recovery Time Trr IF=50A,di/dt=100A/us ns Source-Drain Diode characteristics Diode Forward voltage(3) VDS VGS =0V, IS=50A 1.2 V Diode Forward current(4) IS 160 A Notes: 1. Repetitive Rating: pulse width limited by maximum junction temperature 2. EAS Condition:TJ=25℃,VDD=15V,RG=25Ω,L=0.5mH 3. Pulse Test: pulse width≤300μs, duty cycle≤2% 4. Surface Mounted on FR4 Board,t≤10 sec

Fig.1 Power Dissipation Derating Curve Fig.2 Avalanche Energy Derating Curve vs. Junction Temperature Fig.3 Typical Output Characteristics Fig. 4 Transconductance vs. Drain Current Fig.5 Typical Transfer Characteristics Fig. 6 State Resistance vs. Drain Current @-25℃ RATIN G AND CHARACTERISTI CS CURVES (RM160N40DF)

Fig.7 State Resistance vs. Drain Current @25℃ Fig. 8 State Resistance vs. Drain Current @125℃ Fig.9 Typical Capacitance vs. Drain Source Voltage Fig.10 Dynamic Input Characteristics Fig.11 Breakdown Voltage vs. Junction Temperature Fig. 12 Gate Threshold Voltage vs. Junction Temperature RATIN G AND CHARACTERISTI CS CURVES (RM160N40DF)

Fig.13 On-Resistance Variation vs. Junction Fig.14 Maximum Drain Current vs.Case Temperature Fig.15 Body Diode Forward Voltage vs. Reverse Drain Current RATIN G AND CHARACTERISTI CS CURVES (RM160N40DF)

Fig.16 Safe Operating Area Fig. 17 Transient Thermal Response Curve RATIN G AND CHARACTERISTI CS CURVES (RM160N40DF)

DFN5*6-8L Package Information

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