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N-Channel Enhancement Mode Power MOSFET

Description

The RM150N60T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ V DS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high E AS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability Application ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 150N60 RM150N60T2 TO-220-3L - -- Absolute Maximum Ratings (TC=25ćunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 150 A Drain Current-Continuous(TC=100ć)I D (100ć) 105 A Pulsed Drain Current IDM 600 A Maximum Power Dissipation PD 220 W RM150N60T2 2016-12 RE V:O15

Derating factor 1.47 W/ ć Single pulse avalanche energy (Note 5) E AS 1400 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ć Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) R/g537JC 0.68 /Wć Electrical Characteristics (TC=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250/g541A 60 68 - V Zero Gate Voltage Drain Current I DSS V DS=60V,VGS=0V - - 1 /g541A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250/g541A 2 3 4 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=75A - 3.4 4.5 m/g525 Forward Transconductance g FS V DS=50V,ID=75A 180 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 6500 - PF Output Capacitance C oss - 650 - PF Reverse Transfer Capacitance C rss VDS=25V,VGS=0V, F=1.0MHz - 590 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 26 - nS Turn-on Rise Time t r - 24 - nS Turn-Off Delay Time t d(off) - 91 - nS Turn-Off Fall Time t f VDD=30V,ID=2A,RL=15/g525 VGS=10V,RG=2.5/g525 - 39 - nS Total Gate Charge Q g - 163 nC Gate-Source Charge Q gs - 31 nC Gate-Drain Charge Q gd VDS=30V,ID=30A, VGS=10V - 64 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=40A - 1.2 V Diode Forward Current (Note 2) I S - - 150 A Reverse Recovery Time trr - 42 60 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 40A di/dt = 100A//g541s(Note3) - 66 80 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production 5. EAS condition˖Tj=25ć,VDD=30V,VG=10V,L=0.5mH,Rg=25/g525

1˅˅EAS test Circuits 2˅Gate charge test Circuit: 3˅Switch Time Test Circuit:

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.400 4.600 0.173 0.181 A1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 D 9.910 10.250 0.390 0.404 E 8.9500 9.750 0.352 0.384 E1 12.650 12.950 0.498 0.510 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 F 2.650 2.950 0.104 0.116 H 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 L 12.900 13.400 0.508 0.528 L1 2.850 3.250 0.112 0.128 V 7.500 REF. 0.295 REF. ž 3.400 3.800 0.134 0.150

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE