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N-Channel Enhancement Mode Power MOSFET

Description

The RM1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ V DS =150V,ID =5.2A RDS(ON) < 44m/g525 @ VGS=10V ˄Typ˖31m/g525˅ ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Low gate to drain charge to reduce switching losses Application ƽ Power switching application ƽ Hard switched and hig h frequency circuits ƽ Uninterruptible power supply Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

1505 RM1505S SOP-8 Ø330mm 12mm 2500 units

Absolute Maximum Ratings (TA=25ććunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5.2 A Drain Current-Continuous(TC=100 )ć ID (100ć) 3.7 A Pulsed Drain Current(Note 1) IDM 42 A Maximum Power Dissipation PD 3.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ć Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) R/g537JC 35.7 /W ć 2016-12 REV:O15 RM1505S

Electrical Characteristics (TA=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250/g541A 150 170 - V Zero Gate Voltage Drain Current I DSS V DS=150V,VGS=0V - - 1 /g541A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250/g541A 2.5 3.2 4.5 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5.2A - 31 44 m/g525 Forward Transconductance g FS V DS=50V,ID=5.2A 12 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1700 - PF Output Capacitance C oss - 190 - PF Reverse Transfer Capacitance C rss VDS=25V,VGS=0V, F=1.0MHz - 90 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 15 - nS Turn-on Rise Time t r - 13 - nS Turn-Off Delay Time t d(off) - 26 - nS Turn-Off Fall Time t f VDD=75V,ID=3.1A VGS=10V,RGEN=6.5/g525 - 14 - nS Total Gate Charge Q g - 35.8 - nC Gate-Source Charge Q gs - 7.5 - nC Gate-Drain Charge Q gd VDS=75V,ID=3.1A, VGS=10V - 13 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=3.1A - - 1.2 V Diode Forward Current (Note 2) I S - - 2.7 A Reverse Recovery Time trr - 50 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 3.1A, di/dt = 100A//g541s - 140 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production.

1) EAS test Circuits 2) Gate charge test Circuit 3) Switch Time Test Circuit

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 /g537 0r 8 r 0 r 8 r

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE