RM135N100HD RECTRON | Alldatasheet

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N-Channel Super Trench Power MOSFET

Description

Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switching and synchronous rectification. General Features ƽ V DS =100V,I D =135A R DS(ON) <4.6m/g525 @ V GS =10V ƽ Excellent gate charge x R DS(on) product ƽ Very low on-resistance R DS(on) ƽ 175 °C operating temperature ƽ Pb-free lead plating ƽ 100% UIS tested Application ƽ DC/DC Converter ƽ Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% /g507 Vds TESTED! Schematic diagram Marking and pin assignment TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 135N100 RM135N100HD TO-263-2L - - - Absolute Maximum Ratings (T C =25ććunless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous (Silicon Limited) I D 143 A Drain Current-Continuous (Package Limited) I D 135 A Drain Current-Continuous(T C =100ć) I D (100ć) 102 A Pulsed Drain Current I DM 500 A Maximum Power Dissipation P D 210 W Derating factor

1.4 W/ ć

Single pulse avalanche energy (Note 5) E AS 1050 mJ Operating Junction and Storage Temperature Range T J STG -55 To 175 ć RM135N100HD 2017-12/ 15 REV:B ƽP/N suffix V means AEC-Q101 qualified, e.g:RM135N100HDV ƽHalogen-free

Thermal Resistance,Junction-to-Case(Note 2) R/g537JC 0.71 /Wć Electrical Characteristics (TC=25ćunless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250/g541A 100 - V Zero Gate Voltage Drain Current I DSS V DS=100V,VGS=0V - - 1 /g541A Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250/g541A 2.5 4.5 V Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=60A - 3.8 4.6 m/g525 Forward Transconductance g FS V DS=10V,ID=60A - 60 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 6400 - PF Output Capacitance C oss - 731 - PF Reverse Transfer Capacitance C rss VDS=50V,VGS=0V, F=1.0MHz - 35 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 19 - nS Turn-on Rise Time t r - 76 - nS Turn-Off Delay Time t d(off) - 48 - nS Turn-Off Fall Time t f VDD=50V,ID=60A VGS=10V,RG=4.7/g525 - 14 - nS Total Gate Charge Q g - 92 nC Gate-Source Charge Q gs - 35.4 nC Gate-Drain Charge Q gd VDS=50V,ID=60A, VGS=10V - 18.8 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=135A - 1.2 V Diode Forward Current (Note 2) I S - - 135 A Reverse Recovery Time trr - 63 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = IS di/dt = 100A//g541s(Note3) - 142 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25 ,Vć DD=50V,VG=10V,L=0.5mH,Rg=25/g525

1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 0.000 0.150 0.000 0.006 B 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 L 15.050 15.450 0.593 0.608 L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V 5.600 REF 0.220 REF

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE