RM130N100HD RECTRON | Alldatasheet
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Technical content
N-Channel Super Trench Power MOSFET
Description
Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switching and synchronous rectification. General Features V DS =100V,I D =130A R DS(ON) GS =10V Excellent gate charge x R DS(on) product Very low on-resistance R DS(on) Pb-free lead plating 100% UIS tested Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% Schematic diagram TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 130N100 RM130N100HD TO-263-2L - - - Absolute Maximum Ratings (T C =25 unless otherwise noted) Halogen-free 5.4 RM130N100HD 2022-12/59 REV:A
Electrical Characteristics (T C =25 unless otherwise noted)
1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit
RATING AND CHARACTERISTICS CURVES (RM130N100HD)
RATING AND CHARACTERISTICS CURVES (RM130N100HD)
Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 0.000 0.150 0.000 0.006 B 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 L 15.050 15.450 0.593 0.608 L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V 5.600 REF 0.220 REF
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