RM12N100LD RECTRON | Alldatasheet
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Technical content
N-Channel Enhancement Mode Power MOSFET
Description
The RM12N100LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features V DS = 100V,ID =12A RDS(ON) < 112mΩ @ VGS=10V Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high E AS Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 12N100 RM12N100LD TO-252-2L - - - Absolute Maximum Ratings (TC=25 unless otherwise noted) Symbol Parameter Limit Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 12 A ID (100 ) Drain Current-Continuous(TC=100 ) 7.7 A IDM Pulsed Drain Current 24 A PD Maximum Power Dissipation 34.7 EAS Single pulse avalanche energy (Note 5) 256 mJ TJ,TSTG Operating Junction and Storage Temperature Range -55 To 150 RM12N100LD Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM12N100LDV 2019-01/83 REV:O RDS(ON) < 120mΩ @ VGS=4.5V W
R Thermal Resistance, Junction-to-Case (Note 2) 3.6 /W Electrical Characteristics (TC=25 unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage V GS=0V ID IDSS Zero Gate Voltage Drain Current V DS =80V,V GS IGSS Gate-Body Leakage Current V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) VGS(th) Gate Threshold Voltage V DS=VGS,ID RDS(ON) Drain-Source On-State Resistance GS=10V, I =10AD gFS Forward Transconductance V DS=5V,ID=10A - 13 - S Dynamic Characteristics (Note4) Clss Input Capacitance - 1535 Coss Output Capacitance - 60 Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, F=1.0MHz - 37 Switching Characteristics (Note 4) td(on) Turn-on Delay Time - 4.2 tr Turn-on Rise Time - 8.2 td(off) Turn-Off Delay Time - 35.6 tf Turn-Off Fall Time VDD=50V,RL VGS=10V,R 3.3GEN - 9.6 Qg Total Gate Charge - 26.2 Qgs Gate-Source Charge - 4.6 Qgd Gate-Drain Charge VDS=80V,ID=10A, VGS=10V - 5.1 Drain-Source Diode Characteristics VSD Diode Forward Voltage (Note 3) V GS=0V,IS=10A - - 1.2 V IS Diode Forward Current (Note 2) - - - 12 A trr Reverse Recovery Time - 37 - nS Qrr Reverse Recovery Charge TJ = 25°C, IF = 10A (Note3) - 27.3 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 4. Guaranteed by design, not subject to production 5. EAS Condition : Tj=25 ,V DD=50V,VG AS=32A 1.0 - V GS=4.5V, I =10ADV - 112 120 - nS - PF - PF - PF - nS - nS - nS - nC - nC - nC - nC
VDS , Drain-to-Source Voltage (V) ID )A( tnerruC niarD VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V VSD , Source-to-Drain Voltage (V) I S )A(tnerruC ecruoS TJ=150ć TJ=25ć 0.2 0.6 1.4 1.8 -50 0 50 1 00 150 TJ ,Junction Temperature (ć ) dezilamroNV )ht(SG )V( 0.5 1.0 1.5 2.0 2.5 -50 0 50 1 00 150 TJ , Junction Temperature (ć) ecnatsiseR nO dezilamroN Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ RATING AND CHARACTERISTICS CURVES (RM12N100LD)
VDS , Drain to Source Voltage (V) )Fp( ecnaticapaC F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 1 00 1000 VDS (V) I D )A( 10us 1ms 10ms 100ms DC TC=25ଇ Single Pulse 100us 0.001 0.01 0.1 t , Pulse Width (s) R( esnopseR lamrehT dezilamroN CJθ ) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXR©-& TON T 0.02 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1
2 LxI AS
Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform RATING AND CHARACTERISTICS CURVES (RM12N100LD)
Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 TYP. 0.114 TYP. L2 1.400 1.700 0.055 0.067 L3 1.600 TYP. 0.063 TYP. L4 0.600 1.000 0.024 0.039 /g301 1.100 1.300 0.043 0.051 /g537 e e e e h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP.
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