RM110N100BT2 RECTRON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

Advanced trench cell design Low Thermal Resistance Application Motor Drivers V DSS ≥100V DS(ON) ≦4.1mΩ@V GS =10V TO-220 Absolute Maximum Rating Symbol Parameter V DS V GS I D Condition T C =25℃ T C =70℃ V Drain-Source Voltage Continuous Drain Current 100 Pulsed Drain CurrentI DM P D T STG T J Operating Junction Temperature T C =25℃ T C =25℃ Symbol 150 V A A Storage Temperature Range Total Power Dissipation -55 to 150 300 Value Unit 110 Gate-Source Voltage ±20 A W EAS Single Pulse Avalanche Energy 300 mJ T J Operating Junction Temperature 150 DC-DC Converter R RM110N100BT2 Halogen-free Device Device Package Marking RM110N100BT2 110N100 Package Marking TO-220 2023-05/119 REV:B

Typ. Max -- 50.2 -- 0.6 Electrical Characteristics(T J =25℃,unless otherwise noted) Min Typ Max Unit 100 -- -- V 1.5 3.0 4.0 V -- -- 1 uA -- -- ±100 nA 3.5 m Ω Symbol Parameter R θJA Thermal Resistance-Junction to Ambient V GS(th) Static Characteristic Unit Limit ℃/W I DSS I GSS Symbol Parameter R θJc Thermal Resistance-Junction to Case Drain-Source Leakage Current BV DSS Drain-Source Breakdown Voltage V GS =10V I D =20A V GS =0V, I D =250uA V DS GS , I D =250uA V DS =100V, V GS =0V V GS =±20V, V DS =0V Gate Threshold Voltage Gate -Source Leakage Current m Ω -- 3.3 4.1 mΩ -- 5040 -- -- 900 -- -- 45 -- -- 31 -- -- 54 -- -- 70 -- -- 31 -- -- 65 -- -- 18 -- -- 9.7 -- -- -- 1.3 V -- 77 -- nS V SD Forward on voltage t rr Reverse Recovery Time Reverse diode Characteristic Qgd Gate-Drain Charge Qg Total Gate Charge Qgs Gate-Source Charge nC t d(on) t r Input Capacitance Output Capacitance Reverse Transfer CapacitanceC rss Turn-Off Fall Time Turn-On Delay Time V DS =50V,V GS =10V , R G =3Ω, I D =20A Gate Charge Characteristic nS R DS(ON) Static Drain-Source On-Resistance V GS =10V, I D =10A t d(off) t f Turn-off Delay Time C iss Dynamic Characteristic Turn-On Rise Time V DS =50V,V GS =0V,f=1MHz pFC oss V GS 10V, I D 20A I SD =20A, V GS =0V V R =0V,I F =20A, DI F /dt=100A/uS V DS =50V, V GS =10V, I D =50A -- 116 -- nCQ rr Reverse Recovery Charge R F F

VDS Drain to Source voltage (V) Tj Junction Temperature℃ Fig1 Typical Output Characteris Fig2 VGS(TH) Voltage and Temperature VGSth Gate to Source Voltage (V) ID Drain to Source Current (A) 120 150 02468 1 0 1 2 1 4 -20 0 20 40 60 80 100 120 120 ID=250uA VGS=10V VGS=9V VGS=7V VGS=6V VGS=5V ID Drain Current (A) VGS Gate-Source voltage (V) Fig3 On Resistance and Drain Current Vs Gate Voltage Fig4 Typical Transfer Characteristics VSD Source to Drain voltage (V) VSD Source to Drain voltage (V) Fig5 Typical Source toDrain Diode Forward Voltage Fig6 Maximum Safe Operating Area ID Drain to Source Current (A) 0 1 02 03 04 05 0 VGS=10V Rdson ON Resistance (m ohm) 100 120 0246 100 1000 00 . 511 . 52 ISD Reverse Drain Current (A) Tj=25 TJj=125 TJj=25 0.1 100 1000 0.1 1 10 100 ID Drain Current (A) DC 1ms 100us 10ms 10us Tj=125 RATIN G AND CHARACTERISTI CS CURVES (RM110N100BT2)

VDS Drain to Source voltage (V) Qg Total Gate Charge (nC) Fig7 Typical Capacitance and Drain Source Voltage Fig8 Typical Gate Charge and Gate Source Voltage C Capacitance (pF) VGS Gate to Source Voltage (V) 100 1000 10000 0 1 02 03 04 05 0 ciss coss crss 0 1 02 03 04 05 06 07 0 VDS=50V ID=50A VDS=50V RATIN G AND CHARACTERISTI CS CURVES (RM110N100BT2)

Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE