RM1002 RECTRON | Alldatasheet
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design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features /g445 High density cell design for ultra low Rdson /g445 Fully characterized avalanche voltage and current /g445 Excellent package for good heat dissipation Application /g445/g3Power switching application /g445/g3Hard switched and high frequency circuits /g445/g3Uninterruptible power supply Schematic diagram SOT-23 Absolute Maximum Ratings (T A =25/g263/g263/g263/g263unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 2 A Drain Current-Pulsed (Note 1) I DM 5 A Maximum Power Dissipation P D 1.1 W Operating Junction and Storage Temperature Range T J STG -55 To 150 /g263 Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R /g537JA 120 /W/g263 Electrical Characteristics (T A =25/g263unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250/g541A 100 110 - V Zero Gate Voltage Drain Current I DSS V DS =100V,V GS =0V - - 1 /g541A The 1002 uses advanced trench technology and D G S /g57 /g39/g54/g54 /g53 /g39/g54/g11/g50/g49/g12 /g44 /g39 /g20/g27/g24/g21/g36 10V @ (typ) /g525m100V Marking:1002 1002 RM1002 N-Channel Enhancement Mode Power MOSFET REV:A 2018-07/59 Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM1002V
Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250/g541 Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=1A - 185 220 m /g525 Forward Transconductance g FS V DS=5V,ID=1A 1 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 190 - PF Output Capacitance C oss - 22 - PF Reverse Transfer Capacitance C rss VDS=50V,VGS=0V, F=1.0MHz - 13 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 6 - nS Turn-on Rise Time t r - 10 - nS Turn-Off Delay Time t d(off) - 10 - nS Turn-Off Fall Time t f VDD=50V,ID=1.3A,RL=39/g525 VGS=10V,RG=1/g525 - 6 - nS Total Gate Charge Q g - 5.2 nC Gate-Source Charge Q gs - 0.75 - nC Gate-Drain Charge Q gd VDS=50V,ID=1.3A, VGS=10V - 1.4 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=1.3A - - 1.2 V Diode Forward Current (Note 2) I S - - 2 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t /g148 10 sec. 3. Pulse Test: Pulse Width /g148 300/g541s, Duty Cycle /g148 2%. 4. Guaranteed by design, not subject to production A 1.2 2.0 2.5 V
1/g709/g709/g709/g709EAS test circuit 2/g709/g709/g709/g709Gate charge test circuit 3/g709/g709/g709/g709Switch Time Test Circuit
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE