RM08P100S2 RECTRON | Alldatasheet

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V DS = -100V,ID =-1.1A RDS(ON) < 0.6Ω @ VGS=-10V RDS(ON) < 0.65Ω @ VGS=-4.5V RM08P100S2 Notes烉 * Surface Mounted on 1 in 2 pad area, t /g10010 sec ** Pulse width /g100300 /g80s, duty cycle /g1002% 2022-10/113 REV:A Symbol Parameter Conditions Min Max Unit VDS Drain-Source Voltage TA=25ȭ -100 - V VGS Gate-Source Voltage TA=25ȭ -± 2 0 V ID* Drain Current TA=25ȭ, VGS=-10V - -1.1 A TA=100ȭ, VGS=-10V - -0.73 A IDM*,** Pulsed Drain Current TA=25ȭ, VGS=-10V - -4.4 A Ptot Total Power Dissipation TA=25ȭ - 0.83 W Tstg Storage Temperature -55 150 ȭ TJ Junction Temperature - 150 ȭ IS Diode Forward Current TA=25ȭ - -1.1 A RθJA* Thermal Resistance-Junction to Ambient - 150 ȭ/W

Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage V GS=0V, IDS=-250μA -100 V VGS(th) Gate Threshold Voltage V DS=VGS, IDS=-250μA -1.0 - -2.5 V IDSS Drain Leakage Current VDS=-80V, VGS=0V - - -1 μA TJ=85ഒ -- - 3 0 μ A IGSS Gate Leakage Current V GS=±20V, VDS=0V - - ±100 nA RDS(ON)a On-State Resistance VGS=-10V, IDS=-1A - 500 600 P˖ VGS=-4.5V, IDS=-0.5A - 600 650 P˖ Diode Characteristics VSDa Diode Forward Voltage I SD=-1A, VGS=0V - - 1.3 V trr Reverse Recovery Time ISD=-1A, dlSD/dt=100A/μs -2 1-n s Qrr Reverse Recovery Charge - 17 - nC Dynamic Characteristics b Ciss Input Capacitance VGS=0V, VDS=-50V Frequency=1MHz - 363 - pFCoss Output Capacitance - 26 - Crss Reverse Transfer Capacitance - 1 - td(on) Turn-on Delay Time VDS=-50V, VGEN=-10V, RG=4.5Ω, RL=50Ω, IDS=-1A -6 . 8- ns tr Turn-on Rise Time - 20 - td(off) Turn-off Delay Time - 145 - tf Turn-off Fall Time - 48 - Gate Charge Characteristics b Qg Total Gate Charge VGS=-10V, VDS=-50V, IDS=-1A -1 8- nC Qgs Gate-Source Charge - 3.5 - Qgd Gate-Drain Charge - 2.2 - Notes: a. Pulse test; pulse width /g100300/g80s, duty cycle /g1002% b. Guaranteed by design, not subject to production testing

RATING AND CHARACTERISTICS CURVES (RM08P100S2) Power Capability Current Capability Ptot - Power (W) -ID - Drain Current (A) Tmp – Mounting Point Temp. (°C) Tmp – Mounting Point Temp. (°C) Safe Operation Area Transient Thermal Impedance -ID - Drain Current (A) Normalized Transient Thermal Resistance -VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TA=25 o C,VG= -10V 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 TA=25 o C 1E-4 1E-3 0.01 0.1 1 10 30 1E-3 0.01 0.1 Mounted on 1in pad R/g84JA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0.01 0.1 1 10 100 500 1E-3 0.01 0.1 100us 1msRds(on) Limit TA=25 o C 10ms 100ms DC 300us

RATING AND CHARACTERISTICS CURVES (RM08P100S2) Power Capability Current Capability Ptot - Power (W) -ID - Drain Current (A) Tmp – Mounting Point Temp. (°C) Tmp – Mounting Point Temp. (°C) Safe Operation Area Transient Thermal Impedance -ID - Drain Current (A) Normalized Transient Thermal Resistance -VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TA=25 o C,VG= -10V 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 TA=25 o C 1E-4 1E-3 0.01 0.1 1 10 30 1E-3 0.01 0.1 Mounted on 1in pad R/g84JA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0.01 0.1 1 10 100 500 1E-3 0.01 0.1 100us 1msRds(on) Limi t TA=25 o C 10ms 100ms DC 300us

RATING AND CHARACTERISTICS CURVES (RM08P100S2) Output Characteristics On Resistance -ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) Normalized Threshold Voltage -VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS = - 250/g80A 200 400 600 800 1000 1200 1400 -10 -3V -2V 0 - 2- 4- 6- 8 560 580 600 620 640 660 680 700 720 740 VGS= - 4.5V VGS= -10V

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