RM009 SKYWORKS | Alldatasheet
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Data Sheet Skyworks Solutions, Inc. Proprietary 101258B © 1999–2002, Skyworks Solutions, Inc., All Rights Reserved. July 26, 2002 RM009 Power Amplifier Module for Dual-band GSM900 DCS1800 The RM009 is a dual-band Power Amplifier Module (PAM) designed in a compact form factor for Class 4 GSM900 and Class 1 DCS1800 cellular handsets. The module consists a GSM900 PA block and a DCS1800 PA block, matching circuitry for 50 Ω input and output impedances, and bias control circuitry. Two separate Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated on a single Gallium Arsenide (GaAs) die. One PA block operates in the GSM900 band and the other supports the DCS1800 band. The PAM is optimized for three-cell operation with both PAs sharing common power supply pins to distribute current. A custom CMOS integrated circuit contains a current amplifier that minimizes the required power control current (I APC) to 60 µA, typical. RF input and output ports are internally matched to 50Ω to reduce the number of external components for a dual-band design. Switching circuitry receives the band select signal on the band select pin (BS) to switch between GSM (logic 0) and DCS (logic 1). Analog Power Control (APC) controls the output power of each PA selected by the band select signal. The extremely low leakage current (2 µA, typical) of the RM009 dual-band module maximizes handset standby time. The functional block diagram shows the relationship of the dual PAs and the CMOS device in the RM009. Functional Block Diagram CMOS Bias Controller GSM IN GSM OUT DCS IN DCS OUT Power Control Band Select HBT Match MatchMatch Match Distinguishing Features
- High efficiency GSM 54% DCS 45% Input/output matching 50 Ω internal Small outline 9.1 mm x 11.6 mm Low profile 1.50 mm ±10% Low APC current 60 µA
Applications
Class 4 GSM900 and Class 1 DCS1800 dual-band cellular handsets
operating conditions and Table 3 shows the electrical characteristics. Table 1. Absolute Maximum Ratings Table 2. Recommended Operating Conditions Table 3. RM009 Electrical Specifications (1 of 2)
Table 3. RM009 Electrical Specifications (2 of 2)
Figure 1. Typical RM009 Application Place caps at closest proximity to PA module with the capacitor ground directly connected to the PAM grounds. Optional depending on PAC circuit.
Figure 2. RM009 PAM Package Dimensions—16-Pin Leadless Module (All Views)
0.762 Typ
1.02 Typ
0.127 Ref
- All contact points are gold plated, lead free-surfaces.
- All dimensions are in millimeters.
Figure 3. RM009 Pin Configuration — 16-Pin Leadless Module (Top View) Table 4. RM009 Signal Description
1 GND Ground 9 GND Ground
2 DCS IN RF input to DCS PA (DC coupled) 10 GSM OUT GSM RF output (DC coupled)
3 GND Ground 11 GND Ground
4 GSM IN RF input to GSM PA 12 DCS OUT DCS RF output (DC coupled)
5 GND Ground 13 GND Ground
6 VCC1 Power supply for PA driver stages/
14 APC Analog Power Control
7 GND Ground 15 GND Ground
8 VCC2 Power supply for PA output stages 16 BS Bandselect
absorption may occur when the part is subjected to high temperature during solder assembly. Figure 4. Typical Case Markings
performed in compliance with MIL-STD-883E Method 3015.7 using the Human Body Model. marked > 2000 V pass 2000 V ESD stress. fails devices as soon as the pin begins to show any degradation on a curve tracer. test areas follow the Class-1 ESD handling precautions listed in Table 5. Figure 6. ESD Sensitivity Areas (Top view) Table 5. Precautions for GaAs ICs with ESD Thresholds Greater Than 200 V But Less Than 2000 V
considerations will be discussed later in this section. Select, V oltage Clamp, and Current Buffer. The functional block diagram is shown in Figure 7.
- Please refer to 3GPP TS 05.05, Digital Cellular Communications System (Phase 2+); Radio Transmission and Reception. All GSM
Figure 7. Functional Block Diagram
or disable the P A. This feature helps minimize battery discharge when the P A is in standby mode. battery current (ICC) to 6 µA, typical, under nominal conditions. the APC input at or above the enable threshold level with a timing at least 8 µsec prior to ramp-up. Band Select input (pin 16) will determine the active path of the bias output to the GaAs die. Figure 8. Base Bias Voltage vs. APC Input, VCC = 4.0 V
of less than 8 µsec for a 1.5 V ramp. comply with 3GPP specifications. Figure 9. Base Bias Clamp Voltage vs. Supply Voltage
RM009 Technical Information Power Amplifier Module for Dual-band GSM900 DCS1800 Applications 101258B Skyworks Solutions, Inc. Proprietary 13 July 26, 2002 requirement to limit the edge rate of output power transitions of the mobile. Switching transients are caused by the transition from minimum output power to the desired output power, and vice versa. The spectrum generated by this transition is due to the ramping waveform amplitude modulation imposed on the carrier. Sharper transitions tend to produce more spectral "splatter" than smooth transitions. If the transmit output power is ramped up too slowly, the radio will violate the time mask specification. In this condition, the radio may not successfully initiate or maintain a phone call. If the transmit output power is ramped up too quickly, this will cause RF "splatter" at certain frequency offsets from the carrier as dictated by the 3GPP specification. This splatter, known as Output RF Spectrum (ORFS) due to Switching Transients, will increase the system noise level, which may knock out other users on the system. The main difficulty with TDMA power control is allowing the transmitter to ramp the output power up and down gradually so switching transients are not compromised while meeting the time mask template at all output power levels in all operational bands. The transmitter has 28 µsec to ramp up power from an off state to the desired power level. The GSM transmitter power control loop generally involves feedback around the GaAs P A, which limits the bandwidth of signals that can be applied to the P A bias input. Since the PA is within the feedback loop, its own small-signal frequency response must exhibit a bandwidth 5 to 10 times that of the power control loop. As discussed in the previous section, the P A bias is held at ground for inputs less than 700mV . As the APC input exceeds the enable threshold, the bias will activate. After an 8 µs delay, the amplifier internal bias will quickly ramp to match the ramp voltage applied to the VAPC input. Since the bias must be wide band relative to the power control loop, the ramp will exhibit a fast edge rate. If the APC input increases beyond 1V before the 8 µs switching delay is allowed to occur after the bias is enabled, the P A will have significant RF output as the internal bias approaches the applied bias. During this ramp, the internal power control is running "open loop" and the edge rates are defined by the frequency response of the P A bias rather than that of the power control loop. This open loop condition will result in switching transients that are directly correlated to the P A bias bandwidth. Application of an initial APC voltage, which enables the bias at least 8 µs before the VAPC voltage is ramped, will ensure that the internal bias of the P AM will directly follow the applied VAPC. As a result, the power control loop will define all edge transitions rather than the PA internal bandwidth defining the transition. Figures 10 and 11 show the relationship of the internal bias relative to the applied APC in two cases. One case has ramping starting from ground; the other case has ramping starting with an initial enable pedestal of 700 mV . It is evident that the pedestal level is critical to ensure a predictable and well behaved power control loop. To enable the CMOS driver in the P AM prior to ramp-up, a P AC output pedestal level to the APC input of the P AM (pin 14) should be set to about 700 mV . This pedestal level should have a duration of at least 8 µsec directly prior to the start of ramp up. Figure 12 shows typical signals and timings measured in a GSM transmitter power control loop. This particular example is at GSM Power Level 5, Channel 62. The oscilloscope traces are TxVCO_enable, P AC_enable, DAC Ramp, and VAPC (pin 14). NOTE: When the TxVCO is enabled, the pedestal becomes set at the APC input of the P AM, then the P AC is enabled, and finally the DAC ramp begins. The device specifications for enable threshold level and switching delay are shown in Table 3.
Figure 12. GSM Transmitter - Typical Ramp-up Signals
© 2001, 2002, Skyworks Solutions, Inc. All Rights Reserved. Information in this document is provided in connection with Skyworks Solutions, Inc. ("Skyworks") products. These materials are provided by Skyworks as a service to its customers and may be used for informational purposes only. Skyworks assumes no responsibility for errors or omissions in these materials. Skyworks may make changes to its products, specifications and produc t descriptions at any time, without notice. Skyworks makes no commitment to update the information and shall have no responsibili ty whatsoever for conflicts, incompatibilities, or other difficulties arising from future changes to its products and product desc riptions. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Exce pt as may be provided in Skyworks' Terms and Conditions of Sale for such products, Skyworks assumes no liability whatsoever. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF SKYWORKS™ PRODUCTS INCLUDING WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY , PERFORMANCE, QUALITY OR NON-INFRINGEMENT OF ANY PATENT , COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. SKYWORKS FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT , GRAPHICS OR OTHER ITEMS CONT AINED WITHIN THESE MATERIALS. SKYWORKS SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS THAT MAY RESULT FROM THE USE OF THESE MATERIALS. Skyworks™ products are not intended for use in medical, lifesaving or life-sustaining applications. Skyworks' customers using or selling Skyworks™ products for use in such applications do so at their own risk and agree to fully indemnify Skyworks for any damages resulting from such improper use or sale. The following are trademarks of Skyworks Solutions, Inc.: Skyworks ™ , the Skyworks symbol, and "Breakthrough Simplicity" ™ . Product names or services listed in this publication are for identification purposes only, and may be trademarks of third parti es. Third- party brands and names are the property of their respective owners. Additional information, posted at www.skyworksinc.com, is incorporated by reference.
Ordering Information
Revision History
References: Application Note: PCB Design and SMT Assembly/Rework, Document Number 101762 JEDEC Standard J–STD–020A Model Number Manufacturing Part Number Product Revision Package Operating Temperature RM009 RM009-19 19 –30 °C to +85 °C Revision Level Date Description A June 2001 Initial Release B February 26, 2003 Add: Packaging and Handling Information section, Technical Information Section Revise: Table 3
General Information: Skyworks Solutions, Inc. 4311 Jamboree Rd. Newport Beach, CA. 92660-3007 www.skyworksinc.com