RM003N600ES2 RECTRON | Alldatasheet
Document overview
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Technical content
The RM003N600ES2 is an enhancement N-channel mode Power FET, it uses advanced tec hnology to provide customers ultra high switching speed and ultra low gate charge. * RDS(ON) /g148 600/g525 @ VGS= 4.5V, ID=0.016A RDS(ON) /g148 500/g525 @ VGS=10V, ID=0.016A * Ultra Low Gate Charge (Typical 140nC) * Ultra High Switching Speed Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Q uantity 127ZG 3000 units SOT23 Ø180mm 8 mm RM003N600ES2 RM003N600ES2 Schematic diagram General Features
Description
- Halogen-free Absolute Maximum Ratings (TA=25ćunless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±20 V TA=25°C 0.03 A Continuous TA=70°C ID
0.02 A Drain Current
Pulsed (TA=25°C) I DM 0.09 A Peak Diode Recovery dv/dt dv/dt 6 kV/μs Power Dissipation (TA=25°C) P D 0.3 W Junction Temperature T J -55 ~ +150 °C Storage Temperature Range T STG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. ġ Absolute maximum ratings are stress ratings only and functional device operation is not implied.ġ 2020-11/82 REV:O N-Channel Enhancement Mode Power MOSFET
PARAMETER SYMBOL RATINGS UNIT JunctionġtoġAmbient R /g537JA 325 °C/W PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS ID=250μA, VGS=0V 600 V Forward V GS=+20V, VDS=0V +10 /g541AGate-Source Leakage Current Reverse IGSS VGS=-20V, VDS=0V -10 /g541A VGS=0V, VDS=600V, TJ=25°C 0.1 μADrain-Source Leakage Current I D(OFF) VGS=0V, VDS=600V, TJ=150°C 10 μA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) VDS=VGS, ID=8μA 1.4 2.6 V VGS=4.5V, ID=0.016A 280 600 /g159 Static Drain-Source On-State Resistance R DS(ON) VGS=10V, ID=0.016A 260 500 /g159 DYNAMIC PARAMETERS Input Capacitance C ISS pF Output Capacitance C OSS 6.2 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 1.8 pF SWITCHING PARAMETERS Total Gate Charge Q G nC Gate to Source Charge Q GS 0.6 nC Gate to Drain Charge Q GD VGS=0~10V, VDS=480V, ID=0.01A 0.15 nC Turn-ON Delay Time t D(ON) 6.1 ns Rise Time t R 9.7 ns Turn-OFF Delay Time t D(OFF) ns Fall-Time t F VDD=300V, VGS=10V, ID=0.01A, RG=6/g159 115 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS TA=25°C 0.016 A Maximum Pulsed Drain-Source Diode Forward Current ISM TA=25°C 0.09 A Drain-Source Diode Forward Voltage V SD IF=0.016A, VGS=0V, TJ=25°C 1.2 V Body Diode Reverse Recovery Time t rr 220 ns Body Diode Reverse Recovery Charge Q rr VR=30V, IF=0.016A, dIF/dt=100A/μs 0.14 μC Notes: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width /g148 300μs, Duty Cycle /g148 2.0%. Thermal Characteristic Electrical Characteristics (TA=25ćunless otherwise noted)
RATING AND CHARACTERISTICS CURVES (RM003N600ES2)
- All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 /g537 0° 8°
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures. DISCLAIMER NOTICE