RLTPGB20N60CT GWSEMI | Alldatasheet

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Technical content

Vcesat-typ（Vge=15V）

APPLICATIONS

FEATURES

 Low gate charge  Trench FS Technology,  Saturation voltage: VCE(sat), typ = 1.85V IC = 20A and TC = 25° C 600V 1.85V 20A ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value Unit Collector-Emmiter Voltage Vces 600 V Collector Current-continuous IC 40(TC=25°C ) A 20(TC=100°C ) A Collector Current – pulse (note 1) ICM 60 A Diode RMS forward current IF 20(TC=100°C ) A Surge non repetitive forward current tp= 10 ms sinusoidal IFSM A Gate-Emmiter Voltage VGES ± 30 V *Collector current limited by maximum junction temperature Power Dissipation PD TC=25℃ W Storage Temperature Range TSTG -40～+150 ℃ Junction Temperature Range TJ -40～+150 ℃ Maximum Lead Temperature for Soldering Purposes TL 285 ℃ Notes: Pulse width limited by maximum junction temperature

ELECTRICAL CHARACTERISTICS

I C =250 μ A, V GE =0V V Zero Gate Voltage Collector Current I CES V CE =1200V, V GE =0V, T C =25 0.1 mA Gate body leakage current, forward IGESF VCE=0V, V GE =30V 100 nA Gate body leakage current, reverse IGESR VCE=0V, V GE =-30V 100 nA On Characteristics Gate Threshold Voltage VGE(th) VCE = VGE , IC=250μA 4.5 6.5 V Collector Emmiter saturation Voltage V CESAT V GE =15V I C =20 A Tc=25 1.85 2.3 V Dynamic Characteristics Input capacitance C ies V CE =25V, V GE =0V, f=1.0MH Z 920 pF Output capacitance C oes 150 Reverse transfer capacitance C res Total Gate Charge Qg V C C 300 V,I c 20A V G E 15 V T C =25 nC Gate to emitter charge Qge Gate to collector charge Qgc t d (on) VCC=400V,Ic=20A,RG=20Ω VGE=15 V, Inductiv e L oad TC=25℃ ns Turn On rise time t r ns Turn Off delay time t d (off) ns Turn Off Fall time t f ns Turn On energy Eon 0.43 m J Turn off energy Eoff 0.29 m J Total switching energy Eto t m J Anti Parallel Diode Characteristics and Maximum Ratings Drain Source Diode Forward Voltage V F V GE =0V, I S A V Diode Reverse recovery time t rr V GE =0V, V R 00V I F A dI F /dt=500A/ μ s T C =25 ns Diode Reverse recovery charge Qrr 732 nC Diode Reverse recovery Current I RRM A Parameter Symbol MAX Unit Junction to Case IGBT R th(j 2.1 Junction to Case diode R th(j 3.4 Junction to Ambient R th(j

H G F C P A B E D K J L 2-R0.5 Max 4.2mm R