RLT904-20G ETC | Alldatasheet
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ROITHNER LASERTECHNIKROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT904-20G TECHNICAL DATA High Power Infrared Laserdiode Structure: GaAlAs double heterostructure Lasing wavelength: 904 nm typ., singlemode Max. optical power: 20 mW Package: 9 mm PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL RATING UNIT Optical Output Power Po 25 mW LD Reverse Voltage VR(LD) 2 V PD Reverse Voltage VR(PD) 30 V Operating Temperature TC -60 .. +60 °C Storage Temperature TSTG -70 .. +85 °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT Threshold Current Ith cw 120 140 160 mA Operation Current Iop Po = 20 mW 175 190 mA Operation Voltage Uop Po = 20 mW 2.2 V Lasing Wavelength λp Po = 20 mW 890 904 910 nm Beam Divergence θ// Po = 20 mW 7 10 13 ° Beam Divergence θ⊥ Po = 20 mW 15 30 35 ° Monitor Current Im Po = 20 mW 0.6 1 1.2 mA NOTE! LASERDIODE MUST BE COOLED!