RLT6505G ETC1 | Alldatasheet
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ROITHNER LASERTECHNIKROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT6505G TECHNICAL DATA Visible Wavelength Laserdiode Structure: AlGaInP, index guided, single transverse mode Lasing wavelength: 650 nm Max. optical power: 5 mW Package: 9 mm G or 5.6mm MG PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL RATING UNIT Optical Output Power Po 5 mW LD Reverse Voltage VR(LD) 2 V PD Reverse Voltage VR(PD) 30 V Operation Case Temperature TC -10 .. +40 °C Storage Temperature TSTG -40 .. +85 °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT Optical Output Power Po kink free 5 mW Threshold Current Ith 20 30 40 mA Operation Current Iop Po =5mW 45 70 mA Operating Voltage Vop Po =5mW 2.2 2.7 V Lasing Wavelength l p Po =5mW 650 655 nm Beam Divergence q 1 Po =5mW 5 8 11 ° Beam Divergence q 2 Po =5mW 25 31 37 ° Astigmatism As Po =5mW, NA=0.4 11 µm Monitor Current Im Po =5mW, Vr=5V 10 µA