RLS245 DGNJDZ | Alldatasheet
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Silicon Epitaxial Planar High Voltage Switching Diode Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage V RM 250 V Reverse Voltage V R 220 V Average Rectified Forward Current I F(AV) 200 mA Maximum Forward Current I FM 625 mA Surge Forward Current at t < 1 s and T j = 25 oC I FSM 1000 mA Junction Temperature T j 175 OC Storage Temperature Range T stg - 65 to + 175 OC Characteristics at T a = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 200 mA VF - 1.5 V Leakage Current at VR = 220 V IR - 10 μA Reverse Breakdown Voltage at IR = 100 μA VBR 250 - V Capacitance at VF = VR = 0, f = 1 MHz Ctot - 3 pF Reverse Recovery Time from IF = IR = 20 mA trr - 75 ns LL-34 RLS245 !!!
!! !!Electrical characteristic curves (T a=25°C) 25˚C−25˚C 0.5 100 200 Ta=125˚C FORWARD CURRENT : IF (mA) FORWARD VOLTAGE : VF (V) Fig. 1 Forward characteristics REVERSE VOLTAGE : VR (V) Fig. 2 Reverse characteristics 100˚C 75˚C 50˚C Ta=25˚C 50 100 150 200 250 300 35010n 100n 10µ REVERSE CURRENT : IR (A) 1.1 1.0 0.9 0.8 0.7 0.6012345 REVERSE VOLTAGE : VR (V) CAPACITANCE BETWEEN TERMINALS : CT (pF) Fig. 3 Capacitance between terminals characteristics IR=10mA 140 120 100 0 5 1 01 52 02 53 03 5 I rr=1mA REVERSE RECOVERY TIME : trr (ns) FORWARD CURRENT : IF (mA) Fig. 4 Reverse recovery time characteristics Fig.5 Surge current characteristics 0 1 10 100 1000 SURGE CURRENT : Isurge (A) PULSE WIDTH : Tw (ms) PULSE GENERATOR OUTPUT 50Ω SAMPLING OSCILLOSCOPE50Ω 0.01µF D.U.T. 5kΩ Fig. 6 Reverse recovery time (trr) measurement circuit RATING AND CHARACTERISTIC CURVES (RLS245)