RLPGB15N120CT GWSEMI | Alldatasheet
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1200V,15A VCE (sat)(typ.)=2.2V@VGE=15V,IC=15A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Absolute Maximum Ratings Symbol Parameter Value Units VCES Col lector-Emitter Voltage 1200 V VGES G ate-Emitter Voltage + 20 V IC Cont inuous Collector Current ( TC=25 ℃) 30 A Cont inuous Collector Current ( TC=100℃) 15 A ICM P ulsed Collector Current (Note 1) 45 A IF Di ode Continuous Forward Current ( TC=100 ℃) 15 A IFM Di ode Maximum Forward Current (Note 1) 45 A tsc S hort Circuit Withstand Time 10 us PD Ma ximum Power Dissipation ( TC=25 ℃) 180 W Ma ximum Power Dissipation ( TC=100℃) 70 W TJ O perating Junction Temperature Range -55 to +150 ℃ TSTG S torage Temperature Range -55 to +150 ℃ Th ermal Characteristics Symbol Parameter Max. Units Rth j-c Thermal Resistance, Junction to case for IGBT 0.68 ℃/ W Rth j-c Thermal Resistance, Junction to case for Diode 0.98 ℃/ W Rth j-a Thermal Resistance, Junction to Ambient 40 ℃/ W RLPGB 15N120CT IGBT TO-247
Electrical Characteristics (TC=25 unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units BV CES Collector-Emitter Breakdown Voltage V GE = 0V, I C = 250uA 1200 V I CES Collector -Emitter Leakage Current V CE = 1200V, V GE = 0V 250 uA I GES Gate Leakage Current, Forward V GE =30V, V CE = 0V 100 nA Gate Leakage Current, Reverse V GE = -30V, V CE = 0V -100 nA V GE(th) Gate Threshold Voltage V GE = V CE I C = 250uA V V CE(sat) Collector-Emitter Saturation Voltage V GE =15V, I C = 15A 2.2 2.7 V Q g Total Gate Charge VCC=960V VGE=15V IC=15A nC Q ge Gate-Emitter Charge nC Q gc Gate-Collector Charge nC t d(on) Turn-on Delay Time VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 ns t r Turn-on Rise Time ns t d(off) Turn-off Delay Time 260 ns t f Turn-off Fall Time 135 ns Eon Turn-on Switching Loss 1.3 mJ Eoff Turn-off Switching Loss 0.9 mJ Ets Total Switching Loss 2.2 mJ C ies Input Capacitance VCE=25V VGE=0V f = 100kHz 550 pF C oes Output Capacitance 180 pF C res Reverse Transfer Capacitance 110 pF Electrical Characteristics of Diode (TC=25 unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units V F Diode Forward Voltage I F =15A 2.3 2.8 V t r r Diode Reverse Recovery Time V CE = 600V I F = 15A dI F /dt = 400A/us - 240 ns I r r Diode peak Reverse Rec overy Current - 13 A Q r r Diode Reverse Recovery Charge - 2000 nC Notes： 1. Repetitive Rating: Pulse width limited by maximum junction temperature RLPGB 15N120CT IGBT
Typical Performance Characteristics Figure1:maximum DC collector current Figure2:power dissipation VS. case temprature VS. case temprature Figure3:reverse bias SOA,TJ=150℃,VGE=15V Figure4:forward SOA,TC=25℃,TJ≤150℃ RLPGB 15N120CT IGBT Fi gure5:typical IGBT output characteristics, Figure6:typical trans characteristics,VCE=20V,tp=20us TJ=25℃;tp=300us
Figure7: typical VCE VS. VGE,TJ=25℃ Figure8:typical diode forward characteristic,tp=300us RLPGB 15N120CT IGBT Figure9: typical energy loss VS. IC, TC=25℃, Figure10: typical switching time VS. IC, TC=25℃, L=500uH, VCE=600V,VGE=15V,Rg=28Ω L=500uH, VCE=600V,VGE=15V,Rg=28Ω Figure11: typical energy loss VS. Rg,TC=25℃, Figure12: typical switching time VS. Rg,TC=25℃, L=500uH, VCE=600V, VGE=15V,IC=15A L=500uH,VCE=600V,VGE=15V,IC=15A
Figure13: typical diode IRR VS. IF, TC=25℃ Figure14:typical diode IRR VS. dIF/dt VCC=600V, VGE=15V VCC=600V,VGE=15V Figure15:typical diode QRR VS. dIF/dt Figure16:typical diode TRR VS. dIF/dt, VCC=600V,VGE=15V VCC=600V,VGE=15V Figure17:typical capacitance VS. VCE,VGE=0V,f=100kHz Figure18:typical gate charge VS. VGE,IC=15A Figure19:normalized transient thermal impedance, junction-to-case Note1.Duty factor D=t1/t2; Note2:peak TJ=PDM×Zthjc+TC