RLFGB20N60CT GWSEMI | Alldatasheet

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Technical content

VCESAT-typ（VGE=15V） 1.6V RLFGB 20N60CT N-CHANNEL IGBT

FEATURES

 Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ = 1.6V,IC= 20A and TC = 25°C

APPLICATIONS

 General purpose inverters  UPS ABSOLUTE RATINGS (Tc=25°C) *Collector current limited by maximum Junction temperature Parameter Symbol Value Unit Collector-Emmiter Voltage VCES 600 V 40 (TC=25°C ) A 20( TC=100°C ) A Collector Current – pulse （note 1） ICM Diode RMS forward current IF 40(TC=25°C ) A20(TC=100°C ) Surge non repetitive forward current tp= 10 ms sinusoidal IFSM 80 A Gate-Emmiter Voltage VGES ±20 V Turn-off safe area - 80 A Power Dissipation PD TC=25°C 35 W Storage Temperature Range TSTG -55～+150 °C Operating Temperature Range TJ -55～+175 Maximum Lead Temperature for Soldering Purposes TL 300 IC Collector Current-continuous ITO-220

ELECTRICAL CHARACTERISTICS

Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics Collector-Emmiter Voltage BVCES IC=500μA, VGE=0V 600 - - V Breakdown Voltage Temperature Coefficient ΔBVCES/ΔTJ IC=1mA, referenced to 25°C - 0.5 - V/°C Zero Gate Voltage Collector Current ICES VCE=600V, VGE=0V, TC=25°C - - 10 μA Gate-body leakage current, forward IGESF VCE=0V, VGE =20V - - 200 nA Gate-body leakage current, reverse IGESR VCE=0V, VGE =-20V - - -200 nA On-Characteristics Gate Threshold Voltage VGE(th) VCE= VGE,IC=250μA 4.5 - 6.5 V Collector-Emmiter saturation Voltage VCESAT VGE=15V,IC=20A, Tc=25°C - 1.7 2.1 VGE=15V,IC=20A, Tc=125°C 1.80 2.20 V VGE=15V,IC=20A, Tc=175°C 1.85 2.35 Dynamic Characteristics Input capacitance Cies VCE=25V,VGE=0V, f=1.0MHZ,TC=25°C - 1500 - Output capacitance Coes - 128 - pF Reverse transfer capacitance Cres - 28.7 - Total Gate Charge Qg VCC=400V,IC=20A,RG=1 0Ω,VGE=15V,TC=25°C - 43.9 - nC Gate to emitter charge Qge - 10.0 - Gate to collector charge Qgc - 18.9 - Gate resistance Rg f=1MHz,open collector - 1.8 - Ω short current Isc VGE=15V,VCE=360V, TJstart≤150°C,t≤10µs - 116.7 - A RLFGB 20N60CT

Parameter Symbol Tests conditions Min Typ Max Units Turn-On delay time td(on) VCC=400V,ICC=20A, RG=10Ω, VGE=15V, TC=25°C - 16 - ns Turn-On rise time tr - 56 - Turn-Off delay time td(off) - 52 - Turn-Off Fall time tf - 82 - Turn-On energy Eon - 0.79 - Turn-off energy Eoff - 0.3 - mJ Total switching energy Etot - 1.09 - Turn-On delay time td(on) VCC=400V,IC=20A, RG=10Ω,VGE=15V, TC=175°C - 14.0 - Turn-On rise time tr - 54.0 - Turn-Off delay time td(off) - 76.0 - Turn-Off Fall time tf - 146.0 - Turn-On energy Eon - 0.8 - Turn-off energy Eoff - 0.49 - Total switching energy Etot - 1.3 - Anti-Parallel Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VF VGE=0V, IF=20A,TC=25°C - 1.4 - VGE=0V, IF=20A,TC=125°C - 1.2 - V VGE=0V, IF=20A,TC=175°C - 1.0 - Diode Reverse recovery time trr TC=25°C,IF=20A, VGE=0V,di/dt =100A/us - 254 - ns Diode Reverse recovery charge Qrr - 347 - nC Diode Reverse recovery Current Irrm - 2.7 - A Diode Reverse recovery time trr TC=175°C, IF=20A, VGE=0V,di/dt=100A/us - 429 - ns Diode Reverse recovery charge Qrr - 1010 - nC Diode Reverse recovery Current Irrm - 4 - A ns mJ Parameter Symbol max Unit （IGBT） Thermal Resistance, Junction to Case Rth(J-C) 3.57 °C/W （FRD） Thermal Resistance, Junction to Case Rth(J-C) 7.7 °C/W Thermal Resistance, Junction to Ambient Rth(J-A) 62.5 °C/W RLFGB 20N60CT

Output Characteristics TJ=25°C Output Characteristics TJ=175°C Transfer characteristics VCE=6V BVCE TJ IC VS TC VS VGE TJ VS VCESAT vs TJ VCESAT vs I C RLFGB 20N60CT

Capacitance Characteristic VGE=0V,f=1.0MHZ SwitchingTime vs. IC TJ=25°C,VGE=15V,VCE=400V,Rg=10Ω SwitchingTime vs. IC TJ=175°C,VGE=15V,VCE=400V,Rg=10Ω Qg VS VGE Switching Loss vs. IC TJ=25°C,VGE=15V,VCE=400V,Rg=10Ω Switching Time vs. TJ SwitchingTime vs. Rg TJ=25°C,VGE=15V,VCE=400V,IC=20A SwitchingTime vs. Rg TJ=175°C,VGE=15V,VCE=400V,IC=20A RLFGB 20N60CT 100 1000 10000 0.1 1 10 100 Capaditance (pF) VCE (V)

Switching Loss vs. IC TJ=175°C,VGE=15V,VCE=400V,Rg=10Ω Switching Loss vs. Rg TJ=25°C,VGE=15V,VCE=400V,IC=20A Switching Loss vs. Rg TJ=175°C,VGE=15V,VCE=400V,IC=20A Switching Loss vs. TJ VGE=15V,VCE=400V,IC=20A Rg=10Ω Switching Loss vs. VCE(V) TJ=175°C,VGE=15V,IC=20A,Rg=10Ω Safe Operating Area PD VS temperature Diode Characteristic RLFGB 20N60CT

Normalized Maximum Transient Thermal Impedance for IGBT VS VS RLFGB 20N60CT