RLF7N65CT GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
Features
VDS=650V, ID=7A RDS(ON)=1.1Ω@VGS=10V(Typ.) High Power and current handing capability Lead free product is acquired Main Applications Battery Protection Load Switch Power Management Absolute Maximum Ratings (T Ambient =25º C unless noted otherwise) Symbol
Description
V DS Drain Source Voltage Volt V GS Gate Source Voltage Volt I D Drain Current Continuous T C =25 Amp T C 4.0 I DM Drain Current Pulsed (Note 1) Amp P D Maximum Power Dissipation T C =25 Watt E AS Repetitive Avalanche Energy 435 mJ T J Operating Temperature Range 55 to +150 T STG Storage Temperature Range 55 to +150 Thermal Characteristic Symbol R θJA Thermal Resistance, Junction to Ambient 62.5
Electrical Characteristics (T Ambient =25º C unless noted otherwise) Symbol Parameters Conditions M in. Typ. Max. Unit Off Characteristics BV DSS Drain Source Breakdown Voltage V GS =0V, I D =250μA Volt I DSS Zero Gate Voltage Drain Current V DS V, V GS =0V μ A I GSS Gate Body Leakage Current V GS V, V DS =0V n A On Characteristics(Note 3) V GS(th) Gate Threshold Voltage V DS = V GS , I D =250μA Volt R DS(ON) Drain Source On State Resistance V GS V, I D A Ω Dynamic Characteristics(Note 4) C iss Input Capacitance V D D V V GS =0V , F =1MHz 592 1001 pF C oss Output Capacitance pF C rss Reverse Transfer Capacitance pF Switching Characteristics(Note 4) td(on) Turn on Delay Time V DD V, I D A R G Ω nS tr Turn on Rise Time nS td(off) Turn Off Delay Time nS tf Turn Off Fall Time nS Q g To tal Gate Charge V D S V, I D A V GS V nC Q gs Gate Source Charge nC Q gd Gate Drain Charge nC Drain Source Diode Characteristics V SD Diode Forward Voltage (Note 3) V GS =0V, I S A V I SM Pulse Diode Forward Current A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface mounted on FR4 Board, t≤10 sec 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 4. Guaranteed by design, not subject to production RLF7N65CT N-Channel Enhancement MOSFET
-100 Drain-Source Breakdown Voltage, BV DSS (Normalized) Junction Temperature , T J (¥) -50 50 200 100 150 1.2 1.1 1.0 0.9 0.8 Note: 1. V GS =0V 2. I D =250µA Breakdown Voltage Variation vs. Temperature -100 Drain-Source On-Resistance, R DS(ON) (Normalized) Junction Temperature , T J (¥) -50 50 200 100 150 3.0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. V GS =10V 2. I D =3.5A 0.1 Drain-Source Voltage , V DS (V) Drain Current, I D (A) 100 101 100µs 1000 10ms 1ms DC Operation in This Area is Limited by R DS (ON) Maximum Safe Operating Area Drain Current, I D (A) Case Temperature , T C (¥) 100 1255025 Maximum Drain Current vs . Case Temperature Notes: 1. T J =25¥ 2. T J =150¥ 3. Single Pulse 150 100.1 1 Drain-to-Source Voltage , V DS (V) Drain Current, I D (A) On-State Characteristics 0.1 Gate-Source Voltage , V GS (V) Drain Current, I D (A) Transfer Characteristics 468 1 0 150¥ Notes: 1. V DS =50 V 2. 250µs Pulse Test 0.1 25¥ Notes: 1. 250µs Pulse Test 2. T C =25¥ V GS Top : 10 V 7.5V 6. 5 V 6 V 5. 5 V Bottorm:5 .5V Typical Electrical and Thermal Characteristics RLF7N65CT N-Channel Enhancement MOSFET
-100 Drain-Source Breakdown Voltage, BV DSS (Normalized) Junction Temperature , T J (¥) -50 50 200 100 150 1.2 1.1 1.0 0.9 0.8 Note: 1. V GS =0V 2. I D =250µA Breakdown Voltage Variation vs. Temperature -100 Drain-Source On-Resistance, R DS(ON) (Normalized) Junction Temperature , T J (¥) -50 50 200 100 150 3.0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. V GS =10V 2. I D =3.5A 0.1 Drain-Source Voltage , V DS (V) Drain Current, I D (A) 100 101 100µs 1000 10ms 1ms DC Operation in This Area is Limited by R DS (ON) Maximum Safe Operating Area Drain Current, I D (A) Case Temperature , T C (¥) 100 1255025 Maximum Drain Current vs . Case Temperature Notes: 1. T J =25¥ 2. T J =150¥ 3. Single Pulse 150 100.1 1 Drain-to-Source Voltage , V DS (V) Drain Current, I D (A) On-State Characteristics 0.1 Gate-Source Voltage , V GS (V) Drain Current, I D (A) Transfer Characteristics 468 1 0 150¥ Notes: 1. V DS =50 V 2. 250µs Pulse Test 0.1 25¥ Notes: 1. 250µs Pulse Test 2. T C =25¥ V GS Top : 10 V 7.5V 6. 5 V 6 V 5. 5 V Bottorm:5 .5V Typical Electrical and Thermal Characteristics RLF7N65CT N-Channel Enhancement MOSFET
N-Channel Enhancement MOSFET ITO-220 PACKAGE OUTLINE Min. Typ. Max. Ref. L e E D c A 6.40 9.73 15.30 15.25 0.35 0.70 2.50 2.30 4.42 12.98 9.80 2.54 7.00 10.36 16.30 16.25 0.65 1.47 0.90 3.10 2.80 5.02 4.70 0.80 2.76 0.50 15.75 15.87 9.30 10.30 10.16
2.54 BCS
12.48 13.48 b P 3.183.00 3.40 P Q S 6.68 3.50 3.303.05 3.55 L e E D c A3 A b P P Q