RL4ZZ DSK | Alldatasheet
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Case: JEDEC DO-27, molded plastic MIL-STD-202, Method 208 Mounting: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60Hz ,resistive or inductiv e load. For capacitiv e load,derate by 20%. Maximum recurrent peak reverse voltage V RRM V Maximum RMS v oltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 3.5A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJL Operating junction temperature range T J Storage temperature range T STG 3. Thermal resistance f rom junction to lead . 500.0 The plastic material carries U/L recognition 94V-0 Terminals: Ax ial leads,solderable per RL4Z 200 140 RL4 Z(Z) - 55 ----- + 150 NOTE: 1.Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. Easily cleaned with freon,alcohol, lsopropanol Polarity: Color band denotes cathode Weight: 0.041 ounces, 1.15 grams I R - 55 ----- + 150 SUPER FAST RECTIFIER VOLTAGE RANGE: 200 V CURRENT: 3.5 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DO - 27 Low forward v oltage drop High current capability I F(AV) I FSM UNITS 200 0.95 A 3.5 80.0 A A 150.0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
AMBIENT TEMPERATURE, AVERAGE FORWARD CURRENT INSTANTANEOUS FORWARD CURRENT FIG.5-- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT AMPERES NUMBER OF CYCLES AT 60Hz JUNCTION CAPACITANCE, pF REVERSE VOLTAGE, VOLTS RL 4 Z(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 -- PEAK FORWARD SURGE CURRENT Z SE T TIM E BASE FOR 10/20 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIM E =10ns M AX.SOURCE IM PEDANCE=50 FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE PULSE GENERATOR (NOTE2) D.U.T. NONIN- DUCTIVE N N1 . OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) t rr -1 .0 A -0.25A +0.5A 1cm 0.1 1.0 100 T J =25 Pulse Width=300 µ s 0.2 0.4 2.0 4.0 1 1 05 100 100 8.3ms Single Half Sine-Wave 1.0 12575 10050 25 2.0 3.0 1.5 0.5 2.5 3.5 150 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.375"(9.5mm)Lead Length T J =25 f=1.0MHz 100 200 400 600 1000 0.1 0.2 0.4 1 2 4 10 40 10020 www.diode.kr Diode Semiconductor Korea