RL1N1000F RECTRON | Alldatasheet
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Technical content
VOLTAGE RANGE 1000 to 1800 Volts CURRENT 0.5 Ampere RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION
FEATURES
- High reliability * Low leakage * Low forward voltage drop * High current capability MECHANICAL DATA * Case: Molded plastic * Epoxy: Device has UL flammability classification 94V-O * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.20 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. ELECTRICAL CHARACTERISTICS (At TA = 25 o C unless otherwise noted) RL1N1000F THRU RL1N1800F A-405 MAXIMUM RA TINGS (At TA = 25 o C unless otherwise noted) NOTES : 1. T est Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts Dimensions in inches and (millimeters) 2001-6 RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 55 o C Peak Forward Surge Current IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL V RRM VDC IO IFSM C J TJ, TSTG V RMS Volts Volts Volts Amps500 -65 to + 175 Amps pF 0 C UNITS 1000 1400 1600 18001200 700 980 1120 1260840 1000 1400 1600 18001200 RL1N1000F RL1N1400F RL1N1600F RL1N1800FRL1N1200F at Rated DC Blocking Voltage TA = 25 o C CHARACTERISTICS Maximum Full Load Reverse Current Average, Full Cycle .375” (9.5mm) lead length at TL = 55 o C Maximum Reverse Recovery Time (Note 1) V F SYMBOL IR trr 1.8 5.0 100 300 uAmps uAmps nSec Maximum DC Reverse Current Maximum Instantaneous Forward Voltage at 0.5A DC Volts RL1N1000F RL1N1400F RL1N1600F RL1N1800FRL1N1200F UNITS 1.0 (25.4) MIN. .166 (4.2) .205 (5.2) 1.0 (25.4) MIN. .107 (2.7) .080 (2.0) DIA. .025 (0.6) .021 (0.5) DIA.
FIG. 4 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) REVERSE VOLTAGE, ( V ) 200 100 .1 .2 .4 1.0 2 4 10 20 40 100 TJ = 25 RATING AND CHARACTERISTIC CURVES ( RL1N1000F THRU RL1N1800F ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC NONINDUCTIVE NONINDUCTIVE D.U.T
25 Vdc
(approx) ( - ) ( - ) ( + ) ( + ) NON- INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) NOTES: 1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Souce Impedance = 50 ohms. trr +0.5A -0.25A -1.0A 1cm SET TIME BASE FOR 50/100 ns/cm FIG. 1 - FORWARD CURRENT AVERAGE FORWARD RECTIFIED DERATING CURVE CURRENT, (mA) AMBIENT TEMPERATURE ( ) Single Phase Half Wave 60Hz Resistive or Inductive Load 25 50 75 100 125 150 175 500 400 300 200 100 600 FIG. 2 - TYPICAL INSTANTANEOUS INSTANTANEOUS FORWARD FORWARD CHARACTERISTICS CURRENT, (A) INSTANTANEOUS FORWARD VOLTAGE, (V) TJ=25 Pulse Width = 300uS 1% Duty Cycle .01 .02 .04 .06 1.0 FIG. 3 - MAXIMUM NON-REPETITIVE SURGE CURRENTPEAK FORWARD SURGE CURRENT, (A) NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine-Wave (JEDEC Method) 1 2 4 6 10 20 40 60 100