RL1605F THINKISEMI | Alldatasheet
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Features
/hexstar2 Low forward voltage drop /hexstar2 Avalanche energy rated(100% guarantee) /hexstar2 High current capability /hexstar2 Case: ITO-220AC fully plastic isolated package /hexstar2 High surge current capability /hexstar2 Weight: 2.0 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant RL1605F/RL1606F/RL1607F Pb Free Plating Product RL1605F/RL1606F/RL1607F
16.0 Amperes Insulated Single Glass Passivated Process Avalanche Rectifier Diode
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3 Application Pb /hexstar2 PhotoVoltaic BY-PASS DIODE /hexstar2 PhotoVoltaic High-amperage Combiner Boxes /hexstar2 Alternator(Automotive Wireharness/Capacitor Bank) Rev.10T ITO-220AC/TO-220F-2L Internal Configuration V Characteristic Symbol Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R RMS Reverse Voltage V R(RMS) A verage Rectified Output Current @T C F(AV) 16.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 250 A Forward Voltage @I F FM 1.1 P e a k R e v e r s e C u r r e n t @ T A = 25°C At Rated DC Blocking Voltage @T A = 125°C I RM 5.0 50 µA Typical Junction Capacitance (Note 2) C j 100 pF Operating and Storage Temperature Range T j , T STG -65 to +150 °C RL1607F 120°C I 600 800 1000 V 420 560 700 V
16.0 A V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS For capacitive load, derate current by 20%. Single phase, half wave, 60Hz, resistive or inductive load. Rating at 25 ambient temperature unless otherwise specified. AK
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/3Rev.10T 100 200 250 300 1 10 100 I , PEAK FORWARD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 8.3 ms single half-sine-wave JEDEC method 100 1000 0.1 1.0 10 100 V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R C , CAPACITANCE (pF) j 16.0 20.0 0 60 120 180 I , AVERAGE FORWARD CURRENT (A) (AV) T , CASE TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve C 0.1 1.0 100 0.2 0.6 1.0 1.4 I , INSTANTANEOUS FORWARD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F Pulse width = 300 s 2% duty cycle m 150 RL1605F/RL1606F/RL1607F 12.0 8.0 4.0
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/3Rev.10T ITO-220AC/TO-220F-2L Package Outline: .196(5.00) .118(3.00) .038(0.96) .419(10.66) .167(3.73) .122(3.10) .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .079(2.00) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) Unit : inch (mm) RL1605F/RL1606F/RL1607F