RL101G DSK | Alldatasheet
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Glass passivated chip junction and similar solvents MECHANICAL DATA Case:JEDEC A - 405,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method208 Polarity: Color band denotes cathode end MA XIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RL 103G RL 104G RL 105G RL 106G RL 107G UNITS M axim um recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Maxximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T A =125 Maximum instantaneous forw ard voltage @ 1.0 A V F V M axim um reverse current @T A =25 at rated DC blocking voltage @T A =100 Typical junction capacitance (Note1) C J pF Typical therm al resistance (N ote2) R JA Operating junction temperature range T J Storage temperature range T STG A - 405 High forward voltage drop High current capability RL 101G RL101G - - - RL107G A Diffused junction Easily cleaned with Freon,Alcohol,lsopropanol Mounting position: Any 100 The plastic material carries U/L recognition 94V-O VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A PLASTIC SILICON RECTIFIERS -55----+150 100 1.0 Weight: 0.008 ounces,0.23 grams I F(AV) RL 102G 2. Thermal resistance from junction to ambient. 50.0 NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. -55----+150 I R 5.0 µ A A I FSM 30.0 1.0 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
.4 1.0 2 100 4 10 20 40 100 f=1MHz T J =25 0.01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 100 T J =25 Pulse Width=300us 0.2 0.4 0.6 0.8 0 2 55 07 51 00 12 5 Single Phase Half Wave 60H Z Resistive or Inductive Load 150 1.0 T J =125 8.3ms Single Half Sine-Wave 24 108 10040 60 80 AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES AMPERES JUNCTION CAPACITANCE,pF FIG.3 -- PEAK FORWARD SURGE CURRENT FIG.4 --TYPICAL JUNCTION CAPACITANCE REVERSE VOLT AGE,VOLT S RL101G - - - RL107G AMBIENT T EMPERAT URE, INSTANTANEOUS FORWARD VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz FIG.1 -- FORWARD DERATING CURVE FIG.2 -- TYPICAL FORWARD CHARACTERISTIC PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT www.diode.kr Diode Semiconductor Korea