RHTVSDC0321N-T SXSEMI | Alldatasheet
Document overview
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Technical content
Description
T h e protectssensitivesemiconductorcomponentsfrom damage or upset due to electrostatic discharge (ESD) and other voltage inducedtransient events.Theyfeature large cross-sectional areajunctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. Feature DFN0603-2L package ReplacementforMLV(0201) Bidirectionalconfigurations Responsetime istypically< 1 ns Lowclampingvoltage RoHScompliant Transient protectionfordatalinesto IEC61000-4-2(ESD) ±30KV(air),±25KV(contact).
Applications
Mechanical Characteristics Mounting position:Any Qualified maxreflowtemperature:260℃ Device meets MSL 1 requirements DFN0603-2Lwithout plating RHTVSDC0321N-T Transient Voltage Suppressors for ESD Protection RHTVSDC0321N-T 1 www.sxsemi.com
VRWM Peak ReverseWorkingVoltage IR Reverse LeakageCurrent@VRWM VBR BreakdownVoltage@ IT IT Test Current IPP Maximum Reverse Peak PulseCurrent VC ClampingVoltage@ IPP PPP Peak Pulse Power CJ JunctionCapacitance IF ForwardCurrent VF ForwardVoltage@ IF Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Peak ReverseWorkingVoltage VRWM 3.3 V BreakdownVoltage VBR I = 1mAt 4.0 V Reverse LeakageCurrent IR VRWM =3.3V T=25℃ 1.0 μA ClampingVoltage VCL IPP=16A tp=100ns 10.0 V ClampingVoltage VC IPP = 1A tP =8/20μs 6.5 8.0 V ClampingVoltage VC IPP =6A tP =8/20μs 8.0 12.0 V JunctionCapacitance Cj VR=0V f= 1MHz 12.0 20.0 pF Absolute maximum rating@25℃ Rating Symbol Value Units Peak Pulse Power(tp=8/20μS) Ppp 80 W OperatingTemperature TJ -55to 150 ℃ StorageTemperature TSTG -55to 150 ℃ VC VBR VRWM IT IR VRWM VBR VCIR IT IPP IPP V I Transient Voltage Suppressors for ESD Protection RHTVSDC0321N-T 2 www.sxsemi.com
Fig3.Clampingvoltagevs. Peak pulsecurrent Fig4.Capacitancevs. Reveresvoltage Typical Characteristics tf=8μs tP =20 μ s(IPP /2) 0 5 10 15 20 25 30 t-Time -μs Fig 1.PulseWaveform 0 25 50 75 100 125 150 TL – LeadTemperature-℃ Fig2.PowerDerating Curve 8.8 6.6 4.4 2.2 IPP-Peak pulsecurrent (A) VR-Reverse voltage (V) 1000 100 0 10 100 1000 Pulse Duration(us) Fig5. Non Repetitive Peak Pulse Powervs. Pulsetime -12 -10 -8 -6 -4 -2 0 2 4 6 8 Voltage (V) Fig6.TLP Measurement -12 -16 -20 10 12 100 100 40 40 60 60 8080 Puls ewave form: tp=8/20us Transient Voltage Suppressors for ESD Protection RHTVSDC0321N-T 3 www.sxsemi.com
-20 0 20 40 60 80 100 120 140 Times - ns -20 0 20 40 60 80 100 120 140 Times - ns Fig7.ClampingVoltage at IEC61000-4-2 +8kV PulseWaveform Fig8.ClampingVoltageat IEC61000-4-2 -8kV PulseWaveform Solder Reflow Recommendation 300 250 200 150 100 Preliminary Heating Soldering Cooling(in air) 260℃ (+0,-5℃) 245℃ (+0,-5℃) 120℃ 100℃ 2to 5 min Lessthan 10s Remark:Pbfreefor260℃; Pbfor245℃. -10 -20 -30 -40 -50 -60 -70 -10 -20 morethan 1 min VCL-max-peak = -63.5V VCL-30ns-peak = -8.5V VCL-30ns-peak = 9.3V VCL-max-peak = 70.5V Transient Voltage Suppressors for ESD Protection RHTVSDC0321N-T 4 www.sxsemi.com
Product dimension (DFN0603-2L) (Optional) Dim Millimeters Inches Min Max Min Max A 0.27 0.35 0.011 0.014 A1 0.00 0.05 0.000 0.002 b1 0.13 0.23 0.005 0.009 b2 0.14 0.24 0.006 0.009 C 0.05 0.15 0.002 0.006 D 0.55 0.65 0.022 0.026 e 0.35 BSC 0.014 BSC L1 0.025 BSC 0.001 BSC L2 0.035 BSC 0.001 BSC E 0.25 0.35 0.010 0.014 L 0.20 0.30 0.008 0.012 h 0.00 0.10 0.000 0.004
Ordering information
Device Package Reel Shipping TAPING DFN0603-2L(Pb-Free) 7" 15000/Tape & Reel 0.65 0.25 0.15 0.32 Suggested PCB Layout Unit:mm 0.40 Transient Voltage Suppressors for ESD Protection RHTVSDC0321N-T 5 www.sxsemi.com