RHRP8120

RHRP8120 THINKISEMI | Alldatasheet

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T C

ELECTRICAL CHARACTERISTICS

T =25°C unless otherwise specified C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V Maximum D.C. Reverse Voltage R 1200 V V Maximum Repetitive Reverse Voltage RRM 1200 V I Average Forward Current F(AV) T C 10 =110°C A I RMS Forward Current F(RMS) T C 15 =110°C A I Non-Repetitive Surge Forward Current FSM T J 100 =45°C, t=10ms, 50Hz, Sine A P Power Dissipation D 70 W T Junction Temperature J -40 to +150 °C T Storage Temperature Range STG -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R Thermal Resistance θJC Junction-to-Case 1.8 °C /W Weight 2.2 g Symbol Parameter Test Conditions Min. Typ. Max. Unit I Reverse Leakage Current RM V R V R =1200V, T J V Forward Voltage F I F -- =10A 2.4 -- V I F =10A, T J t Reverse Recovery Time rr I F =1A, V R =30V, di F -- /dt=-200A/μs 22 -- ns t Reverse Recovery Time rr V R =600V, I F =10A di F /dt=-200A/μs, T J =25°C 44 -- ns I Max. Reverse Recovery Current RRM -- 3.5 -- A t Reverse Recovery Time rr V R =600V, I F =10A di F /dt=-200A/μs, T J =125°C 220 -- ns I Max. Reverse Recovery Current RRM -- 6.5 -- A RHRP8120 Pb Free Plating Product RHRP8120

10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diodes

• Ultrafast Recovery Time
• Soft Recovery Characteristics
• Low Recovery Loss
• Low Forward Voltage
• High Surge Current Capability
• Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE RHRP8120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. TO-220AC/TO-220C-2P Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/3Rev.05 Base Backside

I F (A) V F （V） Fig1. Forward Voltage Drop vs Forward Current T J =125°C T J =25°C di F /dt（A/μs） Fig2. Reverse Recovery Time vs di F /dt 1000 800 600 400 200 0 0 t rr (ns) 100 250 300 350 V R =600V T J =125°C I F =20A I F =5A I F =10A I RRM (A) di F /dt（A/μs） Fig3. Reverse Recovery Current vs di F /dt 0 200 400 600 800 1000 di F /dt（A/μs） Fig4. Reverse Recovery Charge vs di F /dt 1000 800 600 400 200 0 0 300 Q rr (nc) 600 900 1200 V R =600V T J =125°C I F =20A I F =5A V R =600V T J =125°C I F =20A I F =5A K f 0.2 0.4 1.4 0.6 Z thJC (K/W) 0.8 I RRM Q rr t rr T J (°C) Fig5. Dynamic Parameters vs Junction Temperature 0 25 50 100 150 1 10 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance 75 125 1.5 1.2 1500 3.5 200 150 I F =10A I F =10A Duty 0.5 0.2 0.1 0.05 Single Pulse 1.0 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/3Rev.05 RHRP8120

Fig7. Diode Reverse Recovery Test Circuit and Waveform I F dI F /dt t rr I RRM Q rr 0.25 I RRM 0.9 I RRM Dimensions in Millimeters Fig8. Package Outline © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 3/3Rev.05 RHRP8120