RHRP3060U THINKISEMI | Alldatasheet

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Technical content

30.0 Ampere SwitchMode Ultrafast Recovery Epitaxial Diode

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/3 Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE RHRP3060U using lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. Rev.05 ABSOLUTE MAXIMUM RATINGS T C

ELECTRICAL CHARACTERISTICS

T =25°C unless otherwise specified C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V Maximum D.C. Reverse Voltage R 600 V V Maximum Repetitive Reverse Voltage RRM 600 V I Average Forward Current F(AV) T C 30 =100°C, Per Diode A I RMS Forward Current F(RMS) T C 42 =100°C, Per Diode A I Non-Repetitive Surge Forward Current FSM T J 250 =45°C, t=10ms, 50Hz, Sine A P Power Dissipation D 156 W T Junction Temperature J -55 to +150 °C T Storage Temperature Range STG -55 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R Thermal Resistance th(J-C) Junction-to-Case, Per Diode 0.8 °C /W Weight 2.5 g Symbol Parameter Test Conditions Min. Typ. Max. Unit I Reverse Leakage Current RM V R -- =600V -- 10 µA V R =600V, T J -- =125°C -- 10 mA V Forward Voltage F I F -- =30A 2.0 2.4 V I F =30A, T J -- =125°C 1.6 -- V t Reverse Recovery Time rr I F =1A, V R =30V, di F -- /dt=-200A/μs 20 -- ns t Reverse Recovery Time rr V R =300V, I F =30A di F /dt=-200A/μs, T J =25°C 30 -- ns I Max. Reverse Recovery Current RRM -- 3 -- A t Reverse Recovery Time rr V R =300V, I F =30A di F /dt=-200A/μs, T J =125°C 100 -- ns I Max. Reverse Recovery Current RRM -- 6 -- A S -- 1.6 -- --

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/3Rev.05 RHRP3060U I F (A) V F （V） Fig1. Forward Voltage Drop vs Forward Current T J =125°C T J =25°C 0.5 1.0 1.5 2.0 2.5 3.0 di F /dt（A/μs） Fig2. Reverse Recovery Time vs di F /dt 800 600 400 200 100 0 t rr (ns) 120 160 200 V R =300V T J =125°C I RRM (A) di F /dt（A/μs） Fig3. Reverse Recovery Current vs di F /dt 100 200 400 600 800 di F /dt（A/μs） Fig4. Reverse Recovery Charge vs di F /dt 800 600 400 200 100 0 100 Q rr (nc) 200 400 500 V R =300V T J =125°C V R =300V T J =125°C I F(AV) Z thJC (K/W) T C (°C) Fig5. Forward current vs.Case temperature 50 75 125 175 10 1 10 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance 100 150 600 T J =25°C T J =25°C T J =25°C 0.1 0.01 300

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 3/3Rev.05 Dimensions TO-220AC RHRP3060U Fig7. Diode Reverse Recovery Test Circuit and Waveform I F dI F /dt t rr I RRM Q rr 0.25 I RRM 0.9 I RRM