RHN7150 IRF | Alldatasheet
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Part Number BV DSS R DS(on) ID IRHN7150 100V 0.055Ω 34A IRHN8150 100V 0.055Ω 34A Features: ■ Radiation Hardened up to 1 x 106 Rads (Si) ■ Single Event Burnout (SEB) Hardened ■ Single Event Gate Rupture (SEGR) Hardened ■ Gamma Dot (Flash X-Ray) Hardened ■ Neutron Tolerant ■ Identical Pre- and Post-Electrical T est Conditions ■ Repetitive Avalanche Rating ■ Dynamic dv/dt Rating ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically Sealed ■ Surface Mount ■ Light-weight N-CHANNEL MEGA RAD HARD Provisional Data Sheet No. PD-9.720A 100 Volt, 0.055ΩΩΩΩΩ , MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage sta- bility and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifi- cations up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 10
12 Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as volt- age control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, au- dio amplifiers and high-energy pulse circuits in space and weapons environments. IRHN7150 IRHN8150 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ® TRANSISTOR Absolute Maximum Ratings Parameter IRHN7150, IRHN8150 Units ID @ V GS = 12V, TC = 25°C Continuous Drain Current 34 ID @ V GS = 12V, TC = 100°C Continuous Drain Current 21 IDM Pulsed Drain Current ➀ 136 PD @ TC = 25°C Max. Power Dissipation 150 W Linear Derating Factor 1.2 W/K ➄ VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 500 mJ IAR Avalanche Current ➀ 34 A EAR Repetitive Avalanche Energy ➀ 15 mJ dv/dt Peak Diode Recovery dv/dt ➂ 5.5 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Package Mounting Surface Temperature 300 (for 5 sec.) Weight 2.6 (typical) g Pre-Radiation oC A
Parameter Min. Typ. Max. Units Test Conditions R thJC Junction-to-Case — — 0.83 K/W ➄ R thJ-PCB Junction-to-PC board — TBD — soldered to a copper-clad PC board Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 34 Modified MOSFET symbol showing the ISM Pulse Source Current (Body Diode) ➀ — — 136 integral reverse p-n junction rectifier. VSD Diode Forward Voltage — — 1.9 V T j = 25°C, IS = 34A, VGS = 0V ➃ trr Reverse Recovery Time — — 570 ns T j = 25°C, IF = 34A, di/dt ≤ 100A/µs Q RR Reverse Recovery Charge — — 5.8 µ CV DD ≤ 50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD . Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage 100 — — V V GS = 0V, ID = 1.0 mA Δ BV DSS /Δ TJ Temperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, I D = 1.0 mA Voltage R DS(on) Static Drain-to-Source — 0.055 V GS = 12V, ID = 21A On-State Resistance — 0.066 Ω VGS = 12V, ID = 34A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V V DS = VGS , ID = 1.0 mA gfs Forward Transconductance 8.0 — S ( )V DS ≥ 15V, IDS = 21A ➃ IDSS Zero Gate Voltage Drain Current — — 25 V DS = 0.8 x Max Rating,VGS = 0V — — 250 V DS = 0.8 x Max Rating VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 V GS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 V GS = -20V Q g Total Gate Charge — — 160 V GS =12V, ID = 34A Q gs Gate-to-Source Charge — — 35 V DS = Max. Rating x 0.5 Q gd Gate-to-Drain (‘Miller’) Charge — — 65 td(on) Turn-On Delay Time — — 45 V DD = 50V, ID = 34A, tr Rise Time — — 190 R G = 2.35Ω td(off) Turn-Off Delay Time — — 170 tf Fall Time — — 130 LD Internal Drain Inductance — 0.8 — LS Internal Source Inductance — 2.8 — C iss Input Capacitance — 4300 — V GS = 0V, VDS = 25V C oss Output Capacitance — 1200 — f = 1.0 MHz C rss Reverse Transfer Capacitance — 200 — (see figure 22) IRHN7150, IRHN8150 Devices Pre-Radiation Ω µA nC pF nH ns Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. nA A (see figure 28) (see figures 23 and 31)
are tested to verify their hardness capability. Rectifier uses two radiation environments.
6 Rads (Si) are presented in Table 1, column 2,
radiation curves appear in figures 10 through 17.
6 Rads (Si),
no change in drive circuitry required. test circuit to be used is shown in figure 9. Table 2. High Dose Rate ➇
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Table 3. Single Event Effects ➈ Table 1. Low Dose Rate ➅ ➆ IRHN7150 IRHN8150
IRHN7150, IRHN8150 Devices Radiation Characteristics Case Outline and Dimensions – SMD-1 ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. (figure 26) Refer to current HEXFET reliability report. ➁ @ V DD = 25V, Starting TJ = 25°C, Peak IL = 34A EAS = [0.5 * L * (IL 2) * [BVDSS /(BVDSS -VDD )] VGS = 12V , 25 ≤ RG ≤ 200Ω ➂ ISD ≤ 34A, di/dt ≤ 140 A/µs, VDD ≤ BVDSS , TJ ≤ 150°C Suggested RG = 2.35Ω ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ K/W = °C/W W/K = W/°C ➅ Total Dose Irradiation with VGS Bias. +12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. (figure 8a) ➆ Total Dose Irradiation with VDS Bias. VDS = 0.8 x rated BVDSS (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. (figure 8b) ➇ This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. (figure 9) ➈ Study sponsored by NASA. Evaluation performed at Brookhaven National Labs. ➉ All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/96 Notes: 1. Dimensioning and Tolerancing per ANSI Y14.5M-1982 2. Controlling Dimension: Inch 3. Dimensions are shown in millimeters (Inches)