RHLG77110 IRF | Alldatasheet
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ID @ VGS = 4.5V, TC=25°C Continuous Drain Current 1.8 ID @ VGS = 4.5V, TC=100°C Continuous Drain Current 1.1 IDM Pulsed Drain Current /G192 7.2 PD @ TC = 25°C Max. Power Dissipation 1.4 W Linear Derating Factor 0.01 W/°C VGS Gate-to-Source Voltage ±10 V EAS Single Pulse Avalanche Energy /G193 97 mJ IAR Avalanche Current /G192 1.8 A EAR Repetitive Avalanche Energy /G192 0.14 mJ dv/dt Peak Diode Recovery dv/dt /G194 11 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063in/1.6mm from case for 10s) Weight 1.3 (Typical) g oC A /G48/G51/G47/G50/G48/G47/G48/G56 www.irf.com 1 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLG77110 100K Rads (Si) 0.22 Ω 1.8A IRHLG73110 300K Rads (Si) 0.22 Ω 1.8A For footnotes refer to the last page Pre-Irradiation RADIATION HARDENED IRHLG77110 LOGIC LEVEL POWER MOSFET 100V, Quad N-CHANNEL THRU-HOLE (MO-036AB) Features: /G110/G325V CMOS and TTL Compatible /G110 Fast Switching /G110 Single Event Effect (SEE) Hardened /G110 Low Total Gate Charge /G110 Simple Drive Requirements /G110 Ease of Paralleling /G110 Hermetically Sealed /G110 Light Weight International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. /G153 MO-036AB 2N7612M1 PD-97178
IRHLG77110, 2N7612M1 Pre-Irradiation 2 www.irf.com Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 1.8 ISM Pulse Source Current (Body Diode) /G192 — — 7.2 VSD Diode Forward Voltage — — 1.2 V T j = 25°C, IS = 1.8A, VGS = 0V /G195 trr Reverse Recovery Time — — 100 ns T j = 25°C, IF = 1.8A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 223 nC V DD ≤ 25V /G195 ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V V GS = 0V, ID = 250µA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.11 — V/°C Reference to 25°C, I D = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.22 Ω VGS = 4.5V, ID = 1.1A Resistance VGS(th) Gate Threshold Voltage 1.0 — 2.0 V V DS = VGS, ID = 250µA ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient — -4.4 — mV/°C gfs Forward Transconductance 3.0 — — S V DS = 10V, IDS = 1.1A /G195 IDSS Zero Gate Voltage Drain Current — — 1.0 V DS= 80V ,VGS= 0V —— 1 0 V DS = 80V, V GS = 0V, TJ =125°C IGSS Gate-to-Source Leakage Forward — — 100 V GS = 10V IGSS Gate-to-Source Leakage Reverse — — -100 V GS = -10V Qg Total Gate Charge — — 15 V GS = 4.5V, ID = 1.8A Qgs Gate-to-Source Charge — — 2.5 nC V DS = 50V Qgd Gate-to-Drain (‘Miller’) Charge — — 6.0 td(on) Turn-On Delay Time — — 15 V DD = 50V, ID = 1.8A, tr Rise Time — — 20 V GS = 4.5V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 65 tf Fall Time — — 25 LS + LD Total Inductance — 10 — Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad Ciss Input Capacitance — 653 — V GS = 0V, VDS = 25V Coss Output Capacitance — 119 — p F f = 1.0MHz Crss Reverse Transfer Capacitance — 2.7 — nA /G32/G32/G195 nH ns µA Thermal Resistance (Per Die) Parameter Min Typ Max Units Test Conditions RthJA Junction-to-Ambient — — 90 °C/W /G32/G32 Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. Rg Gate Resistance — 16 — Ω f = 1.0MHz, open drain
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments. conditions in order to provide a direct comparison. Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation /G196/G197/G32(Per Die)
- Part numbers IRHLG77110, IRHLG73110
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
IRHLG77110, 2N7612M1 Pre-Irradiation 4 www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 ID, Drain-to-Source Current (A) 60µs PULSE WIDTH Tj = 25°C VGS TOP 10V 5.0V 4.5V 3.0V 2.75V 2.5V 2.25V BOTTOM 2.0V 2.0V 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 0.1 ID, Drain-to-Source Current (A) 60µs PULSE WIDTH Tj = 150°C 2.0V VGS TOP 10V 5.0V 4.5V 3.0V 2.75V 2.5V 2.25V BOTTOM 2.0V 2 2.2 2.4 2.6 2.8 3 VGS, Gate-to-Source Voltage (V) 0.1 ID, Drain-to-Source Current (A) VDS = 50V 60µs PULSE WIDTH TJ = 150°C TJ = 25°C -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.0 0.5 1.0 1.5 2.0 2.5 RDS(on) , Drain-to-Source On Resistance (Norm alized) VGS = 4.5V ID = 1.8A
www.irf.com 5 Pre-Irradiation IRHLG77110, 2N7612M1 Fig 8. Typical Threshold Voltage Vs Temperature Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Temperature ( °C ) 0.0 0.5 1.0 1.5 2.0 2.5 VGS(th) Gate threshold Voltage (V) ID = 50µA ID = 250µA ID = 1.0mA ID = 150mA -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Temperature ( °C ) 100 110 120 130 V(BR)DSS, Drain-to-Source Breakdown Voltage (V) ID = 1.0mA Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current ID, Drain Current (A) 0.1 0.15 0.2 0.25 0.3 0.35 0.4 RDS(on), Drain-to -Source On Resistance (Ω) TJ = 25°C TJ = 150°C Vgs = 4.5V 0 1 2 3 4 5 6 7 8 9 10 11 VGS, Gate -to -Source Voltage (V) 0.1 0.2 0.3 0.4 0.5 RDS(on), Drain-to -Source On Resistance (Ω) ID = 1.8A TJ = 25°C TJ = 150°C
IRHLG77110, 2N7612M1 Pre-Irradiation 6 www.irf.com Fig 11. Typical Source-to-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature VSD , Source-to-Drain Voltage (V) 0.01 0.1 ISD, Reverse Drain Current (A) VGS = 0V TJ = 150°C TJ = 25°C 25 50 75 100 125 150 TC , Case Temperature (°C) 0.5 1.5 ID, Drain Current (A) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 1 10 100 VDS, Drain-to-Source Voltage (V) 200 400 600 800 1000 1200 1400 1600 C, Capacitance (pF) VGS = 0V, f = 1 MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage 0 4 8 12 16 20 24 QG, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) VDS = 80V VDS = 50V VDS = 20V ID = 1.8A FOR TEST CIRCUIT SEE FIGURE 17
www.irf.com 7 Pre-Irradiation IRHLG77110, 2N7612M1 Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 1 10 100 1000 VDS , Drain-to-Source Voltage (V) 0.1 100 ID, Drain-to-Source Current (A) Tc = 25°C Tj = 150°C Single Pulse 1ms 10ms OPERATION IN THIS AREA LIMITED BY RDS(on) 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) 0.01 0.1 100 1000 Therm al Response ( Z thJA ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 120 160 200 240 EAS , Single Pulse Avalanche Energy (m J) ID TOP 0.8A 1.1A BOTTOM 1.8A P t t DM
IRHLG77110, 2N7612M1 Pre-Irradiation 8 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors /G52/G46/G53/G86 Fig 17b. Gate Charge Test CircuitFig 17a. Basic Gate Charge Waveform VDS 90% 10% VGS td(on) tr td(off) tf Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms tp V(BR)DSS IAS Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms RG IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20V /G46 VGS /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32≤ 1 /G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32≤ 0.1 % /G82/G68 /G86/G71/G83 /G82/G71 /G68/G46/G85/G46/G84/G46 /G86/G68/G68 /G86/G71/G83
www.irf.com 9 Pre-Irradiation IRHLG77110, 2N7612M1 /G195/G32/G32Pulse width ≤ 300 µs; Duty Cycle ≤ 2% /G196/G32/G32Total Dose Irradiation with VGS Bias. 10 volt V GS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. /G197/G32 Total Dose Irradiation with V DS Bias. 80 volt V DS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. /G192/G32 Repetitive Rating; Pulse width limited by maximum junction temperature. /G193/G32/G32VDD = 25V, starting T J = 25°C, L= 6.6mH Peak IL = 1.8A, V GS = 10V /G194/G32 ISD ≤ 1.8A, di/dt ≤ 497A/µs, VDD ≤ 100V, TJ ≤ 150°C Footnotes: Case Outline and Dimensions — MO-036AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . Data and specifications subject to change without notice. 03/2008