RH6016S AD | Alldatasheet

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Technical content

Dual 3.2MHz, 0.8V/μs Low Power, Over-The- Top Precision Op Amp RH6016S ASD0016618 Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is g ranted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. One Analog Way, Wilmington, MA 01887, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2023 Analog Devices, Inc. All rights reserved.

1.0 SCOPE

This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Class V except as modified herein. The manufacturing flow described in the ADI STANDARD SPACE PRODUCTS PROGRAM brochure is to be considered a part of this specification. http://www.analog.com/space This datasheet specifically details the space grade version of this product. A more detailed operational description and a complete data sheet for commercial product grades can be found at https://www.analog.com/en/products/lt6016

2.0 Part Number

The complete part number(s) of this specification follows: Specific Part Number Description RH6016MW Dual 3.2MHz, 0.8V/μs Low Power, Over-The-Top Precision Op Amp

3.0 Case Outline

The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline Letter Descriptive Designator Terminals Lead Finish Package style X CDFP3-F10 10- lead Hot Solder Dip Bottom Brazed Flat Pack Figure 1 – Functional Block Diagram 1/ Package Top View

ASD0016618 Rev. A| Page 2 of 6 Package: X Pin Number Terminal Symbol Pin Type Pin Description

1 OUT B Analog Output Operational amplifier output, Amplifier B

2 -IN B Analog Input Operational amplifier negative input, Amplifier B. 3 +IN B Analog Input Operational amplifier positive input, Amplifier B

4 NC N/A No connection or ground for this terminal

5 V- Power Negative power supply.

6 NC N/A No connection or ground for this terminal

7 +IN A Analog Input Operational amplifier positive input, Amplifier A. 8 -IN A Analog Input Operational amplifier negative input, Amplifier A.

9 OUT A Analog Output Operational amplifier output, Amplifier A

10 V+ Power Positive power supply.

4.0 Specifications

4.1. Absolute Maximum Ratings 1/ 4.2. Recommended Operating Conditions Ambient operating temperature range (TA)…………………………. -55 °C to +125 °C 4.3. Nominal Operating Performance Characteristics (25 °C) Input Resistance Differential (RIN) 0 < VCM < V+ –1.75V……………1 MΩ Setting Time Due to Input Step (ts) 0.1% Settling …………………… 3.5 μs Input Referral Noise Voltage 0.1Hz to 10Hz, VCM < V+ –1.25V…… . 0.5 μVP-P fO = 1kHz, VCM < V+ –1.75V Input Referral Noise Current Density(in) ……………… …..…………. 0.1 pA/√Hz

ASD0016618 Rev. A | Page 3 of 6 4.4. Radiation Features Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)…. 100 krads(Si) 1/ Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions outside of those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS Parameter See notes at end of table Symbol Conditions 1/ 2/ 3/ Unless otherwise specified Sub- Group Limit Min Limit Max Units Input Offset Voltage VOS 1 -700 700 uV 2,3 -900 900 uV M, D, P, L, R 1 -700 700 uV Input Offset Current IOS 1 -15 15 nA 2,3 -50 50 nA M, D, P, L, R 1 -25 25 nA Input Bias Current IB 1 -35 35 nA 2,3 -50 50 nA M, D, P, L, R 1 -50 50 nA Open Loop Gain AVOL RL=10 kΩ ΔVOUT = 3 V 1 100 V/mV 2 60 V/mV 3 201 V/mV M, D, P, L, R 1 100 V/mV RL=10 kΩ ΔVOUT = 3 V 1, 2,3 301 V/mV 2/ M, D, P, L, R 1 50 V/mV Supply Rejection Ratio PSRR VS=±2.5V to ±25V ;VCM=VOUT= 0 V 1 90 dB 2,3 98 dB M, D, P , L, R 1 85 dB Input Common Mode Rejection Ratio CMRR VCM = –15 V to 13.25 V 1,2 90 dB 3 110 dB M, D, P , L, R 1 84 dB Output Voltage Swing Low VOL No Load 1 9.5 mV 2,3 53 mV M, D, P , L, R 1 12 mV ISINK = 5 mA 1 373 mV 2,3 498 mV M, D, P , L, R 1 425 mV Output Voltage Swing High VOH No Load 1 558 mV 2,3 698 mV M, D, P , L, R 1 580 mV ISOURCE = 5 mA 1 1500 mV 2,3 1650 mV M, D, P , L, R 1 1850 mV Short-Circuit Current ISC 50 Ω to GND 1 22.1 60 mA 2,3 10.2 60 mA M, D, P , L, R 1 18 75 mA Gain Bandwidth Product GBW fTEST = 100 kHz 4,5 1.95 MHz 6 2.57 MHz M, D, P , L, R 4 1.9 MHz Slew Rate SR VOUT = 3 V 4 0.6 V/μs 5 0.25 V/μs

ASD0016618 Rev. A| Page 4 of 6 Table I Notes: 1/ Device supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation. However, device is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA = +25°C. 2/ VS = ±2.5 V, VCM = VOUT = Mid-Supply. 3/ VS = ±15 V, VCM = VOUT = Mid-Supply. TABLE IIA – ELECTRICAL TEST REQUIREMENTS Test Requirements Subgroups (in accordance with MIL-PRF-38535, Table III) Interim Electrical Parameters 1, 4 Final Electrical Parameters 1, 2, 3, 4, 5, 6 1/ 2/ Group A Test Requirements 1, 2, 3, 4, 5, 6 Group C end-point electrical parameters 1, 2, 3, 4, 5, 6 2/ Group D end-point electrical parameters 1, 4 Group E end-point electrical parameters 1, 4 Table IIA Notes: 1/ PDA applies to Table I subgroup 1 and 4 and Table IIB delta parameters. 2/ See Table IIB for delta parameters TABLE IIB – LIFE TEST/BURN-IN DELTA LIMITS (1/,2/,3/) VS = ±15 V and ±2.5 V Parameter Symbol Delta Units Supply Current ISY +/- 15 % Input Offset Voltage VOS +/- 350 uV Input Offset Current IOS +/-7.5 nA TABLE IIB Notes: 1/ 240-hour burn-in and 1000-hourr life test end point electrical parameters. 2/ Deltas are performed at TA = +25 °C only 3/ Product is tested in accordance with conditions in Table I. Parameter See notes at end of table Symbol Conditions 1/ 2/ 3/ Unless otherwise specified Sub- Group Limit Min Limit Max Units 6 0.52 V/μs M, D, P , L, R 4 0.5 V/μs Supply Current per Amplifier ISY 1 400 μA 2 600 μA 3 525 uA M, D, P , L, R 1 410 uA

ASD0016618 Rev. A | Page 5 of 6

5.0 Burn-In Life Test, and Radiation

5.1. Burn-In Test Circuit, Life Test Circuit 5.1.1. The test conditions and circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 test condition B of MIL-STD- 883. 5.1.2. HTRB is not applicable for this drawing.

6.0 MIL-PRF-38535 QMLV Exceptions

6.1 Wafer Fabrication

Wafer Lot Acceptance (WLA) per MIL-STD-883 TM 5007 and Scanning Electron Microscopy (SEM) inspection per MIL-STD-883 TM2018 are not available for this product.

7.0 Application Notes

7.1 Supply Voltage

The positive supply pin of the RH6016S should be bypassed with a small capacitor (typically 0.1μF) as close to the supply pins as possible. When driving heavy loads an additional 4.7μF electrolytic capacitor should be added. When using split supplies, the same is true for the V– supply pin.

7.2 Shutdown

While there are no dedicated shutdown pins, the amplifiers can effectively be shut down into a low- power state by removing V+. In this condition the input bias current is typically less than 1nA with the inputs biased between V– and 76V above V–, and if the inputs are taken below V–, they appear as a diode in series with 1k of resistance.

7.3 Reverse Battery

The RH6016S is protected against reverse battery voltages up to 50V. In the event a reverse battery condition occurs, the supply current is typically less than 5µA (assuming the inputs are biased within a diode drop from V–).

8.0 Package Outline Dimensions

The W package and outline dimensions can also be found at http://www.analog.com or upon request.

ASD0016618 Rev. A| Page 6 of 6 ORDERING GUIDE

Revision History

Rev Description of Change Date A Initial Production Release 05/05/2023 Model Temperature Range Package Description Package Option RH6016MW –55°C to +125°C 10-Lead Bottom Brazed Flat Pack CDFP3-F10 © 20 23 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective companies. Printed in the U.S.A. 05/23