STRH40N25FSY3 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Pre-irradiation
  • 2.2 Post-irradiation
  • 3 Test circuit
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Low RDS(on) ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge ■ Light weight ■ 100% avalanche tested ■ Application oriented characterization ■ Hermetically sealed ■ Heavy ion SOA ■ 100kRad TID ■ SEL & SEGR with 34Mev/cm²/mg LET ions

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to improve immunity to space effect. It is therefore suitable as power switch in mainly high-efficiency DC-DC converters and Motor Control applications. It is also intended for any application with low gate charge drive requirements.

Applications

■ Satellite ■ High reliability applications Internal schematic diagram Type V DSS STRH40N25FSY3 250V TO-254AA Order codes Part number Marking Package Packaging STRH40N25FSY1(1) 1. Mil temp range RH40N25FSY1 TO-254AA Individual strip pack STRH40N25FSY3 (2) 2. Space flights parts (full ESA flow screening) RH40N25FSY3 TO-254AA Individual strip pack

1 Electrical ratings

Table 1. Absolute maximum ratings (pre-irradiation)

  1. Rated according to the Rthj-case
  2. Pulse width limited by safe operating area

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

2.1 Pre-irradiation

Table 4. On/off states Table 5. Dynamic Table 6. Switching times

2.2 Post-irradiation

radiation environments. Every manufacturing lot is tested for total ionizing dose. Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec. Table 8. On/off states

Table 9. Single event effect, SOA (1)

  1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect

Table 10. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2.3 Electrical characteristi cs (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics

3 Test circuit

Figure 12. Switching times test circuit for resistive load (1)

  1. Max driver V GS slope = 1V/ns (no DUT)

4 Package mechanical data

DIM. mm. inch A 13.59 13.84 0.535 0.545 B 13.59 13.84 0.535 0.545 C 20.07 20.32 0.790 0.80 D 6.32 6.60 0.249 0.260 E 1.02 1.27 0.040 0.050 F 3.53 3.78 0.139 0.149 G 16.89 17.40 0.665 0.685 H 6.86 0.270 I 0.89 1.14 0.035 0.045 J 3.81 0.150 K 3.81 0.150 L 12.95 14.50 0.510 0.570 M 3.05 0.120 N 0.71 0.025 R1 1.0 0.040 R2 1.65 0.065 TO-254AA MECHANICAL DATA

5 Revision history

Table 11. Revision history