RH37C

RH37C AD | Alldatasheet

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Precision Operational Amplifier TA = 25°C SUB- SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS VOS Input Offset Voltage 1 100 4 300 2, 3 µV ΔVOS Average Offset Drift 4, 7 1.8 µV/°C ΔTemp ΔVOS Long-Term Input Offset 2, 4 2 µV/Month ΔTime Voltage Stability IOS Input Offset Current 75 1 135 2, 3 nA IB Input Bias Current ±80 1 ±150 2, 3 nA TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 9) U A UGWA WU WA RBSOLUTEX I T I SDESCRIPTIO The RH37C combines very low noise with excellent preci- sion and high speed specifications. The low 1/f noise corner frequency of 2.7Hz combined with 3.5nV√Hz 10Hz noise and low offset voltage make the RH37C an excellent choice for low frequency military instrumentation applica- tions. The wafer lots are processed to Analog Devices’ in-house Class S flow to yield circuits usable in stringent military applications. For complete electrical specifications and performance curves see the OP-27/OP-37 data sheet. BUR -I CIRCUITU U WU UPACKAGE/ORDER I FOR ATIO , LTC and LT are registered trademarks of Analog Devices. 10k 200Ω 10k 20V –20V RH37C BI TOP VIEW VOS TRIM VOS TRIM –IN OUT NC+IN V– (CASE) H PACKAGE 8-LEAD TO-5 METAL CAN TOP VIEW VOS TRIM –IN +IN V VOS TRIM OUT NC J8 PACKAGE 8-LEAD CERDIP TOP VIEW W PACKAGE 10-LEAD CERPAC NC VOS TRIM –IN +IN NC V OS TRIM OUT NC

TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS VOS Input Offset Voltage 1 100 130 180 280 400 µV IOS Input Offset Current 75 75 90 120 180 nA IB Input Bias Current ±80 ±80 ±125 ±200 ± 400 nA Input Resistance 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) G Ω Common Mode Input Voltage Range 4 ±11 ±11 ±11 ±11 ± 11 V CMRR Common Mode VCM = ±11V 100 100 97 94 90 dB Rejection Ratio PSRR Power Supply VS = ±4V to ±18V 94 94 92 90 86 dB Rejection Ratio AVOL Large-Signal Voltage Gain R L ≥ 2k, VO = ±10V 700 700 700 700 400 V/mV SR Slew Rate RL ≥ 2k 1.7 1.7 1.7 1.5 1 V/ µs ZO Open-Loop Output Resistance V O = 0, IO = 0 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) Ω PD Power Dissipation 170 170 170 170 170 mW 100KRAD(Si)50KRAD(Si)20KRAD(Si)10KRAD(Si) 200KRAD(Si) (Preirradiation) (Note 9) TA = 25°C SUB- SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS en Input Noise Voltage 0.1Hz to 10Hz 4, 5 0.25 µVP-P Input Noise Voltage Density f O = 10Hz 3 8.0 nV/√Hz fO = 30Hz 4 5.6 nV/√Hz fO = 1000Hz 4 4.5 nV/√Hz in Input Noise Current Density f O = 1000Hz 4, 6 0.6 pV/√Hz Input Resistance 2 GΩ Common Mode Input Voltage Range 4 ±11 ±10.2 V CMRR Common Mode VCM = ±11V 100 1 dB Rejection Ratio V CM = ±10V 94 2, 3 dB PSRR Power Supply VS = ±4V to ±18V 94 1 dB Rejection Ratio V S = ±4.5V to ±18V 86 2, 3 dB AVOL Large-Signal Voltage Gain R L ≥ 2k, VO = ±10V 700 4 300 5, 6 V/mV RL ≥ 600Ω , VO = ±1V 4 200 V/mV VS = ±4V VOUT Maximum Output RL = 2k ±11.5 4 ±10.5 5, 6 V Voltage Swing R L = 600Ω± 10.0 4 V SR Slew Rate RL = 2k, AVCL ≥ 51 1 7 V / µs GBW Gain-Bandwidth Product f O = 10kHz (AVCL ≥ 5) 4 45 MHz fO = 1MHz (AVCL ≥ 5) 40 MHz ZO Open-Loop Output Resistance V O = 0, IO = 0 470 Ω PD Power Dissipation 170 1 mW TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10)

–15V +10k TYPICAL PERFOR A CE CHARACTERISTICSWU TOTAL DOSE KRAD (Si) POSITIVE SLEW RATE (V/µs) RH37C G01 100 1000 VS = –15V RL = 2k AVCL ‡ 5 TOTAL DOSE KRAD (Si) NEGATIVE SLEW RATE (V/µs) RH37C G02 100 1000 VS = –15V RL = 2k AVCL ‡ 5 Positive Slew Rate Negative Slew Rate TABLE 1A: ELECTRICAL CHARACTERISTICS Note 6: See test circuit for current noise measurement on OP-27/OP-37 data sheet. Note 7: The average input offset drift performance is within the specifica- tions unnulled or when nulled with a pot having a range 8kΩ to 20kΩ . Note 8: The RH37C’s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±0.7V, the input current should be limited to 25mA. Note 9: VS = ± 15V, VCM = 0V unless otherwise noted. Note 10: TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted. Note 1: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power. Note 2: Long-term input offset voltage stability refers to the average trend line of offset voltage vs time over the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5µV. Refer to the typical performance curves. Note 3: Sample tested to an LTPD of 15 on every lot. Contact factory for 100% testing of 10Hz voltage density noise. Note 4: Parameter is guaranteed by design, characterization, or correlation to other tested parameters. Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz tester on OP-27/OP-37 data sheet. Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn- in in that lot shall be used to determine the percent for the lot. Analog Devices reserves the right to test to tighter limits than those given. TYPICAL PERFOR A CE CHARACTERISTICSWU Open-Loop GainInput Offset Voltage Input Bias Current Common Mode Rejection Ratio Input Offset Current TOTAL DOSE KRAD (Si) INPUT OFFSET CURRENT (nA) RH37C G07 –25 –50 10 100 1000 VS = –15V VCM = 0V Power Supply Rejection Ratio TOTAL DOSE KRAD (Si) 150 100 RH37C G03 –50 –100 10 1000 –150 –200 100 INPUT OFFSET VOLTAGE (µV) VS = –15V VCM = 0V TOTAL DOSE KRAD (Si) 140 150 170 100 RH37C G04 130 120 10 1000 110 100 160 OPEN-LOOP GAIN (dB) VS = – 15V RL = 2k VOUT = – 10V TOTAL DOSE KRAD (Si) 200 250 350 100 RH37C G05 150 100 10 1000 300 INPUT BIAS CURRENT (nA) VS = – 15V VCM = 0V TOTAL DOSE KRAD (Si) 140 150 170 100 RH37C G06 130 120 10 1000 110 100 160COMMON MODE REJECTION RATIO (dB) VS = – 15V VCM = –11V TABLE 2: ELECTRICAL TEST REQUIRE E TS U W MIL-PRF-38535 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements 1*,2,3,4,5,6,7 Group A Test Requirements 1,2,3,4,5,6,7 Group C End Point Electrical Parameters * PDA applies to subgroup 1. See PDA Test Notes. TOTAL DOSE KRAD (Si) 110 120 140 100 RH37C G08 100 10 1000 130POWER SUPPLY REJECTION RATIO (dB) VS = – 4V TO – 18V Group D End Point Electrical Parameters Group E End Point Electrical Parameters

REVISION HISTORY

REV DATE DESCRIPTION PAGE NUMBER C 07/24 Updated Table 2: Electrical Characteristics 4 (Revision history begins at Rev C) RH37C Rev. C © ANALOG DEVICES, INC. 1994-2024