RH27

RH27 AD | Alldatasheet

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Rev. FFor more information www.analog.com

PACKAGE INFORMATION

DESCRIPTION

All registered trademarks and trademarks are the property of their respective owners. ABSOLUTE MAXIMUM RATINGS The RH27 combines very low noise with excellent precision and high speed specifications. The low 1/f noise corner frequency of 2.7Hz combined with 3.5nV√Hz 10Hz noise and low offset voltage make the RH27 an excellent choice for low frequency military instrumentation applications. The wafer lots are processed to Analog Devices’ in-house Class S flow to yield circuits usable in stringent military applications. For complete electrical specifications and performance curves see the OP-27/OP-37 data sheet. 10k 200/uni03A9 10k 20V –20V OR 20V –20V TOP VIEW VOS TRIM VOS TRIM –IN OUT NC+IN V– (CASE) H PACKAGE 8-LEAD TO-5 METAL CAN TOP VIEW VOS TRIM –IN +IN VOS TRIM OUT NC J8 PACKAGE 8-LEAD CERDIP TOP VIEW W PACKAGE 10-LEAD CERPAC NC VOS TRIM –IN +IN NC VOS TRIM OUT NC ORDER PART NUMBER ORDER PART NUMBER ORDER PART NUMBER RH27EH RH27CH RH27CJ8 RH27AEW (Note 11) RH27EW RH27CW

Rev. F For more information www.analog.com TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX SUB- GROUP MIN TYP MAX SUB- GROUP UNITS VOS Input Offset Voltage RH27AE RH27E RH27C 100 100 300 2, 3 2, 3 2, 3 µV µV µV ∆VOS ∆Temp Average Offset Drift RH27E RH27C 4, 7 4, 7 1.8 µV/°C µV/°C ∆VOS ∆Time Long-Term Input Offset Voltage Stability RH27E RH27C 2, 4 2, 4 µV/ Month IOS Input Offset Current RH27E RH27C 135 2, 3 2, 3 nA nA IB Input Bias Current RH27E RH27C ±40 ±80 ±60 ±150 2, 3 2, 3 nA nA en Input Noise Voltage 0.1Hz to 10Hz (RH27E) 0.1Hz to 10Hz (RH27C) 4, 5 4, 5 0.18 0.25 µVP-P µVP-P Input Noise Voltage Density fO = 10Hz (RH27E) fO = 30Hz (RH27E) fO = 1000Hz (RH27E) fO = 10Hz (RH27C) fO = 30Hz (RH27C) fO = 1000Hz (RH27C) 5.5 4.5 3.8 5.6 4.5 nV/√Hz nV/√Hz nV/√Hz nV/√Hz nV/√Hz nV/√Hz in Input Noise Current Density fO = 1000Hz 4, 6 0.6 pA/√Hz Input Resistance Common Mode RH27E RH27C GΩ GΩ Input Voltage Range RH27E RH27C ±11 ±11 ±10.3 ±10.2 V V CMRR Common Mode Rejection Ratio VCM = ±11V (RH27E) VCM = ±10V (RH27E) VCM = ±11V (RH27C) VCM = ±10V (RH27C) 114 100 108 2, 3 2, 3 dB dB dB dB PSRR Power Supply Rejection Ratio VS = ±4V to ±18V (RH27E) VS = ±4.5V to ±18V (RH27E) VS = ±4V to ±18V (RH27C) VS = ±4.5V to ±18V (RH27C) 100 2, 3 2, 3 dB dB dB dB AVOL Large-Signal Voltage Gain RL ≥ 2kΩ, VO = ±10V (RH27E) RL ≥ 600Ω, VO = ±1V (RH27E) VS = ±4V RL ≥ 2kΩ, VO = ±10V (RH27C) RL ≥ 600Ω, VO = ±1V (RH27C) VS = ±4V 1000 250 700 200 600 300 5, 6 5, 6 V/mV V/mV V/mV V/mV VOUT Maximum Output Voltage Swing RL ≥ 2kΩ (RH27E) RL ≥ 600Ω (RH27E) RL ≥ 2kΩ (RH27C) RL ≥ 600Ω (RH27C) ±12 ±10 ±11.5 ±10 ±11.5 ±10.5 5, 6 5, 6 V V V V SR Slew Rate RL ≥ 2kΩ 1.7 7 V/µs GBW Gain-Bandwidth Product fO = 100kHz 4 5 MHz ZO Open-Loop Output Resistance VO = 0, IO = 0 70 Ω PD Power Dissipation RH27E RH27C 140 170 mW mW TA = 25°C –55°C ≤ TA ≤ 125°C (Preirradiation) (Note 9) Device is characterized at the TID levels below. Device is production tested at 100kRad(si).

Rev. FFor more information www.analog.com TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS VOS Input Offset Voltage RH27E RH27C 100 130 100 180 150 280 200 400 µV µV IOS Input Offset Current RH27E RH27C 120 180 nA nA IB Input Bias Current RH27E RH27C ±40 ±80 ±50 ±80 ±80 ±125 ±100 ±200 ±200 ±400 nA nA Input Resistance Common Mode RH27E RH27C 3 (Typ) 2 (Typ) 3 (Typ) 2 (Typ) 3 (Typ) 2 (Typ) 3 (Typ) 2 (Typ) 3 (Typ) 2 (Typ) GΩ GΩ Input Voltage Range 4 ±11 ±11 ±11 ±11 ±11 V CMRR Common Mode Rejection Ratio VCM = ±11V (RH27E) VCM = ±11V (RH27C) 114 100 114 100 110 105 100 dB dB PSRR Power Supply Rejection Ratio VS = ±4V to ±18V (RH27E) VS = ±4V to ±18V (RH27C) 100 100 dB dB AVOL Large-Signal Voltage Gain RL ≥ 2kΩ, VO = ±10V (RH27E) RL ≥ 2kΩ, VO = ±10V (RH27C) 1000 700 1000 700 1000 700 900 700 800 400 V/mV V/mV VOUT Maximum Output Voltage Swing RL ≥ 2kΩ (RH27E) RL ≥ 600Ω (RH27E) RL ≥ 2kΩ (RH27C) RL ≥ 600Ω (RH27C) ±12 ±10 ±11.5 ±10 ±12 ±10 ±11.5 ±10 ±12 ±10 ±11.5 ±10 ±12 ±10 ±11.5 ±10 ±12 ±10 ±11.5 ±10 V V V V ZO Open-Loop Output Resistance VO = 0, IO = 0 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) Ω PD Power Dissipation RH27E RH27C 140 170 140 170 140 170 140 170 140 170 mW mW 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) Note 6: See test circuit for current noise measurement on OP-27/OP-37 data sheet. Note 7: The average input offset drift performance is within the specifications unnulled or when nulled with a pot having a range 8kΩ to 20kΩ. Note 8: The RH27’s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±0.7V , the input current should be limited to 25mA. Note 9: VS = ±15V , VCM = 0V unless otherwise noted. Note 10: TA = 25°C, VS = ±15V , VCM = 0V , unless otherwise noted. Note 11: RH27AEW is marked and processed as RH27EW . Orders will be delivered through box stock screening at 25°C, –55°C to 125°C to the VOS specification shown on Table 1. Note 1: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power . Note 2: Long-term input offset voltage stability refers to the averaged trend line of offset voltage vs time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5µV . Refer to the typical performance curve. Note 3: Sample tested to an L TPD of 15 on every lot. Contact factory for 100% testing of 10Hz voltage density noise. Note 4: Parameter is guaranteed by design, characterization, or correlation to other tested parameters. Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz tester on OP-27/OP-37 data sheet. (Postirradiation) (Note 10) Device is characterized at the TID levels below. Device is production tested at 100kRad(si).

Rev. F For more information www.analog.com TYPICAL PERFORMANCE CHARACTERISTICS Positive Slew Rate Negative Slew Rate TOTAL DOSE KRAD (Si) POSITIVE SLEW RATE (V/µs) RH27 G01 100 1000 VS = 15V RL = 2k TOTAL DOSE KRAD (Si) NEGATIVE SLEW RATE (V/µs) RH27 G02 100 1000 VS = 15V RL = 2k TOTAL DOSE BIAS CIRCUIT 10k 15V –15V +10k –1µF –1µF

Rev. FFor more information www.analog.com TYPICAL PERFORMANCE CHARACTERISTICS Open-Loop Gain Input Bias Current TOTAL DOSE KRAD (Si) 140 150 170 100 RH27 G04 130 120 10 1000 110 100 160 OPEN-LOOP GAIN (dB) VS = ±15V RL = 2k VOUT = ±10V TOTAL DOSE KRAD (Si) 200 250 350 100 RH27 G05 150 100 10 1000 300 INPUT BIAS CURRENT (nA) VS = ±15V VCM = 0V Input Offset Voltage TOTAL DOSE KRAD (Si) 150 100 RH27 G03 –50 –100 10 1000 –150 –200 100 INPUT OFFSET VOLTAGE (µV) VS = ±15V VCM = 0V Input Offset Current Power Supply Rejection Ratio TOTAL DOSE KRAD (Si) INPUT OFFSET CURRENT (nA) RH27 G07 –25 –50 10 100 1000 VS = ±15V VCM = 0V TOTAL DOSE KRAD (Si) 110 120 140 100 RH27 G08 100 10 1000 130POWER SUPPLY REJECTION RATIO (dB) VS = ±4V TO ±18V Common Mode Rejection Ratio TOTAL DOSE KRAD (Si) 140 150 170 100 RH27 G06 130 120 10 1000 110 100 160COMMON MODE REJECTION RATIO (dB) VS = ±15V VCM = ±11V Information furnished by Analog Devices is believed to be accurate and reliable. However , no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

REVISION HISTORY

REV DATE DESCRIPTION PAGE NUMBER E 07/23 Updated art title in the Electrical Characteristics section and updated the document to ADI format 1–6 F 07/24 Updated Table 2: Electrical Test Requirements 6

Rev. F For more information www.analog.com  ANALOG DEVICES, INC. 1993-2024 www.analog.com TABLE 2: ELECTRICAL TEST REQUIREMENTS PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn- in in that lot shall be used to determine the percent for the lot. Analog Devices reserves the right to test to tighter limits than those given. MIL-PRF-38535 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements 1*, 2, 3, 4, 5, 6, 7 Group A Test Requirements 1, 2, 3, 4, 5, 6, 7 Group C End Point Electrical Parameters 1 Group D End Point Electrical Parameters 1 Group E End Point Electrical Parameters 1 *PDA applies to subgroup 1. See PDA Test Notes.