RH1078M

RH1078M AD | Alldatasheet

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Rev. IFor more information www.analog.comDocument Feedback PACKAGE/ORDER INFORMATION

DESCRIPTION

Micropower, Dual, Single Supply Precision Op Amp All registered trademarks and trademarks are the property of their respective owners. 0.5V Below Negative Supply Voltage ABSOLUTE MAXIMUM RATINGS BURN-IN CIRCUIT TOTAL DOSE BIAS CIRCUIT TOP VIEW OUT A –IN A +IN A OUT B –IN B +IN B J8 PACKAGE 8-LEAD CERAMIC DIP OBSOLETE PACKAGE For Reference Only TOP VIEW OUT BOUT A –IN B–IN A +IN B+IN A H PACKAGE 8-LEAD TO-5 METAL CAN TOP VIEW W PACKAGE 10-LEAD CERPAC NC +IN B –IN B OUT B OUT A NC +IN A –IN A The RH1078M is a micropower dual op amp in the stan- dard 8-pin configuration. This device is optimized for single supply operation at 5V. Specifications for ±15V are also provided. The wafer lots are processed to Analog Devices’ in-house Class S flow to yield circuits usable in stringent military applications. 50k 100/uni03A9 50k 20V –20V 10k 10k 15V –15V (Each Amplifier) Note: For ordering information contact Analog Devices.

Rev. I For more information www.analog.com TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = 5V, VCM = 0.1V, VOUT = 1.4V unless otherwise specified. Device is characterized at the TID levels below. Device is production tested at 100kRad(si). SYMBOL PARAMETER CONDITIONS NOTES TA = 25°C SUB- GROUP –55°C ≤ TA ≤ 125°C SUB- GROUP UNITSMIN TYP MAX MIN TYP MAX VOS Input Offset Voltage 120 4 370 2, 3 µV ∆VOS ∆Temp Average Tempco of Offset Voltage 0.5 µV/°C ∆VOS ∆Time Long-Term VOS Stability 0.5 µV/Month IOS Input Offset Current 0.8 1 1.5 2, 3 nA IB Input Bias Current 15 1 18 2, 3 nA en Input Noise Voltage 0.1Hz to 10Hz 1 0.5 µVP-P Input Noise Voltage Density fO = 10Hz fO = 1kHz nV/√Hz nV/√Hz in Input Noise Current 0.1Hz to 10Hz 1 2.6 pAP-P Input Noise Current Density fO = 10Hz fO = 1kHz 0.07 0.025 pA/√Hz pA/√Hz RIN Input Resistance Differential 2 600 MΩ Common Mode 2 5 GΩ Input Voltage Range 2 3.5 3.20 0.05 2, 3 2, 3 V V CMRR Common Mode Rejection Ratio VCM = 0V to 3.5V VCM = 0.05V to 3.2V 94 1 2, 3 dB dB PSRR Power Supply Rejection Ratio VS = 2.3V to 12V VS = 3.1V to 12V 100 1 2, 3 dB dB AVOL Large-Signal Voltage Gain VO = 0.03V to 4V, No Load VO = 0.03V to 3.5V, RL = 50k VO = 0.05V to 4V, No Load VO = 0.05V to 3.5V, RL = 50k 150 120 2, 3 2, 3 V/mV V/mV V/mV V/mV VOUT Output Voltage Swing Output Low, No Load Output Low, 2k to GND Output Low, ISINK = 100µA Output High, No Load Output High, 2k to GND 4.2 3.5 130 3.9 3.0 170 5, 6 5, 6 5, 6 5, 6 mV mV mV V V SR Slew Rate AV = 1, VS = ±2.5V 0.04 4 V/µs GBW Gain-Bandwidth Product fO ≤ 20kHz 200 kHz IS Supply Current per Amplifier 75 1 95 2, 3 µA Channel Separation ∆VIN = 3V, RL = 10k 130 dB Minimum Supply Voltage 3 2.3 V

Rev. IFor more information www.analog.com TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = ±15V unless otherwise specified. Device is characterized at the TID levels below. Device is production tested at 100kRad(si). Note 1: All noise parameters are for VS = ±2.5V, VO = 0V. Note 2: This parameter is guaranteed by design, characterization or correlation to other tested parameters. SYMBOL PARAMETER CONDITIONS NOTES TA = 25°C SUB- GROUP –55°C ≤ TA ≤ 125°C SUB- GROUP UNITSMIN TYP MAX MIN TYP MAX VOS Input Offset Voltage 350 4 600 2, 3 µV ∆VOS ∆Temp Average Tempco of Offset Voltage 0.6 µV/°C IOS Input Offset Current 0.8 1 1.5 2, 3 nA IB Input Bias Current 15 18 2, 3 nA Input Voltage Range 13.5 –15.0 V V CMRR Common Mode Rejection Ratio VCM = 13.5V, –15V VCM = 13V, –14.9V 97 1 2, 3 dB dB PSRR Power Supply Rejection Ratio VS = 5V, 0V to ±18V 100 1 94 2, 3 dB AVOL Large-Signal Voltage Gain VO = ±10V, RL = 50k VO = ±10V, RL = 2k VO = ±10V, RL = 5k 1000 300 150 2, 3 V/mV V/mV V/mV VOUT Output Voltage Swing RL = 50k RL = 2k RL = 5k ±13 ±11 ±11 5, 6 V V V SR Slew Rate 0.06 4 V/µs IS Supply Current per Amplifier 100 1 125 2, 3 µA Note 3: Power supply rejection ratio is measured at the minimum supply voltage. The op amps actually work at 1.8V supply but with a typical offset skew of –300µV.

Rev. I For more information www.analog.com TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = 5V, 0V, VCM = 0.1V, VOUT = 1.4V, TA = 25°C, unless otherwise specified. Device is characterized at the TID levels below. Device is production tested at 100kRad(si). SYMBOL PARAMETER CONDITIONS 10KRAD(Si) 25KRAD(Si) 50KRAD(Si) 75KRAD(Si) 100KRAD(Si) UNITSMIN MAX MIN MAX MIN MAX MIN MAX MIN MAX VOS Input Offset Voltage 120 175 250 500 µV IOS Input Offset Current 2 8 13 18 nA IB Input Bias Current 20 40 80 100 nA Input Voltage Range 3.5 3.5 3.5 3.5 V CMRR Common Mode Rejection Ratio VCM = 0V to 3.5V 91 89 87 85 dB PSRR Power Supply Rejection Ratio VS = 2.3V to 12V 100 100 98 88 dB AVOL Large-Signal Voltage Gain VO = 0.03V to 4V, No Load VO = 0.03V to 3.5V, RL = 50k 150 120 150 100 V/mV V/mV VOUT Output Voltage Swing Output Low, No Load Output Low, 2k to GND Output Low, ISINK = 100µA Output High, No Load Output High, 2k to GND 4.2 3.5 130 4.2 3.5 140 4.2 3.5 150 4.2 3.5 160 mV mV mV V V IS Supply Current per Amplifier 75 75 75 75 µA

Rev. IFor more information www.analog.com TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V unless otherwise specified. Device is characterized at the TID levels below. Device is production tested at 100kRad(si). SYMBOL PARAMETER CONDITIONS 10KRAD(Si) 25KRAD(Si) 50KRAD(Si) 75KRAD(Si) 100KRAD(Si) UNITSMIN MAX MIN MAX MIN MAX MIN MAX MIN MAX VOS Input Offset Voltage 350 500 650 800 1000 µV IOS Input Offset Current 2 8 13 18 23 nA IB Input Bias Current 20 40 80 100 120 nA Input Voltage Range 13.5 –15.0 13.5 –15.0 13.5 –15.0 13.5 –15.0 13.5 –15.0 V V CMRR Common Mode Rejection Ratio VCM = 13.5V, –15V 94 92 90 88 86 dB PSRR Power Supply Rejection Ratio VS = 5V, 0V to ±18V 100 100 98 88 78 dB AVOL Large-Signal Voltage Gain VO = 10V, RL = 50k VO = 10V, RL = 2k 1000 300 700 200 400 120 150 V/mV V/mV VOUT Output Voltage Swing RL = 50k RL = 2k ±13 ±11 ±13 ±11 ±13 ±11 ±13 ±11 ±13 ±10 V V IS Supply Current per Amplifier 100 100 100 100 100 µA

Rev. I For more information www.analog.com TABLE 2: ELECTRICAL TEST REQUIREMENTS TYPICAL APPLICATIONS Input Offset Voltage MIL-PRF-38535 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements 1*, 2, 3, 4, 5, 6 Group A Test Requirements 1, 2, 3, 4, 5, 6 Group C End Point Electrical Parameters 1, 2, 3 Group D End Point Electrical Parameters 1, 2, 3 Group E End Point Electrical Parameters 1 *PDA Applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Analog Devices, Inc. reserves the right to test to tighter limits than those given. TOTAL DOSE-KRADs (Si) INPUT OFFSET VOLTAGE (µV) 500 1000 10 100 1000 1078M • G1 –500 –250 250 750 –750 –1000 TOTAL DOSE-KRADs (Si) INPUT OFFSET CURRENT (nA) 10 100 1000 1078M • G2 –10 –15 –20 TOTAL DOSE-KRADs (Si) –80INPUT BIAS CURRENT (nA) –40 10 100 1000 1078M • G3 –120 –100 –60 –20 –140 –160 Input Offset Current Input Bias Current Common Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain TOTAL DOSE-KRADs (Si) 110COMMON MODE REJECTION RATIO (dB) 120 130 10 100 1000 1078M • G4 100 TOTAL DOSE-KRADs (Si) 100POWER SUPPLY REJECTION RATIO (dB) 120 140 10 100 1000 1078M • G5 110 130 TOTAL DOSE-KRADs (Si) 110LARGE-SIGNAL VOLTAGE GAIN (dB) 130 150 10 100 1000 1078M • G6 100 120 140 VS = ±15V VO = ±10V RL = 2k VS = 5V, 0V VO = 0.03V TO 3.5V RL = 50k

Rev. IFor more information www.analog.com Information furnished by Analog Devices is believed to be accurate and reliable. However , no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Output Voltage Swing Low, 2k to GND Output Voltage Swing Low, ISINK = 100mA Slew Rate TYPICAL APPLICATIONS TOTAL DOSE-KRADs (Si) 0.08SLEW RATE (V/µs) 0.12 0.16 10 100 1000 1078M • G7 0.04 0.06 0.10 0.14 0.02 VS = ±15V VS = 5V, 0V TOTAL DOSE-KRADs (Si) 200GAIN-BANDWIDTH PRODUCT (kHz) 300 400 10 100 1000 1078M • G8 100 150 250 350 VS = ±15V TOTAL DOSE-KRADs (Si) 10Hz NOISE DENSITY (nV/√Hz) 120 160 10 100 1000 1078M • G9 100 140 VS = ±15V Gain-Bandwidth Product 10Hz Noise Density Positive Output Voltage Swing Negative Output Voltage Swing Output Voltage Swing Low, No Load TOTAL DOSE-KRADs (Si) POSITIVE OUTPUT VOLTAGE SWING (V) 10 100 1000 1078M • G10 VS = ±15V RL = 50k RL = 2k TOTAL DOSE-KRADs (Si) NEGATIVE OUTPUT VOLTAGE SWING (V) 10 100 1000 1078M • G11 –12 –10 –14 –16 VS = ±15V RL = 50k RL = 2k TOTAL DOSE-KRADs (Si) OUTPUT VOLTAGE SWING (mV) 10 100 1000 1078M • G12 VS = 5V, 0V TOTAL DOSE-KRADs (Si) 0.8 OUTPUT VOLTAGE SWING (mV) 1.2 1.6 10 100 1000 1078M • G13 0.4 0.6 1.0 1.4 0.2 VS = 5V, 0V TOTAL DOSE-KRADs (Si) OUTPUT VOLTAGE SWING (mV) 120 160 10 100 1000 1078M • G14 100 140 VS = 5V, 0V

Rev. I  ANALOG DEVICES, INC. 1994-2023 www.analog.com Rev. I Output Voltage Swing High Supply Current TYPICAL APPLICATIONS TOTAL DOSE-KRADs (Si) 3.8 OUTPUT VOLTAGE SWING (V) 4.2 4.6 10 100 1000 1078M • G15 3.4 3.6 4.0 4.4 3.2 3.0 VS = 5V, 0V NO LOAD 2k TO GND TOTAL DOSE-KRADs (Si) SUPPLY CURRENT PER AMPLIFIER (µA) 10 100 1000 1078M • G16 VS = 5V, 0V VS = ±15V

REVISION HISTORY

REV DATE DESCRIPTION PAGE NUMBER F 05/10 Added J8 and W Packages 1 G 03/19 Obsoleting J8 package and updating document to ADI format All Pages H 07/23 Updated art title in the Electrical Characteristics section 2–5 I 07/24 Updated Table 2: Electrical Test Requirements 6 (Revision history begins at Rev F)