RH1028M

RH1028M AD | Alldatasheet

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Rev. F For more information www.analog.com burn-in circuit Ultralow Noise Precision High Speed Op Amps

Description

The RH1028(gain of –1 stable)/RH1128(gain of +1 stable) achieve a new standard of excellence in noise performance with 0.9nV/√Hz 1kHz noise, 1.0nV/√Hz 10Hz noise. This ultralow noise is combined with excellent high speed speci- fications (gain-bandwidth product is 75MHz for RH1028, 20MHz for RH1128), distortion-free output, and true preci- sion parameters (0.25µV/°C drift, 20µV offset voltage, 25 million voltage gain). Although the RH1028/RH1128 input stage operates at nearly 1mA of collector current to achieve low voltage noise, input bias current is only 50nA. The RH1028/RH1128’s voltage noise is less than the noise of a 50Ω resistor . Therefore, even in very low source impedance transducer or audio amplifier applications, the RH1028/RH1128’s contribution to total system noise will be negligible. All registered trademarks and trademarks are the property of their respective owners. Absolute MAxiMuM rAtings (Note 1) Storage Temperature Range

pAcKAge inForMAtion

–16V RH1028 BI 200˜ 10k tAble 1: electricAl chArActeristics (Preirradiation) VS = ±15V , VCM = 0V , unless otherwise noted. SYMBOL PARAMETER CONDTIONS NOTES TA = 25°C SUB- GROUP –55°C ≤ TA ≤ 125°C SUB- GROUP UNITSMIN TYP MAX MIN TYP MAX VOS Input Offset Voltage 2 20 80 1 45 180 2, 3 µV Long-Term Input Offset Voltage Stability 3 0.3 µV/MO Average Input Offset Voltage Drift 8 0.25 1.0 µV/°C I OS Input Offset Current V CM = 0V 18 150 1 30 200 2, 3 nA IB Input Bias Current V CM = 0V ±50 ±400 1 ±100 ±600 2, 3 nA en Input Noise Voltage Density f O = 10Hz fO = 1000Hz, 100% Tested 5 1.0 0.9 2.5 1.6 nV/√Hz nV/√Hz TOP VIEW W PACKAGE 10-LEAD CERPAC NC OVERCOMP OUT VOS TRIM NC +IN –IN V OS TRIM ∆VOS ∆Time ∆VOS ∆Temp

Rev. F For more information www.analog.com tAble 1: electricAl chArActeristics (Preirradiation) VS = ±15V , VCM = 0V , unless otherwise noted. SYMBOL PARAMETER CONDTIONS NOTES TA = 25°C SUB- GROUP –55°C ≤ TA ≤ 125°C SUB- GROUP UNITSMIN TYP MAX MIN TYP MAX In Input Noise Current Density fO = 10Hz fO = 1000Hz, 100% Tested 4, 6 4.7 1.0 3.6 pA/√Hz pA/√Hz Input Resistance Common Mode Differential Mode 300 MΩ kΩ Input Capacitance 5 pF Input Voltage Range ±11.0 ±12.2 ±10.3 ±11.7 V CMRR Common Mode Rejection Ratio V CM = ±11V VCM = ±10.3V 110 126 1 100 120 2, 3 dB PSRR Power Supply Rejection Ratio VS = ±4V to ±18V VS = ±4.5V to ±16V 110 132 1 104 130 2, 3 dB AVOL Large-Scale Voltage Gain R L ≥ 2k, VO = ±10V RL ≥ 1k, VO = ±10V RL ≥ 600Ω, VO = ±10V 5.0 3.5 2.0 4 2.0 1.5 5, 6 V/µV V/µV V/µV V OUT Maximum Output Voltage Swing R L ≥ 2k RL ≥ 600Ω ±12.0 ±10.5 ±13.0 ±12.2 4 ±10.3 ±11.6 5, 6 V V SR Slew Rate A VCL = –1 (RH1028) AVCL = –1 (RH1128) 11.0 4.5

4 V/µs

V/µs GWB Gain Bandwidth Product f O = 20kHz (RH1028) fO = 200kHz (RH1128) MHz MHz Z O Open-Loop Output Impedance V O = 0, IO = 0 80 Ω IS Supply Current 7.6 10.5 1 9 13 2, 3 mA

Rev. FFor more information www.analog.com Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power . In addition, at T A = 25°C, offset voltage is measured with the chip heated to approximately 55°C to account for the chip temperature rise when the device is fully warmed up. Note 3: Long-term input offset voltage stability refers to the average trend line of Offset Voltage vs Time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in V OS during the first 30 days are typically 2.5µV . Note 4: This parameter is tested on a sample basis only. tAble 1A: electricAl chArActeristics (Postirradiation) VS = ±15V , VCM = 0V , TA = 25°C, unless otherwise noted. SYMBOL PARAMETER CONDTIONS NOTES 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) UNITSMIN MAX MIN MAX MIN MAX MIN MAX MIN MAX VOS Input Offset Voltage 2 100 120 140 160 180 µV IOS Input Offset Current 200 200 200 300 500 nA IB Input Bias Current ±600 ±700 ±950 ±1100 ±1700 nA SR Slew Rate AVCL = –1 (RH1028) AVCL = –1 (RH1128) 7.5 3.0 7.5 3.0 7.5 3.0 7.5 3.0 7.5 3.0 V/µs V/µs Input Voltage Range ±11 ±11 ±11 ±11 ±11 V CMRR Common Mode Rejection Ratio V CM = ±11V 106 106 106 106 106 dB PSRR Power Supply Rejection Ratio VS = ±4V to ±18V 104 104 104 104 104 dB AVOL Large-Signal Voltage Gain R L ≥ 2k, VO = ±10V 2 2 2 2 2 V/µV VOUT Maximum Output Voltage Swing R L ≥ 2k RL ≥ 600Ω ±11.5 ±10 ±11.5 ±10 ±11.5 ±10 ±11.5 ±10 ±11.5 ±10 V V Note 5: 10Hz noise voltage density is sample tested on every lot. Devices 100% tested at 10Hz are available on request. Note 6: Current noise is defined and measured with balanced source resistors. The resultant voltage noise (after subtracting the resistor noise on an RMS basis) is divided by the sum of the two source resistors to obtain current noise. Maximum 10Hz current noise can be inferred from 100% testing at 1kHz. Note 7: Gain-bandwidth product is not tested. It is guaranteed by design and by inference from the slew rate measurement. Note 8: This parameter is not 100% tested. Note 9: The inputs are protected by back-to-back diodes. Current-limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±1.8V , the input current should be limited to 25mA.

Rev. F For more information www.analog.com totAl Dose biAs circuit tAble 2: electricAl test requireMents 10k 10k 15V –15V RH1028 BIAS tYpicAl perForMAnce chArActeristics TOTAL DOSE KRAD (Si) nV/˜ Hz 1.5 2.0 2.5 10 100 1000 RH1028 G01 1.0 0.5 TA = 25°C VS = ±15V 10Hz 1kHz Noise Voltage Density MIL-PRF-38535 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements 1*, 2, 3, 4 Group A Test Requirements 1, 2, 3, 4 1, 2, 3, 4 *PDA Applies to subgroup 1. See PDA Test Notes. Post Group C 25ºC Limits are as follows: SUBGROUP 1 SUBGROUP 2, 3 UNITS VOS ±240 ±340 µV IOS ±350 ±400 nA IB ±760 ±960 nA PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures (including Delta parameters) of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Analog Devices, Inc., reserves the right to test to tighter limits than those given. TOTAL DOSE KRAD (Si) +SLEW RATE (V/µs) 10 100 1000 RH1028 G02 TA = 25°C VS = ±15V VO = ±10V AVCL = –1 TOTAL DOSE KRAD (Si) –SLEW RATE (V/µs) 10 100 1000 RH1028 G03 TA = 25°C VS = ±15V VO = ±10V AVCL = –1 RH1028 Positive Slew Rate RH1028 Negative Slew Rate Group C End Point Electrical Parameters Group D End Point Electrical Parameters Group E End Point Electrical Parameters 1, 2, 3, 4

Rev. F tYpicAl perForMAnce chArActeristics RH1128 Positive Slew Rate RH1128 Negative Slew Rate Input Offset Voltage TOTAL DOSE KRAD (Si) +SLEW RATE (V/µs) 10 100 1000 RH1028 G04 TA = 25°C VS = ±15V VOUT = ±10V AVCL = –1 TOTAL DOSE KRAD (Si) –SLEW RATE (V/µs) 10 100 1000 RH1028 G05 TA = 25°C VS = ±15V VOUT = ±10V AVCL = –1 TOTAL DOSE KRAD (Si) INPUT OFFSET VOL TAGE (µV) 10 100 1000 RH1028 G06 –10 –15 –20 TA = 25°C VS = ±15V VCM = 0V Open-Loop Gain Input Bias Current Common Mode Rejection Ratio TOTAL DOSE KRAD (Si) OPEN-LOOP GAIN (V/µV) 10 100 1000 RH1028 G07 TA = 25°C VS = ±15V RL = 2k VOUT = ±10V TOTAL DOSE KRAD (Si) INPUT BIAS CURRENT (nA) 500 1000 10 100 1000 RH1028 G08 –500 –1000 TA = 25°C VS = ±15V VCM = 0V TOTAL DOSE KRAD (Si) 120CMRR (dB) 130 140 10 100 1000 RH1028 G09 110 115 125 135 105 100 TA = 25°C VS = ±15V VCM = ±11V Input Offset Current Power Supply Rejection Ratio Supply Current TOTAL DOSE KRAD (Si) –500 INPUT OFFSET CURRENT (nA) 100 300 500 10 100 1000 RH1028 G10 –100 –300 TA = 25°C VS = ±15V VCM = 0V TOTAL DOSE KRAD (Si) 130PSRR (dB) 140 150 10 100 1000 RH1028 G11 120 125 135 145 115 110 TA = 25°C VS = ±4V TO ±18V TOTAL DOSE KRAD (Si) IS (mA) 100010010 RH1028 G12 TA = 25°C VS = ±15V VOUT = 0V Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or other. For more information www.analog.comwise under any patent or patent rights of Analog Devices.

Rev. F

revision historY

REV DATE DESCRIPTION PAGE NUMBER E 04/15 Updated postirradiation 20/500/100/200k Rad Input Bias Current Specification 2 (Revision history begins at Rev E) Updated Table 2: Electrical Test Requirements07/24 F 4 www.analog.com  ANALOG DEVICES, INC. 2024