RH1014M

RH1014M AD | Alldatasheet

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Technical content

Rev. IFor more information www.analog.comDocument Feedback BURN-IN CIRCUIT ABSOLUTE MAXIMUM RATINGSDESCRIPTION Quad Precision Operational Amplifier The RH1014M is the first precision quad operational amplifier which directly upgrades designs in the indus - try standard 8-pin DIP LM124/L M148/OP-11/5156 pin configuration. Low offset voltage (300µV max), low drift (≤2.5µV/°C), low offset current (≤1.5nA), and high gain (1.2 million min) combine to make the RH1014M four truly precision amplifiers in one package. The wafer lots are processed to Analog Devices’ in-house Class S flow to yield circuits usable in stringent military applications.

PACKAGE INFORMATION

All registered trademarks and trademarks are the property of their respective owners. TOP VIEW J PACKAGE 14-LEAD CERAMIC DIP OUT A –IN A +IN A +IN B –IN B OUT B OUT D –IN D +IN D +IN C –IN C OUT C OBSOLETE PACKAGE For Reference Only TOP VIEW OUT A –IN A +IN A +IN B –IN B OUT B OUT D –IN D +IN D +IN C –IN C OUT C W PACKAGE 14-LEAD FLATPAK GLASS SEALED RH1014M 20V –20V 50k 100/uni03A9 50k RH1014M BI

Rev. I For more information www.analog.com SYMBOL PARAMETER CONDITIONS NOTES TA = 25°C SUB- GROUP –55°C ≤ TA ≤ 125°C SUB- GROUP UNITSMIN TYP MAX MIN TYP MAX VOS Input Offset Voltage 300 1 550 2,3 µV 2 450 1 750 3 µV VCM = 0.1V 2 750 2 µV ∆VOS ∆Temp Average Tempco of Offset Voltage 1 2.5 µV/°C ∆VOS ∆Time Long Term VOS Stability 0.5 µV/Mo IOS Input Offset Current 10 1 20 2,3 nA 2 10 1 20 2,3 nA IB Input Bias Current 30 1 45 2,3 nA 2 50 1 120 2,3 nA en Input Noise Voltage 0.1Hz to 10Hz 0.55 µVP-P Input Noise Voltage Density fO = 10Hz 24 nV/√Hz fO = 1000Hz 22 nV/√Hz in Input Noise Current Density fO = 10Hz 0.07 pA/√Hz RIN Input Resistance Differential 1 70 MΩ Common Mode 4 GΩ AVOL Large-Signal Voltage Gain VO = ±10V, RL ≥ 2k 1.2 4 0.25 5,6 V/µV VO = ±10V, RL ≥ 600Ω 0.5 4 V/µV VO = 5mV to 4V, RL = 500Ω 2 1 V/µV Input Voltage Range 1 13.5 V 1 –15.0 V 1,2 3.5 V 1,2 0 V CMRR Common-Mode Rejection Ratio VCM = 13.5V, –15V 97 1 dB VCM = 13V, –14.9V 94 2,3 dB PSRR Power Supply Rejection Ratio VS = ±2V to ±18V 100 1 97 2,3 dB Channel Separation VO = ±10V, RL = 2k 120 1 dB VOUT Output Voltage Swing RL ≥ 2k ±12.5 4 ±11.5 5,6 V Output Low, No Load 2 25 4 mV Output Low, 600Ω to GND 2 10 4 18 5,6 mV Output Low, ISINK = 1mA 2 350 4 mV Output High, No Load 2 4.0 4 V Output High, 600Ω to GND 2 3.4 4 3.1 5,6 V SR Slew Rate 0.2 4 V/µs IS Supply Current Per Amplifier 0.55 1 0.70 2,3 mA 2 0.50 1 0.65 2,3 mA (Preirradiation)TABLE 1: ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, unless otherwise noted.

Rev. IFor more information www.analog.com SYMBOL PARAMETER CONDITIONS NOTES 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) UNITSMIN MAX MIN MAX MIN MAX MIN MAX MIN MAX VOS Input Offset Voltage 450 450 600 750 900 µV 2 600 600 750 900 µV IOS Input Offset Current 10 10 15 20 25 nA 2 10 10 15 20 nA IB Input Bias Current 60 75 100 175 250 nA 2 80 100 125 200 nA Input Voltage Range 1 13.5 13.5 13.5 13.5 13.5 V 2 3.5 3.5 3.5 3.5 V 2 0 0 0 0 V CMRR Common-Mode Rejection Ratio VCM = 13V, – 15V 97 97 94 90 86 dB PSRR Power Supply Rejection Ratio VS = ±10V to ±18V 100 98 94 86 80 dB AVOL Large-Signal Voltage Gain RL ≥ 10k, VO = ±10V 500 200 100 50 25 V/mV VOUT Maximum Output Voltage Swing Output Low, No Load 2 25 30 40 50 mV Output Low, 600Ω to GND 2 10 10 10 10 mV Output Low, ISINK = 1mA 2 0.6 0.8 1.0 1.6 V Output High, No Load 2 4.0 4.0 4.0 4.0 V Output High, 600Ω to GND 2 3.4 3.2 3.0 2.8 V 2 0.50 0.50 0.50 0.50 mA TABLE 1A: ELECTRICAL CHARACTERISTICS(Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. Note 1: Guaranteed by design, characterization, or correlation to other tested parameters. Note 2: Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V, VOUT = 1.4V.

Rev. I For more information www.analog.com TYPICAL PERFORMANCE CHARACTERISTICS TOTAL DOSE BIAS CIRCUIT TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-PRF-38535 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements 1*, 2, 3, 4, 5, 6 Group A Test Requirements 1, 2, 3, 4, 5, 6 Group C End Point Electrical Parameters 1, 2, 3 Group D End Point Electrical Parameters 1, 2, 3 Group E End Point Electrical Parameters 1 * PDA applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Analog Devices, Inc., reserves the right to test to tighter limits than those given. Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) 1,2,3,4,5,6 Group B and D for Class S 1,2,3 End Point Electrical Parameters (Method 5005) * PDA applies to subgroup 1. See PDA Test Notes. 15V –15V 10k RH1014M TDBC 10k TOTAL DOSE KRAD (Si) SUPPLY CURRENT (mA) 0.8 0.6 0.4 0.2 10 100 1000 RH1014M G01 VS = ±15V RL = 10k Supply Current (Per Amplifier) Negative Slew RatePositive Slew Rate TOTAL DOSE KRAD (Si) NEGATIVE SLEW RATE (V/µs) 0.8 0.6 0.4 0.2 10 100 1000 RH1014M G03 VS = ±15V RL = 10k TOTAL DOSE KRAD (Si) POSITIVE SLEW RATE (V/µs) 0.8 0.6 0.4 0.2 10 100 1000 RH1014M G02 VS = ±15V RL = 10k

Rev. IFor more information www.analog.com Information furnished by Analog Devices is believed to be accurate and reliable. However , no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. TYPICAL PERFORMANCE CHARACTERISTICS Power Supply Rejection Ratio TOTAL DOSE KRAD (Si) POWER SUPPLY REJECTION RATIO (dB) 140 130 120 110 100 10 100 1000 RH1014M G09 VS = ±10V TO ±18V TOTAL DOSE KRAD (Si) INPUT NOISE VOLTAGE DENSITY (nV/√Hz) 100 10 100 1000 RH1014M G10 VS = ±15V fO = 10Hz Input Noise Voltage Density TOTAL DOSE KRAD (Si) GAIN BANDWIDTH PRODUCT (kHz) 1000 900 800 700 600 500 400 300 200 100 10 100 1000 RH1014M G11 VS = ±5V RL = 10k Gain Bandwidth Product Open-Loop Gain TOTAL DOSE KRAD (Si) OPEN-LOOP GAIN (dB) 150 140 130 120 110 100 10 100 1000 RH1014M G07 VS = ±15V RL = 10k VOUT = ±10V TOTAL DOSE KRAD (Si) INPUT OFFSET VOLTAGE (µV) 300 200 100 –100 –200 –300 10 100 1000 RH1014M G04 VS = ±15V VCM = 0V Input Offset Voltage Input Offset Current TOTAL DOSE KRAD (Si) INPUT OFFSET CURRENT (nA) 10 100 1000 RH1014M G06 VS = ±15V VCM = 0V Input Bias Current TOTAL DOSE KRAD (Si) INPUT BIAS CURRENT (nA) 10 100 1000 RH1014M G05 VS = ±15V VCM = 0V TOTAL DOSE KRAD (Si) COMMON-MODE REJECTION RATIO (dB) 150 140 130 120 110 100 10 100 1000 RH1014M G08 VS = ±15V –15V ≤ VCM ≤ 13.5V Common-Mode Rejection Ratio

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REVISION HISTORY

REV DATE DESCRIPTION PAGE NUMBER H 03/19 Obsoleting J package and updating to ADI format All Pages I 08/24 Updated Table 2: Electrical Test Requirements 4 (Revision history begins at Rev H)