RH1013M

RH1013M

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• Manufacturer or author: Analog Devices, Inc.
• PDF pages: 10

Technical content

Rev. IFor more information www.analog.comDocument Feedback PACKAGE/ORDER INFORMATION BURN-IN CIRCUIT ABSOLUTE MAXIMUM RATINGSDESCRIPTION Dual Precision Operational Amplifier The RH1013M is the first precision dual operational amplifier which directly upgrades designs in the industry standard 8-pin DIP L M158/MC1558/OP-221 pin con - figuration. Low offset voltage ( 300µV max), low drift (≤2.5µV/°C), low offset current ( ≤1.5nA), and high gain (1.2 million min) combine to make the RH1013M two truly precision amplifiers in one package. The wafer lots are processed to Analog Devices’ in-house Class S flow to yield circuits usable in stringent military applications. TOTAL DOSE BIAS CIRCUIT Input Voltage ... Equal to Positive Supply Voltage .. 5V Below Negative Supply Voltage All registered trademarks and trademarks are the property of their respective owners. TOP VIEW OUT B OUT A –IN A +IN A V– (CASE) H PACKAGE 8-LEAD TO-5 METAL CAN +IN B –IN B TOP VIEW OUT A –IN A +IN A OUT B –IN B +IN B J8 PACKAGE 8-LEAD CERAMIC DIP OBSOLETE PACKAGE For Reference Only TOP VIEW W PACKAGE 10-LEAD CERPAC OUT A –IN A +IN A NC OUT B –IN B +IN B NC RH1013M 20V –20V 50k 100/uni03A9 50k RH1013M BI 15V –15V 10k RH1013M TDBC 10k

Rev. I For more information www.analog.com SYMBOL PARAMETER CONDITIONS NOTES TA = 25°C SUB- GROUP –55°C ≤ TA ≤ 125°C SUB- GROUP UNITSMIN TYP MAX MIN TYP MAX VOS Input Offset Voltage 300 1 550 2,3 µV 2 450 1 750 3 µV VCM = 0.1V 750 2 µV ∆VOS ∆Temp Average Tempco of Offset Voltage 1 2.5 µV/°C ∆VOS ∆Time Long Term VOS Stability 0.5 µV/Mo IOS Input Offset Current 10 1 20 2,3 nA 2 10 1 20 2,3 nA IB Input Bias Current 30 1 45 2,3 nA 2 50 1 120 2,3 nA en Input Noise Voltage 0.1Hz to 10Hz 0.55 µVP-P Input Noise Voltage Density fO = 10Hz 24 nV/√Hz fO = 1000Hz 22 nV/√Hz in Input Noise Current Density fO = 10Hz 0.07 pA/√Hz RIN Input Resistance Differential 1 70 MΩ Common Mode 4 GΩ AVOL Large-Signal Voltage Gain VO = ±10V, RL ≥ 2k 1.2 4 0.25 5,6 V/µV VO = ±10V, RL ≥ 600Ω 0.5 4 V/µV VO = 5mV to 4V, RL = 500Ω 2 1 V/µV Input Voltage Range 1 13.5 V 1 –15.0 V 1,2 3.5 V 1,2 0 V CMRR Common-Mode Rejection Ratio VCM = 13.5V, –15V 97 1 dB VCM = 13V, –14.9V 94 2,3 dB PSRR Power Supply Rejection Ratio VS = ±2V to ±18V 100 1 97 2,3 dB Channel Separation VO = ±10V, RL = 2k 120 1 dB VOUT Output Voltage Swing RL ≥ 2k ±12.5 4 ±11.5 5,6 V Output Low, No Load 2 25 4 mV Output Low, 600Ω to GND 2 10 4 18 5,6 mV Output Low, ISINK = 1mA 2 350 4 mV Output High, No Load 2 4.0 4 V Output High, 600Ω to GND 2 3.4 4 3.1 5,6 V SR Slew Rate 0.2 4 V/µs IS Supply Current Per Amplifier 0.55 1 0.70 2,3 mA 2 0.50 1 0.65 2,3 mA (Preirradiation)TABLE 1: ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, unless otherwise noted. Device is characterized at the TID levels below. Device is production tested at 100kRad(si).

Rev. IFor more information www.analog.com SYMBOL PARAMETER CONDITIONS NOTES 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) UNITSMIN MAX MIN MAX MIN MAX MIN MAX MIN MAX VOS Input Offset Voltage 450 450 600 750 900 µV 2 600 600 750 900 µV IOS Input Offset Current 10 10 15 20 25 nA 2 10 10 15 20 nA IB Input Bias Current 60 75 100 175 250 nA 2 80 100 125 200 nA 2 3.5 3.5 3.5 3.5 V 2 0 0 0 0 V CMRR Common-Mode Rejection Ratio VCM = 13V, – 15V 97 97 94 90 86 dB PSRR Power Supply Rejection Ratio VS = ±10V to ±18V 100 98 94 86 80 dB AVOL Large-Signal Voltage Gain RL ≥ 10k, VO = ±10V 500 200 100 50 25 V/mV VOUT Maximum Output Voltage Swing Output Low, No Load 2 25 30 40 50 mV Output Low, 600Ω to GND 2 10 10 10 10 mV Output Low, ISINK = 1mA 2 0.6 0.8 1.0 1.6 V Output High, No Load 2 4.0 4.0 4.0 4.0 V Output High, 600Ω to GND 2 3.4 3.2 3.0 2.8 V 2 0.50 0.50 0.50 0.50 mA TABLE 1A: ELECTRICAL CHARACTERISTICS(Postirradiation) (Note 3) TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-PRF-38535 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements 1*, 2, 3, 4, 5, 6 Group A Test Requirements 1, 2, 3, 4, 5, 6 Group C End Point Electrical Parameters 1, 2, 3 Group D End Point Electrical Parameters 1, 2, 3 Group E End Point Electrical Parameters 1 * PDA applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Analog Devices, Inc. reserves the right to test to tighter limits than those given. VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. Note 1: Guaranteed by design, characterization, or correlation to other tested parameters. Note 2: Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V, VOUT = 1.4V. Note 3: Device is characterized at 10Krad, 20Krad, 50Krad, 100Krad, and 200Krad and is production tested at 100Krad only.

Rev. I For more information www.analog.com TYPICAL PERFORMANCE CHARACTERISTICS TOTAL DOSE KRAD (Si) SUPPLY CURRENT (mA) 0.8 0.6 0.4 0.2 10 100 1000 RH1013M G01 VS = ±15V RL = 10k Supply Current (Per Amplifier) Negative Slew RatePositive Slew Rate TOTAL DOSE KRAD (Si) NEGATIVE SLEW RATE (V/µs) 0.8 0.6 0.4 0.2 10 100 1000 RH1013M G03 VS = ±15V RL = 10k TOTAL DOSE KRAD (Si) POSITIVE SLEW RATE (V/µs) 0.8 0.6 0.4 0.2 10 100 1000 RH1013M G02 VS = ±15V RL = 10k TOTAL DOSE KRAD (Si) OPEN-LOOP GAIN (dB) 150 140 130 120 110 100 10 100 1000 RH1013M G07 VS = ±15V RL = 10k VOUT = ±10V Open-Loop Gain TOTAL DOSE KRAD (Si) INPUT OFFSET CURRENT (nA) 10 100 1000 RH1013M G06 VS = ±15V VCM = 0V Input Offset Current TOTAL DOSE KRAD (Si) INPUT BIAS CURRENT (nA) 10 100 1000 RH1013M G05 VS = ±15V VCM = 0V Input Bias Current TOTAL DOSE KRAD (Si) INPUT OFFSET VOLTAGE (µV) 300 200 100 –100 –200 –300 10 100 1000 RH1013M G04 VS = ±15V VCM = 0V Input Offset Voltage

Rev. IFor more information www.analog.com TYPICAL PERFORMANCE CHARACTERISTICS TOTAL DOSE KRAD (Si) COMMON-MODE REJECTION RATIO (dB) 150 140 130 120 110 100 10 100 1000 RH1013M G08 VS = ±15V –15V ≤ VCM ≤ 13.5V Common-Mode Rejection Ratio TOTAL DOSE KRAD (Si) POWER SUPPLY REJECTION RATIO (dB) 140 130 120 110 100 10 100 1000 RH1013M G09 VS = ±10V TO ±18V Power Supply Rejection Ratio TOTAL DOSE KRAD (Si) GAIN BANDWIDTH PRODUCT (kHz) 1000 900 800 700 600 500 400 300 200 100 10 100 1000 RH1013M G11 VS = ±5V RL = 10k TOTAL DOSE KRAD (Si) INPUT NOISE VOLTAGE DENSITY (nV/√Hz) 100 10 100 1000 RH1013M G10 VS = ±15V fO = 10Hz Input Noise Voltage Density Gain Bandwidth Product

Rev. I For more information www.analog.com PACKAGE OUTLINE DRAWINGS H Package 8-Lead TO-5 Metal Can (.200 Inch PCD) (Reference L TC DWG # 05-08-1320)

Rev. IFor more information www.analog.com .050 (1.270) MAX .016 – .021** (0.406 – 0.533) .010 – .045* (0.254 – 1.143) SEATING PLANE .040 (1.016) MAX .165 – .185 (4.191 – 4.699) GAUGE PLANE REFERENCE PLANE .500 – .750 (12.700 – 19.050) .305 – .335 (7.747 – 8.509) .335 – .370 (8.509 – 9.398) DIA .200 (5.080) TYP .027 – .045 (0.686 – 1.143) .028 – .034 (0.711 – 0.864) .110 – .160 (2.794 – 4.064) INSULATING STANDOFF 45° H8(TO-5) 0.200 PCD 0204 LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE AND THE SEATING PLANE FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS .016 – .024 (0.406 – 0.610) PIN 1 8-Lead CERDIP (Narrow .300 Inch, Hermetic) (Reference L TC DWG # 05-08-1110) PACKAGE OUTLINE DRAWINGS

Rev. I For more information www.analog.com J8 0801 .014 – .026 (0.360 – 0.660) .200 (5.080) MAX .015 – .060 (0.381 – 1.524) .125 3.175 MIN.100 (2.54) BSC .300 BSC (7.62 BSC) .008 – .018 .005 (0.127) MIN .405 (10.287) MAX .220 – .310 (5.588 – 7.874) 1 2 3 4 8 7 6 5 .025 (0.635) RAD TYP .045 – .068 (1.143 – 1.650) FULL LEAD OPTION .023 – .045 (0.584 – 1.143) HALF LEAD OPTION CORNER LEADS OPTION (4 PLCS) .045 – .065 (1.143 – 1.651) W Package 10-Lead Flatpak Glass Sealed (Hermetic) (Reference L TC DWG # 05-08-1130) PACKAGE OUTLINE DRAWINGS

Rev. IFor more information www.analog.com Information furnished by Analog Devices is believed to be accurate and reliable. However , no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. DEVICE SYMBOL CONDITIONS 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 80KRAD (Si) 100KRAD (Si) 200KRAD (Si) PACKAGE OPTIONSMIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS RH07 VOS IOS 2.8 150 200 250 300 µV nA J8, H RH27C VOS IOS 100 130 180 280 120 400 180 µV nA H, W RH37C VOS IOS 100 130 180 280 120 400 180 µV nA H, W RH101A VOS IOS mV nA H, W RH108A VOS IOS 0.5 0.2 0.5 0.2 0.5 0.2 1.0 0.2 mV nA H, W RH117 VREF 3V ≤ (VIN – VOUT) ≤ 40V 10mA ≤ IOUT ≤ IMAX, P ≤ PMAX RH118 VOS SR VS = ±15V, AV = 1 10 mV V/µs H, W RH119 VOS IOS 100 150 300 500 mV nA H, J, W RH129 VZ ∆VZ/∆TEMP RH129A RH129B RH129C 6.7 7.2 6.7 7.2 6.7 7.2 6.7 7.2 6.7 7.2 V ppm/°C ppm/°C ppm/°C H RH137 VREF |VIN – VOUT| ≤ 5V, IOUT = 10mA 10mA ≤ IOUT ≤ IMAX, P ≤ PMAX –1.225 –1.2 –1.275 –1.3 –1.225 –1.2 –1.275 –1.3 –1.225 –1.2 –1.275 –1.3 –1.225 –1.2 –1.275 –1.3 –1.22 –1.2 –1.23 –1.3 V V K, H RH1009 VZ ∆VZ/∆IZ 2.495 2.505 2.495 2.505 2.495 2.505 2.495 2.505 2.495 2.505 V mV H RH1011 VOS IOS 1.5 1.5 1.5 1.5 mV nA H, J8, W RH1013 VOS IOS 450 450 600 750 900 µV nA H, J8, W RH1014 VOS IOS 450 450 600 750 900 µV nA J, W RH1021-5 VOUT TCVOUT RH1021CM-5 RH1021BM-5, DM-5 RH1021BM-5 RH1021CM-5, DM-5 4.9975 4.95 5.0025 4.995 4.945 5.005 5.055 4.993 4.942 5.007 5.058 4.9925 4.94 5.008 5.06 4.99 4.935 5.01 5.065 V V ppm/°C ppm/°C H RH1021-7 VOUT TCVOUT RH1021BM-7 RH1021DM-7 6.95 7.05 6.95 7.05 6.95 7.05 6.94 7.06 6.93 7.07 V ppm/°C ppm/°C H RH1021-10 VOUT TCVOUT RH1021CM-10 RH1021BM-10, DM-10 RH1021BM-10 RH1021CM-10, DM-10 9.995 9.95 10.005 10.05 9.99 9.945 10.01 10.055 9.987 9.942 10.013 10.06 9.985 9.98 10.015 10.06 9.98 9.935 10.02 10.065 V V ppm/°C ppm/°C H RH1056A VOS IOS 180 ±10 180 ±50 250 ±150 450 ±250 450 ±350 µV pA H, W RH1078 VOS 350 500 650 75k 800 1000 µV H, J8, W IOS 2 18 13 75k 18 23 nA J, W RH1086 VREF Dropout V IOUT = 10mA 10mA ≤ IOUT ≤ IFULL LOAD 1.5V ≤ (VIN – VOUT) ≤ 15V ∆VREF = 1%, IOUT = 1.5A (K) ∆VREF = 1%, IOUT = 0.5A (H) 1.258 1.271 1.5 1.257 1.269 1.51 1.253 1.265 1.52 1.247 1.260 1.55 1.241 1.253 1.575 V V V H, K RAD HARD This table provides example specifications for our Rad Hard products. For complete Rad Hard data sheets, contact Analog Devices, Inc.

Rev. I For more information www.analog.com  ANALOG DEVICES, INC. 2019–2025 www.analog.com

REVISION HISTORY

REV DATE DESCRIPTION PAGE NUMBER F 02/19 Obsoleting J8 packaging and updating document to ADI format All Pages G 06/23 Updated art title in the Electrical Characteristics section 2, 3 H 09/24 Updated Table 2: Electrical Test Requirements 3 I 11/25 (Revision history begins at Rev F)