RFZ44N

IRFZ44NPBF_15 IRF | Alldatasheet

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HEXFET® Power MOSFET /G48/G57/G47/G50/G49/G47/G49/G48 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.5 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 55V RDS(on) = 17.5mΩ ID = 49A S D G TO-220AB Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. /G108Advanced Process Technology /G108Ultra Low On-Resistance /G108Dynamic dv/dt Rating /G108175°C Operating Temperature /G108Fast Switching /G108Fully Avalanche Rated /G108Lead-Free

Description

Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V 49 ID @ TC = 100°C Continuous Drain Current, V GS @ 10V 35 A IDM Pulsed Drain Current /G129 160 PD @TC = 25°C Power Dissipation 94 W Linear Derating Factor 0.63 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current/G129 25 A EAR Repetitive Avalanche Energy/G129 9.4 mJ dv/dt Peak Diode Recovery dv/dt /G131 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) PD - 94787B

/G73/G82/G70/G90/G52/G52/G78/G80/G98/G70 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)/G129 ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 25A, VGS = 0V /G132 trr Reverse Recovery Time ––– 63 95 ns T J = 25°C, IF = 25A Qrr Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs /G132 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 160 /G65 /G130 Starting TJ = 25°C, L = 0.48mH RG = 25Ω, IAS = 25A. (See Figure 12) /G129/G32Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) /G78/G111/G116/G101/G115/G58 /G131ISD ≤/G3225A/G44/G32di/d/G116/G32≤/G32230A/µs, VDD/G32≤/G32V(BR)DSS, TJ ≤ 175°C /G132 Pulse width ≤ 400µs; duty cycle ≤ 2%. /G133 This is a typical value at device destruction and represents operation outside rated limits. /G134 This is a calculated value limited to T J = 175°C . Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 m Ω VGS = 10V, ID = 25A/G32/G132 VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = VGS, ID = 250µA gfs Forward Transconductance 19 ––– ––– S V DS = 25V, ID = 25A/G132 ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 V DS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 63 I D = 25A Qgs Gate-to-Source Charge ––– ––– 14 nC V DS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 V GS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– V DD = 28V tr Rise Time ––– 60 ––– I D = 25A td(off) Turn-Off Delay Time ––– 44 ––– R G = 12Ω tf Fall Time ––– 45 ––– V GS = 10V, See Fig. 10 /G132 Between lead,––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1470 ––– V GS = 0V Coss Output Capacitance ––– 360 ––– V DS = 25V Crss Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy /G130––– 530 /G133150/G134mJ I AS = 25A, L = 0.47mH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns /G52/G46/G53 /G55/G46/G53 IDSS Drain-to-Source Leakage Current

/G73/G82/G70/G90/G52/G52/G78/G80/G98/G70 www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 175 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 4 5 6 7 8 9 10 11 V = 25V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 175 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 49A

/G73/G82/G70/G90/G52/G52/G78/G80/G98/G70 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 500 1000 1500 2000 2500 V , Drain-to-Source Voltage (V) C, Capacitance (pF) DS V C C C 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd Ciss Coss Crss 0 10 20 30 40 50 60 70 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS I =D 25A V = 11VDS V = 27VDS V = 44VDS 0.1 100 1000 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 175 CJ ° 1 10 100 VDS , Drain-toSource Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec

/G73/G82/G70/G90/G52/G52/G78/G80/G98/G70 www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 25 50 75 100 125 150 175 T , Case Temperature ( C) I , Drain Current (A) D VDS 90% 10% VGS td(on) tr td(off) tf /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32≤ 1 /G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32≤ 0.1 % /G82/G68 /G86/G71/G83 /G82/G71 /G68/G46/G85/G46/G84/G46 /G86/G71/G83 -/G86/G68/G68 /G70/G105/G103/G32/G49/G48/G97/G46/G32/G32/G83/G119/G105/G116/G99/G104/G105/G110/G103/G32/G84/G105/G109/G101/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116 /G70/G105/G103/G32/G49/G48/G98/G46/G32/G32/G83/G119/G105/G116/G99/G104/G105/G110/G103/G32/G84/G105/G109/G101/G32/G87/G97/G118/G101/G102/G111/G114/G109/G115 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

/G73/G82/G70/G90/G52/G52/G78/G80/G98/G70 6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors /G86/G71/G83 /G70/G105/G103/G32/G49/G51/G98/G46/G32/G32/G71/G97/G116/G101/G32/G67/G104/G97/G114/G103/G101/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116/G70/G105/G103/G32/G49/G51/G97/G46/G32/G32/G66/G97/G115/G105/G99/G32/G71/G97/G116/G101/G32/G67/G104/G97/G114/G103/G101/G32/G87/G97/G118/G101/G102/G111/G114/G109 /G70/G105/G103/G32/G49/G50/G98/G46/G32/G32/G85/G110/G99/G108/G97/G109/G112/G101/G100/G32/G73/G110/G100/G117/G99/G116/G105/G118/G101/G32/G87/G97/G118/G101/G102/G111/G114/G109/G115 /G70/G105/G103/G32/G49/G50/G97/G46/G32/G32/G85/G110/G99/G108/G97/G109/G112/G101/G100/G32/G73/G110/G100/G117/G99/G116/G105/G118/G101/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116 tp V(BR)DSS IAS /G70/G105/G103/G32/G49/G50/G99/G46/G32/G32/G77/G97/G120/G105/G109/G117/G109/G32/G65/G118/G97/G108/G97/G110/G99/G104/G101/G32/G69/G110/G101/G114/G103/G121 /G86/G115/G46/G32/G68/G114/G97/G105/G110/G32/G67/G117/G114/G114/G101/G110/G116 RG IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20V 25 50 75 100 125 150 175 120 180 240 300 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 10A 18A 25A

/G73/G82/G70/G90/G52/G52/G78/G80/G98/G70 www.irf.com 7 /G80/G101/G97/G107/G32/G68/G105/G111/G100/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G100/G118/G47/G100/G116/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period /G131 /G132/G130 /G82/G71 /G86/G68/G68

• /G100/G118/G47/G100/G116/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G82/G71
• /G73/G83/G68/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/G34/G68/G34
• /G68/G46/G85/G46/G84/G46/G32/G45/G32/G68/G101/G118/G105/G99/G101/G32/G85/G110/G100/G101/G114/G32/G84/G101/G115/G116 /G68/G46/G85/G46/G84/G42 /G67/G105/G114/G99/G117/G105/G116/G32/G76/G97/G121/G111/G117/G116/G32/G67/G111/G110/G115/G105/G100/G101/G114/G97/G116/G105/G111/G110/G115
• /G32/G76/G111/G119/G32/G83/G116/G114/G97/G121/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32 • /G71/G114/G111/G117/G110/G100/G32/G80/G108/G97/G110/G101 /G32/G32 • /G76/G111/G119/G32/G76/G101/G97/G107/G97/G103/G101/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32/G32/G32/G32/G32/G67/G117/G114/G114/G101/G110/G116/G32/G84/G114/G97/G110/G115/G102/G111/G114/G109/G101/G114 /G129 /G42/G32/G32/G82/G101/G118/G101/G114/G115/G101/G32/G80/G111/G108/G97/G114/G105/G116/G121/G32/G111/G102/G32/G68/G46/G85/G46/G84/G32/G102/G111/G114/G32/G80/G45/G67/G104/G97/G110/G110/G101/G108 /G86/G71/G83 /G91/G32/G32/G32/G32/G93 /G91/G32/G32/G32/G32/G93 /G42/G42/G42/G32/G86/G71/G83/G32/G61/G32/G53/G46/G48/G86/G32/G102/G111/G114/G32/G76/G111/G103/G105/G99/G32/G76/G101/G118/G101/G108/G32/G97/G110/G100/G32/G51/G86/G32/G68/G114/G105/G118/G101/G32/G68/G101/G118/G105/G99/G101/G115 /G91/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G93/G32/G42/G42/G42 /G70/G105/G103/G32/G49/G52/G46/G32For N-channel/G32HEXFET® power MOSFETs

/G73/G82/G70/G90/G52/G52/G78/G80/G98/G70 8 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information .09/2010 /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101/G32/G32/G40/G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G104/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G104/G101/G115/G41/G41 /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 INTERNATIONAL PART NUMBER RECTIFIER LO T C O DE AS S E MBL Y LO G O YEAR 0 = 2000 DATE CODE W EEK 19 LINE C L OT CODE 1789 EXAMPLE: THIS IS AN IRF1010 Note: "P" in as sembly line position i ndicates "L ead - F ree" IN THE A SSEM BLY LI N E " C " AS S EMB LED ON WW 19, 2000 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/