RFT1P06E INTERSIL | Alldatasheet
Document overview
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- PDF pages: 8
Technical content
Features
- 1.4A, 60V
- r DS(ON) = 0.285Ω
- 2kV ESD Protected
- Temperature Compensating PSPICE ® Model
- SPICE Thermal Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- 150 oC Operating Temperature
- Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging SOT-223
Ordering Information
NOTE: RFT1P06E is available only in tape and reel. D G S DRAIN SOURCE GATE DRAIN (FLANGE) Data Sheet August 1999
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified RFT1P06E UNITS Drain Current 1.4 Figure 5 A 1.1 9.09 W mW/ oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTA = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V (Figure 11) -60 - - V Gate to Source Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 10) -2 - -4 V Zero Gate Voltage Drain Current I DSS VDS = -60V, VGS = 0V - - -1 µA VDS = -60V, VGS = 0V, TA = 150oC - - -50 µA Gate to Source Leakage Current I GSS VGS =±10V - - ±100 nA Drain to Source On Resistance r DS(ON) ID = 1.4A, VGS = -10V (Figure 9) - 0.215 0.285 W Turn-On Time t ON VDD = -30V, ID ≅ 1.4A, R L = 21.4Ω , VGS = -10V, R GS = 18Ω - - 51 ns Turn-On Delay Time t d(ON) -9- n s Rise Time t r -2 5-n s Turn-Off Delay Time t d(OFF) -3 5-n s Fall Time t f -2 8-n s Turn-Off Time t OFF - - 95 ns Total Gate Charge Q g(TOT) VGS = 0V to -20V VDD = -30V, ID ≅ 1.4A, R L = 21.4Ω IG(REF) = 1.0mA (Figure 13) -3 1 3 7 n C Gate Charge at 10V Q g(-10) VGS = 0V to -10V - 17 20 nC Threshold Gate Charge Q g(TH) VGS = 0V to -2V - 1.1 1.3 nC Input Capacitance C ISS VDS =-25V, VGS = 0V, f = 1MHz (Figure 12) - 600 - pF Output Capacitance C OSS - 175 - pF Reverse Transfer Capacitance C RSS -4 0-p F Thermal Resistance Junction to Ambient R θJA Pad Area = 0.122in2 (Note 2) - - 110 oC/W Pad Area = 0.071in2 (Note 2) - - 119 oC/W - - 137 oC/WPad Area = 0.026in2 (Note 2) NOTE: 2. 110oC/W measured using FR-4 board with 0.122in2 footprint at 1000 seconds (See Technical Brief 337). Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD ISD = -1.4A - - -1.25 V Reverse Recovery Time t rr ISD = -1.4A, dISD /dt = -100A/µs- - 7 1 n s Reverse Recovered Charge Q RR ISD = -1.4A, dISD /dt = -100A/µs - - 192 nC RFT1P06E
SUBCKT RFT1P06E 2 1 3; rev 10/16/97 CA 12 8 7.42e-10 CB 15 14 8.04e-10 CIN 6 8 5.5e-10 DBODY 5 7DBODYMOD DBREAK 7 11 DBREAKMOD DPLCAP 10 6DPLCAPMOD DESD1 91 9 DESD1MOD DESD2 91 7DESD2MOD EBREAK 5 11 17 18 -69.1 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTHRES 6 21 19 8 1 EVTEMP 6 20 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 1.73e-9 LSOURCE 3 7 3.9e-10 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 9.52e-2 RGATE 9 20 3.95 RLDRAIN 2 5 10 RLGATE 1 9 17.3 RLSOURCE 3 7 39 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD .144 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*22),9))} .MODEL DBREAKMOD D (RS = 4.66e-1 TRS1 = 1.48e-3 TRS2 = -7.49e-6) .MODEL DPLCAPMOD D (CJO = 2.49e-10 IS = 1e-30 N = 10) .MODEL DESD1MOD D (BV=20.2 TBV1=-1.25e-3 TBV2=5.79e-7 RS=36 NBV=1 IBV=7e6) .MODEL DESD2MOD D (BV=25.4 TBV1=-8.3e-4 TBV2=8.9e-7 NBV=1 IBV=7e6) .MODEL MMEDMOD NMOS (VTO = -3.32 KP =.258 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MSTROMOD NMOS (VTO = -3.824 KP = 4.8 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = -3.0 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBREAKMOD RES (TC1 = 9.48e-4 TC2 = -1.42e-7) .MODEL RDRAINMOD RES (TC1 = 5.4e-3 TC2 = 1.25e-5) .MODEL RSLCMOD RES (TC1 = 1.75e-3 TC2 = 3.9e-6) .MODEL RSOURCEMOD RES (TC1 = 5.4e-3 TC2 = 1.25e-5) .MODEL RVTHRESMOD RES (TC1 = 0 TC2 = 0) .MODEL RVTEMPMOD RES (TC1 = -3.55e-3 TC2 = -3.43e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON =5.1 VOFF= 3.1) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON =3.1 VOFF= 5.1) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.10 VOFF= -2.9) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.9 VOFF= 2.10) .ENDS NOTE: For further discussion of the PSPICE model, consultA New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. GATE RGATE EVTEMP 229 12 13 S1A S1B S2A S2B CA CB EGS EDS CIN MWEAK RDRAIN DBREAK EBREAK DBODY DRAIN RSOURCE SOURCE RBREAK RVTEMP VBAT IT EVTHRES ESG DPLCAP ESLC RSLC1 RSLC2 610 7 3 17 18 MMED MSTRO RVTHRES LSOURCE RLSOURCE LDRAIN RLDRAIN LGATE RLGATE DESD1 DESD2 RFT1P06E
All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 SPICE Thermal Model rev 10/16/97 RFT1P06E CTHERM1 7 6 1.3e-4 CTHERM2 6 5 5.0e-4 CTHERM3 5 4 2.0e-3 CTHERM4 4 3 5.0e-3 CTHERM5 3 2 4.75e-2 CTHERM6 2 1 3.8e-1 RTHERM1 7 6 4.0e-2 RTHERM2 6 5 9.0e-2 RTHERM3 5 4 5.0e-1 RTHERM4 4 3 3.5 RTHERM5 3 2 20 RTHERM6 2 1 75 RTHERM4 RTHERM6 RTHERM5 RTHERM3 RTHERM2 RTHERM1 CTHERM4 CTHERM6 CTHERM5 CTHERM3 CTHERM2 CTHERM1