RFR3410TRLPBF

RFR3410TRLPBF IRF | Alldatasheet

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Symbol Parameter Max. Units VDS Drain-Source Voltage 100 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, V GS @ 10V 31 /G134 ID @ TC = 100°C Continuous Drain Current, V GS @ 10V 22 A IDM Pulsed Drain Current/G129 125 PD @TC = 25°C Maximum Power Dissipation 110 W PD @TA = 25°C Maximum Power Dissipation 3.0 Linear Derating Factor 0. 71 mW°C dv/dt Peak Diode Recovery dv/dt /G131 15 V/ns TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) www.irf.com 1 12/03/04 IRFR3410PbF IRFU3410PbF HEXFET/G174/G32Power MOSFET VDSS RDS(on) max I D 100V 39m Ω 31A/G134 Notes/G32/G129/G32through /G134 are on page 10 D-Pak IRFR3410 I-Pak IRFU3410 /G80/G68/G32/G45/G32/G57/G53/G53/G49/G52/G65 /G108High frequency DC-DC converters /G108Lead-Free Benefits

Applications

/G108Low Gate-to-Drain Charge to Reduce Switching Losses /G108Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) /G108Fully Characterized Avalanche Voltage and Current Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.4 RθJA Junction-to-Ambient (PCB mount)* ––– 40 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance Absolute Maximum Ratings

/G73/G82/G70/G82/G47/G85/G51/G52/G49/G48/G80/G98/G70 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 33 ––– ––– S V DS = 25V, ID = 18A Qg Total Gate Charge ––– 37 56 I D = 18A Qgs Gate-to-Source Charge ––– 10 ––– nC V DS = 50V Qgd Gate-to-Drain ("Miller") Charge ––– 11 ––– V GS = 10V, /G132 td(on) Turn-On Delay Time ––– 12 ––– V DD = 50V tr Rise Time ––– 27 ––– I D = 18A td(off) Turn-Off Delay Time ––– 40 ––– R G = 9.1Ω tf Fall Time ––– 13 ––– V GS = 10V/G32/G132 Ciss Input Capacitance ––– 1690 ––– V GS = 0V Coss Output Capacitance ––– 220 ––– V DS = 25V Crss Reverse Transfer Capacitance ––– 26 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1640 ––– V GS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 130 ––– V GS = 0V, VDS = 80V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 250 ––– V GS = 0V, VDS = 0V to 80V /G133 Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy/G130 ––– 140 mJ IAR Avalanche Current/G129 ––– 18 A Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) /G129 ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 18A, VGS = 0V/G32/G132 trr Reverse Recovery Time ––– 84 ––– ns T J = 25°C, IF = 18A Qrr Reverse RecoveryCharge ––– 260 ––– nC di/dt = 100A/µs /G32/G132 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 31/G134 125 /G65 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V V GS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, I D = 1mA /G132 RDS(on) Static Drain-to-Source On-Resistance ––– 34 39 m Ω VGS = 10V, ID = 18A/G32/G132 VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = VGS, ID = 250µA ––– ––– 20 µA VDS = 100V, VGS = 0V ––– ––– 250 V DS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20VIGSS IDSS Drain-to-Source Leakage Current

/G73/G82/G70/G82/G47/G85/G51/G52/G49/G48/G80/G98/G70 www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0. 1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current (A) 4.5V 20µs PULSE WIDTH Tj = 25°C 0. 1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 ID, Drain-to-Source Current (A) 4.5V 20µs PULSE WIDTH Tj = 175°C /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G86/G71/G83 /G32/G84/G79/G80/G32/G32/G32/G32/G32/G32/G32/G32/G49/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G56/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G55/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G54/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G48/G86 /G66/G79/G84/G84/G79/G77/G32/G52/G46/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G86/G71/G83 /G32/G84/G79/G80/G32/G32/G32/G32/G32/G32/G32/G32/G49/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G56/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G55/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G54/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G48/G86 /G66/G79/G84/G84/G79/G77/G32/G52/G46/G53/G86 VGS, Gate-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current (Α) TJ = 25°C TJ = 175°C VDS = 50V 20µs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) 0.0 1.0 2.0 3.0 RDS(on) , Drain-to-Source On Resistance (Norm alized) ID = 30A VGS = 10V

/G73/G82/G70/G82/G47/G85/G51/G52/G49/G48/G80/G98/G70 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C, Capacitance (pF) Coss Crss Ciss VGS = 0 V, f = 1 MH Z Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 1 02 03 04 05 06 0 QG Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) VDS= 80V VDS= 50V VDS= 20V ID= 18A VSD, Source-toDrain Voltage (V) 0.1 1.0 10.0 100.0 1000.0 ISD, Reverse Drain Current (A) TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec

/G73/G82/G70/G82/G47/G85/G51/G52/G49/G48/G80/G98/G70 www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32≤ 1 /G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32≤ 0.1 % /G82/G68 /G86/G71/G83 /G82/G71 /G68/G46/G85/G46/G84/G46 /G86/G71/G83 -/G86/G68/G68 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 25 50 75 100 125 150 175 TC , Case Temperature (°C) ID , Drain Current (A) LIMITED BY PACKAG E 1E-006 1E-005 0.0001 0. 001 0. 01 0. 1 t1 , Rectangular Pulse Duration (sec) 0. 001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE )

/G73/G82/G70/G82/G47/G85/G51/G52/G49/G48/G80/G98/G70 6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors /G86/G71/G83 Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current RG IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20VVGS 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) 100 150 200 250 EAS, Single Pulse Avalanche Energy (m J) /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G73/G68 /G32/G84/G79/G80/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G55/G46/G51/G65 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G51/G65 /G66/G79/G84/G84/G79/G77/G32/G32/G32/G32/G49/G56/G65

/G73/G82/G70/G82/G47/G85/G51/G52/G49/G48/G80/G98/G70 www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period Fig 14. For N-Channel HEXFET/G174/G32Power MOSFETs /G42/G32/G86/G71/G83/G32/G61/G32/G53/G86/G32/G102/G111/G114/G32/G76/G111/G103/G105/G99/G32/G76/G101/G118/G101/G108/G32/G68/G101/G118/G105/G99/G101/G115 /G80/G101/G97/G107/G32/G68/G105/G111/G100/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G100/G118/G47/G100/G116/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116 /G131 /G132/G130 /G82/G71 /G86/G68/G68

• /G100/G118/G47/G100/G116/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G82/G71
• /G68/G114/G105/G118/G101/G114/G32/G115/G97/G109/G101/G32/G116/G121/G112/G101/G32/G97/G115/G32/G68/G46/G85/G46/G84/G46
• /G73/G83/G68/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/G34/G68/G34
• /G68/G46/G85/G46/G84/G46/G32/G45/G32/G68/G101/G118/G105/G99/G101/G32/G85/G110/G100/G101/G114/G32/G84/G101/G115/G116 /G68/G46/G85/G46/G84 /G67/G105/G114/G99/G117/G105/G116/G32/G76/G97/G121/G111/G117/G116/G32/G67/G111/G110/G115/G105/G100/G101/G114/G97/G116/G105/G111/G110/G115
• /G32/G76/G111/G119/G32/G83/G116/G114/G97/G121/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32 • /G71/G114/G111/G117/G110/G100/G32/G80/G108/G97/G110/G101 /G32/G32 • /G76/G111/G119/G32/G76/G101/G97/G107/G97/G103/G101/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32/G32/G32/G32/G32/G67/G117/G114/G114/G101/G110/G116/G32/G84/G114/G97/G110/G115/G102/G111/G114/G109/G101/G114 /G129 /G42

/G73/G82/G70/G82/G47/G85/G51/G52/G49/G48/G80/G98/G70 8 www.irf.com /G68/G45/G80/G97/G107/G32/G40/G84/G79/G45/G50/G53/G50/G65/G65/G41/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 /G68/G45/G80/G97/G107/G32/G40/G84/G79/G45/G50/G53/G50/G65/G65/G41/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 12IN THE A SSEM BLY LINE "A " AS S EMBL ED ON WW 16, 1999 EXA M PLE: W ITH A SSEM BLY THIS IS A N IRFR120 LOT CODE 1234 YEAR 9 = 1999 DAT E CODE W EEK 16 PART NUMBER LO G O INTERNATIONAL REC TIFIER A SSEM BLY LO T C O DE 916A IRFU120 YEAR 9 = 1999 DAT E CODE OR P = DE S I GNAT E S L E AD-F R E E PRODUC T (OPTIO NAL) Note: "P" in a s sembly line position indicates "L ead-F ree" 12 34 WE E K 16 A = AS S E MB L Y S I T E CODE PA RT NUMBER IRFU120 LINE A LO G O LO T C O DE A SSEM BLY INTERNATIONA L RECTIFIER

/G73/G82/G70/G82/G47/G85/G51/G52/G49/G48/G80/G98/G70 www.irf.com 9 /G73/G45/G80/G97/G107/G32/G40/G84/G79/G45/G50/G53/G49/G65/G65/G41/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G104/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G104/G101/G115/G41 /G73/G45/G80/G97/G107/G32/G40/G84/G79/G45/G50/G53/G49/G65/G65/G41/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 AS S E MB LY EXA M PLE: W ITH A SSEM BLY THIS IS A N IRFU120 YEAR 9 = 1999 DAT E CODE LINE A WE E K 19IN THE A SSEM BLY LINE "A " A S SEMBLED ON WW 19, 1999 LOT CODE 5678 PART NUMBER IRFU120 INTERNATIONA L LOG O REC TIFIER LO T C O D E 919A Note: "P" in a ssembly line pos ition indicates "L ead-F ree" /G79/G82 56 78 AS S E MB L Y LO T C O D E REC TIFIER LO G O INTERNATIO NA L IRFU120 PA RT NUM BER WE E K 19 DA TE CODE YEAR 9 = 1999 A = AS S E MB L Y S IT E CODE P = DESIG NA TES LEA D-FREE PRODUCT (OPTIONA L)

/G73/G82/G70/G82/G47/G85/G51/G52/G49/G48/G80/G98/G70 10 www.irf.com /G129/G32Repetitive rating; pulse width limited by max. junction temperature. /G131ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C /G78/G111/G116/G101/G115/G58 /G130 /G32Starting TJ = 25°C, L = 0.85mH RG = 25Ω, IAS = 18A. /G132 Pulse width ≤ 300µs; duty cycle ≤ 2%. /G133 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS /G134/G32Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. /G42/G32/G32When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information .12/04 /G68/G45/G80/G97/G107/G32/G40/G84/G79/G45/G50/G53/G50/G65/G65/G41/G32/G84 /G97/G112/G101/G32/G38/G32/G82/G101/G101/G108/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G104/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G104/G101/G115/G41 TR 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION FEED DIRECTION 16.3 ( .641 15.7 ( .619 ) TRR TRL NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. OUTLINE CONFORMS TO EIA-481. 16 mm

13 INCH

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/